Abstract: The present disclosure relates to a polishing composition enabling an improved molybdenum removal rate while reducing etching of molybdenum (high Mo RR/Mo SER ratio) and simultaneously enabling a high ratio of molybdenum removal rate to silicon oxide removal rate (Mo:TEOS removal rate selectivity). More particularly, the polishing compositions comprise an abrasive, a molybdenum (Mo) removal rate enhancer, an organic acid, an oxidizer, a corrosion inhibitor, and water, combined in specified amounts to provide a composition with advantageous properties such as high Mo RR/Mo SER ratio and high Mo:TEOS removal rate selectivity, thus providing compositions well suited for polishing a molybdenum surface.

Abstract: The present disclosure relates to chemical mechanical polishing (CMP) compositions for polishing molybdenum surfaces. In particular, the CMP composition includes an abrasive, a molybdenum (Mo) etching inhibitor, an oxidizer, and water, combined in specified amounts to provide a composition with advantageous properties such as high Mo:TEOS removal rate selectivity and/or high Mo:SiN removal rate selectivity.

Abstract: Provided herein are compositions and methods for polishing surfaces comprising cobalt and optionally a low-K material, e.g., in semiconductor device fabrication. Embodiments include a slurry for chemical mechanical polishing a surface comprising cobalt and low-K materials, such as Black Diamond (BD) or SiN, comprising a complexor, an oxidizer, an abrasive, a Co corrosion inhibitor and an ILD suppressor.

Abstract: Provided herein are methods and compositions for chemical mechanical polishing (CMP) of metals. The present methods and compositions involve the use of a corrosion inhibitor having the general formula CmH2m+1—(OCH2CH2)n-L-R in the CMP slurry composition, where m is an integer between 6 and 11, inclusive of end points, and n is an integer greater than or equal to 6, L is a bond, —O—, —S—, —R1—, —S—R1—, or —O—R1—, where R1 is a C1-4 alkylene; and R is an anionic group. The present methods and compositions can be used to achieve a high metal removal rate, while effectively inhibiting metal corrosion during CMP, and are particularly useful for CMP of cobalt (Co).

Abstract: Provided herein are compositions and methods for polishing surfaces comprising cobalt and optionally a low-K material, e.g., in semiconductor device fabrication. Also provided herein are compositions and methods for polishing surfaces comprising a metal and/or silicate material and a low-K material. Embodiments include a slurry for chemical mechanical polishing a surface comprising cobalt and low-K materials, such as Black Diamond (BD) or SiN, comprising a complexor, an oxidizer, an abrasive, a Co corrosion inhibitor and an ILD suppressor. Embodiments also include a slurry for chemical mechanical polishing a surface comprising a metal and/or silicate material such as cobalt, copper, tantalum, and/or TEOS and a low-K material, such as Black Diamond (BD) or SiN, comprising a complexor, an oxidizer, an abrasive, a corrosion inhibitor, and a non-ionic surfactant.

Abstract: Provided herein are compositions and methods for polishing surfaces comprising cobalt and optionally a low-K material, e.g., in semiconductor device fabrication. Embodiments include a slurry for chemical mechanical polishing a surface comprising cobalt and low-K materials, such as Black Diamond (BD) or SiN, comprising a complexor, an oxidizer, an abrasive, a Co corrosion inhibitor and an ILD suppressor.

Abstract: Described herein are polishing compositions containing an abrasive and a buffering material, wherein the pH of the polishing composition is about 6 to about 9, and methods of preparing and using the same.

Abstract: Provided herein are methods and compositions for chemical mechanical polishing (CMP) of a cobalt containing substrate. The present methods and compositions involve the use of a complexor, an oxidizer, an abrasive and a cobalt corrosion inhibitor including an amino acid having at least two acidic moieties. The present methods and compositions can be used to achieve a high cobalt removal rate, while effectively inhibiting corrosion during CMP.

Abstract: Provided herein are methods and compositions for chemical mechanical polishing (CMP) of metals. The present methods and compositions involve the use of a corrosion inhibitor having the general formula CmH2m+1—(OCH2CH2)n-L-R in the CMP slurry composition, where m is an integer between 6 and 11, inclusive of end points, and n is an integer greater than or equal to 6, L is a bond, —O—, —S—, —R1—, —S—R1—, or —O—R1—, where R1 is a C1-4 alkylene; and R is an anionic group. The present methods and compositions can be used to achieve a high metal removal rate, while effectively inhibiting metal corrosion during CMP, and are particularly useful for CMP of cobalt (Co).

Abstract: Described herein are polishing compositions containing an abrasive and a buffering material, wherein the pH of the polishing composition is about 6 to about 9, and methods of preparing and using the same.

Abstract: A method is disclosed for polishing a wafer with a slurry. In the method, the wafer comprises at least one of silicon carbonitride (SiCN) and silicon nitride (SiN), and further comprises one or both of silicon dioxide (SiO2) and poly silicon, and a removal rate of SiCN is greater than a removal rate of poly silicon, and the removal rate of poly silicon is greater than a removal rate of SiO2, and where the slurry comprises up to about 15 wt % of surface-modified colloidal silica particles which have a primary particle size of less than about 35 nm, and the surface-modified colloidal silica particles comprise a plurality of acid moieties or salts thereof.

Abstract: A method is disclosed for polishing a wafer with a slurry. In the method, the wafer comprises at least one of silicon carbonitride (SiCN) and silicon nitride (SiN), and further comprises one or both of silicon dioxide (SiO2) and poly silicon, and a removal rate of SiCN is greater than a removal rate of poly silicon, and the removal rate of poly silicon is greater than a removal rate of SiO2, and where the slurry comprises up to about 15 wt % of surface-modified colloidal silica particles which have a primary particle size of less than about 35 nm, and the surface-modified colloidal silica particles comprise a plurality of acid moieties or salts thereof.

Abstract: The disclosure provides polishing compositions that show a high polishing rate ratio of a silicon nitride (SiN) surface to a silicon oxide surface, and/or of a SiN surface to a polycrystalline silicon (Poly Si) surface. Such compositions comprise, in certain aspects, of colloidal silica, and one or more water soluble polymers, and has a pH of 6 or less, wherein the colloidal silica comprises one or more organic acids bound to its surface, and the water soluble polymer is a polyoxyalkylene hydrocarbyl ether which hydrocarbyl moiety has 12 or more carbon atoms.

Abstract: A device implantable within a human body, and a method for producing the device, are provided. The device comprises a biocompatible coating on at least a portion of an outer surface of a substrate. The biocompatible coating comprises tropoelastin. A biocompatible coating is formed in situ on the outer surface of the substrate.