Abstract: Virtual dipole signal amplification for in-body devices, such as implantable and ingestible devices, is provided. Aspects of the in-body deployable antennas of the invention include antennas configured to go from a first configuration to a second configuration following placement in a living body, e.g., via ingestion or implantation. Embodiments of the in-body devices are configured to emit a detectable signal upon contact with a target physiological site. Also provided are methods of making and using the devices of the invention.

Abstract: Generally, the process includes depositing a barrier layer and seed layer on a feature formed in a dielectric layer, performing a grafting process, initiating a copper layer and then filing the feature by use of a bulk copper fill process. Copper features formed according to aspects described herein have desirable adhesion properties to a barrier and seed layers formed on a semiconductor substrate and demonstrate enhanced electromigration and stress migration results in the fabricated devices formed on the substrate.

Abstract: A drug delivery device is provided. The device is configured to be automatically activated by a wireless signal sent from a sensor or from another implantable device. Embodiments of the device include a drug reservoir, a delivery mechanism, an energy source, and a processor which activates the delivery mechanism upon receiving the wireless automatically generated signal. The device can operate with a battery, or with an energy source that can harvest ambient energy (e.g. from a defibrillator pulse). Also provided are systems and kits having components thereof, and methods of using the subject devices.

Abstract: A method and apparatus for adjusting an electric field of an electrochemical processing cell are provided. In one embodiment, a capacitive element is disposed in the processing solution. The strength, shape, or direction of the electric field in the processing solution may be modulated by charging and discharging the capacitive element in a controlled manner. Because the electric field is modulated with out passing a current from the capacitive element to the processing solution, electrochemical reactions do not occur on the interface of the capacitive element and the processing solution, thus, reduces complications caused by unwanted electrochemical reactions.

Abstract: Generally, the process includes depositing a barrier layer and seed layer on a feature formed in a dielectric layer, performing a grafting process, initiating a copper layer and then filing the feature by use of a bulk copper fill process. Copper features formed according to aspects described herein have desirable adhesion properties to a barrier and seed layers formed on a semiconductor substrate and demonstrate enhanced electromigration and stress migration results in the fabricated devices formed on the substrate.

Abstract: A method is disclosed for depositing a copper seed layer onto a substrate surface, generally onto a barrier layer that is an alloy of a group VIII metal and a refractory metal. In one aspect, the alloy consists of at least 50% ruthenium and the balance a copper diffusion barrier material. A copper layer is electroplated on the alloy directly. In one aspect, the surface of the barrier layer is conditioned prior to plating to improve adhesion and reduce the critical current density for plating on the barrier layer. The conditioning may include cathodic pre-treatment or a plasma pre-treatment in a hydrogen or hydrogen/helium mixture. In one aspect, the substrate surface is immersed in an acidic plating bath and a nucleation waveform is applied to form a seed layer. In another aspect, the substrate is immersed in a neutral or alkaline copper solution that includes complexed copper ions.

Abstract: Generally, the process includes depositing a barrier layer on a feature formed in a dielectric layer, decorating the barrier layer with a metal, performing a grafting process, initiating a copper layer and then filing the feature by use of a bulk copper fill process. Copper features formed according to aspects described herein have desirable adhesion properties to a barrier layer formed on a semiconductor substrate and demonstrate enhanced electromigration and stress migration results in the fabricated devices formed on the substrate.

Abstract: A method and apparatus for plating a metal onto a substrate. One embodiment of the invention provides an apparatus for electrochemically plating a substrate. The apparatus comprises a fluid basin configured to retain a plating solution therein, an anode assembly disposed in the fluid basin, a substrate support member configured to support the substrate and contact the substrate electrically, and an encased auxiliary electrode assembly disposed in the fluid basin. The encased auxiliary electrode assembly generally comprises an auxiliary electrode disposed in a protective tube.

Abstract: A method and apparatus for plating a metal onto a substrate. One embodiment of the present invention provides an apparatus for electroplating a substrate. The apparatus comprises a fluid basin, an anode disposed near a bottom of the fluid basin, a restrictor disposed above the anode, and a substrate support member configured to move the substrate within the fluid basin among different elevations relative to the restrictor. Plating profiles on the substrate may be adjusted by changing the elevation of the substrate during plating.

Abstract: A method for immersing a substrate into a plating solution. In one embodiment, the method includes applying a first waveform to the substrate as the substrate is being immersed into the plating solution, stopping the application of the first waveform to the substrate as soon as the substrate is fully immersed inside the plating solution, and applying a second waveform to the substrate prior to the substrate being situated into a plating position.

Abstract: Embodiments of the invention provide a method for conditioning contacts of an electrochemical metal plating system. The method includes deplating the contacts by supplying a reversed biased energy and monitoring electrical measurements of the plating system in real-time such that the endpoint of a deplating process can be determined. In different embodiments, the method includes the use of a constant current or voltage, variable current or voltage, or combinations thereof for conditioning the contacts.

Abstract: A method for electrolytically repairing a copper seed layer. The method includes positioning the seed layer in fluid communication with a low conductivity seed layer repair solution, wherein the low conductivity seed layer repair solution includes a copper concentration of less than about 20 g/l, a pH of less than about 4, a chlorine ion concentration of between about 20 ppm and about 100 ppm, and an additive organic surfactant configured to suppress a copper deposition rate in the concentration range of 200 ppm to 2000 ppm. The method further includes applying a seed layer repair bias configured to generate a current density of less than about 5 mA/cm2 across the seed layer and cleaning the repaired seed layer in pure water containing less than 1 ppm chloride ions.

Abstract: A method for controlling the chemical composition of an electroplating bath solution used to plate a plurality of substrates by providing the electroplating bath solution to a small-volume plating cell configured to minimize additive breakdown, and discarding the electroplating bath after a predetermined bath lifetime. The method includes predetermining a lifetime of an electroplating bath solution having a desired chemical composition, combining a plurality of electroplating bath solution components thereby forming the electroplating bath solution having the desired chemical composition, filling a small-volume plating cell with the electroplating bath solution, plating a plurality of substrates in the electroplating bath solution until the bath lifetime is reached; and discarding the electroplating bath solution after the bath lifetime is reached.