Abstract: A semiconductor chip is provided. The semiconductor chip may include a front side including a control chip contact and a first controlled chip contact, a back side including a second controlled chip contact, a backside metallization formed over the back side in contact with the second controlled chip contact, and a stop region extending at least partially along an outer edge of the back side between a contact portion of the backside metallization and the outer edge of the back side. The contact portion is configured to be attached to an electrically conductive structure by a die attach material, a surface of the stop region is recessed with respect to a surface of the contact portion, and/or the surface of the stop region has a lower wettability with respect to the die attach material than the contact portion.

Abstract: An electrical connection structure includes a first metallic lead having a first contact area, a second metallic lead having a second contact area, and a connection region connecting the first and second leads with each other. The connection region includes a trench. The trench includes a planar rectangular horizontal floor surface and vertical walls adjacent to the planar rectangular floor surface.