Abstract: A method of providing shallow acceptor and donor energy levels to produce higher conductivity semiconductor materials, relies on the coulombic pairing of donor and acceptor elements. One exemplary embodiment is applied to create shallow acceptor levels in the III-V nitride materials via the coulombic pairing of group I elements which, in principle, act as double acceptors occupying metal lattice sites with group IV or group VI elements which act as single donors occupying metal or nitrogen lattice sites, respectively. The resulting pairs act as single acceptors with an energy level much closer to the valence band edge than that of either the first or second level of the group I element acceptors in their unpaired state. This approach, when optimized, can result in creating acceptor levels much shallower than the Mg acceptors currently used to make p-type GaN and its alloys.

Abstract: A slider/stator device for the growth of thin film material, such as mercury cadmium telluride, in which the substrate, thin film and growth solution are kept free from impurities by use of sleeves, made, for example, from sapphire, in order to prevent contamination and adhesion of the growth solution to the slider assembly.