Abstract: A multilevel one-time programmable memory device includes a plurality of memory cells, wherein each of the plurality of memory cells includes: a first electrode to which a first voltage is applied, a second electrode to which a second voltage is applied and a plurality of fuse lines performing a fusing operation according to a voltage difference between the first electrode and the second electrode. The plurality of fuse lines are connected to each other between the first electrode and the second electrode. In addition, at least one of the first electrode and the second electrode is formed such that the first electrode and the second electrode have different valid line lengths from each other therebetween so that the plurality of fuse lines have different resistances from each other.