Patents by Inventor Honyong Zhang

Honyong Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for forming a semiconductor
    Patent number: 6924212
    Abstract: A preparing method of a semiconductor, particularly a preparing method of a polycrystal semiconductor film which has a good electrical property is disclosed. In order to obtain a non-crystalline silicon film containing a lot of combination of hydrogen and silicon, a forming process of a non-crystalline silicon film by a low temperature gas phase chemical reaction, a process of a heat annealing to produce a lot of dangling bonds of silicon, so as to draw out hydrogen from said non-crystalline silicon film, and a process of applying a laser irradiation to said non-crystal silicon film having a lot of dangling bond of silicon are conducted.
    Type: Grant
    Filed: June 4, 2003
    Date of Patent: August 2, 2005
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Honyong Zhang, Naoto Kusumoto
  • Method for forming a semiconductor
    Patent number: 6576534
    Abstract: A preparing method of a semiconductor, particularly a preparing method of a polycrystal semiconductor film which has a good electrical property is disclosed. In order to obtain a non-crystalline silicon film containing a lot of combination of hydrogen and silicon, a forming process of a non-crystalline silicon film by a low temperature gas phase chemical reaction, a process of a heat annealing to produce a lot of dangling bonds of silicon, so as to draw out hydrogen from said non-crystalline silicon film, and a process of applying a laser irradiation to said non-crystal silicon film having a lot of dangling bond of silicon are conducted.
    Type: Grant
    Filed: February 10, 1998
    Date of Patent: June 10, 2003
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Honyong Zhang, Naoto Kusumoto
  • Method for forming a semiconductor
    Patent number: 5766344
    Abstract: A preparing method of a semiconductor, particularly a preparing method of a polycrystal semiconductor film which has a good electrical property is disclosed. In order to obtain a non-crystalline silicon film containing a lot of combination of hydrogen and silicon, a forming process of a non-crystalline silicon film by a low temperature gas phase chemical reaction, a process of a heat annealing to produce a lot of dangling bonds of silicon, so as to draw out hydrogen from said non-crystalline silicon film, and a process of applying a laser irradiation to said non-crystal silicon film having a lot of dangling bond of silicon are conducted.
    Type: Grant
    Filed: May 26, 1995
    Date of Patent: June 16, 1998
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Honyong Zhang, Naoto Kusumoto