Abstract: A semiconductor memory device includes a substrate including a cell area and a peripheral area defined around the cell area, a peripheral gate on the peripheral area and including a peripheral gate conductive film, peripheral wiring lines on the peripheral gate, peripheral wiring capping films respectively in contact with the peripheral wiring lines, wherein each peripheral wiring capping film includes upper and lower surfaces, and a peripheral wiring isolation pattern isolating adjacent peripheral wiring lines, and contacting a sidewall of the peripheral wiring lines, wherein the lower surface of each peripheral wiring capping film faces the substrate and contacts an upper surface of the peripheral wiring extension line, wherein a height from an upper surface of the substrate to the upper surface of each peripheral wiring extension line is smaller than a height from the upper surface of the substrate to an upper surface of the peripheral wiring isolation pattern.

Abstract: An embodiment fender cover for mounting of an autonomous driving sensor includes a first cover part fastenable to a fender for a vehicle in which a mounting area is machined and configured to guide a first sensor to be mounted in a protruded state in the mounting area, a second cover part coupled to the first cover part and configured to guide a mounting position of the first sensor, and a third cover part coupled to the second cover part and fastened to the mounting area, disposed to support the second cover part and a second sensor mounted in the mounting area, and including a mounting guide hole with a shape corresponding to a shape of the second sensor.

Abstract: The present disclosure relates to a pre-5th-Generation (5G) or 5G communication system to be provided for supporting higher data rates Beyond 4th-Generation (4G) communication system such as Long Term Evolution (LTE). A handover method for a terminal according to one embodiment of the present disclosure may include: receiving, from a source cell, a message including information on one or more target cells for performing a fast handover; and performing a fast handover by reusing a radio bearer based on the received information.

Abstract: The present application relates to a clothing treatment apparatus comprising: a drum which is provided with a drum body providing a space for storing clothing, a front cover forming the front surface of the drum body, a rear cover forming the rear surface of the drum body, and a rear cover through-hole passing through the rear cover; a fixing panel provided at a position spaced apart from the rear cover; a power transmission unit which is provided with a housing fixed to the fixing panel, an input shaft of which one end is positioned outside the housing and the other end is positioned inside the housing, an output shaft of which one end passes through the fixing panel and is fixed to the rear cover and the other end is positioned inside the housing, and a gear unit positioned inside the housing and transmitting the rotational motion of the input shaft to the output shaft; a motor which is provided with a stator fixed to the fixing panel or the housing and forming a rotating field and a rotor fixed to the one

Abstract: The present invention relates to a composition for smokeless tobacco and orally dissolvable film-type smokeless tobacco comprising same. More specifically, the present invention relates to a composition for orally dissolvable film-type smokeless tobacco, which is capable of improving the intraoral uptake rate, moldability, and taste of nicotine while reducing harmfulness to the human body, orally dissolvable film-type smokeless tobacco comprising same, and a manufacturing method thereof.

Abstract: The present disclosure relates to a pre-5th-Generation (5G) or 5G communication system to be provided for supporting higher data rates Beyond 4th-Generation (4G) communication system such as Long Term Evolution (LTE). A handover method for a terminal according to one embodiment of the present disclosure may include: receiving, from a source cell, a message including information on one or more target cells for performing a fast handover; and performing a fast handover by reusing a radio bearer based on the received information.

Abstract: The present disclosure provides a semiconductor memory device with improved element performance and reliability. The semiconductor memory device includes a substrate, a gate electrode extending in a first direction in the substrate, a plurality of buried contacts on the substrate, and a fence in a trench between adjacent ones of the buried contacts. The fence is on the gate electrode. The fence includes a spacer film on side walls of the trench and extending in a second direction intersecting the first direction, and a filling film in the trench and on the spacer film. An upper surface of the spacer film is lower than an upper surface of the filling film with respect to the substrate.

Abstract: A power management integrated circuit includes a buck converter that includes a first metal oxide semiconductor field effect transistor (MOSFET) having a first conductivity type and a second MOSFET having a second conductivity type. The first MOSFET includes transistor sets that are two-dimensionally arranged. Each transistor set includes source regions, drain regions, and gate electrodes between the source regions and the drain regions. Each source region and each drain region includes an impurity region having the first conductivity type, and each source region further includes segment regions having the second conductivity type. A first source region is spaced apart from a second source region in a first direction, and a number of the segment regions in the first source region is different from a number of the segment regions in the second source region.

Abstract: A die device for molding a plurality of semiconductor chips is provided. The die device includes a lower die including a moving plate that has a plurality of V-groove structures for suctioning a release film coated with a resin, and an upper die which descends to the lower die or ascends from the lower die, thereby closing/opening the dies. The upper die includes at least a plurality of suction vent units for suctioning a substrate on which the semiconductor chips are arranged, and the lower die includes a device for manually adjusting the tension of a spring that supports the moving plate.

Abstract: The present disclosure relates to a pre-5th-Generation (5G) or 5G communication system to be provided for supporting higher data rates Beyond 4th-Generation (4G) communication system such as Long Term Evolution (LTE). A handover method for a terminal according to one embodiment of the present disclosure may include: receiving, from a source cell, a message including information on one or more target cells for performing a fast handover; and performing a fast handover by reusing a radio bearer based on the received information.

Abstract: The present disclosure provides a semiconductor memory device with improved element performance and reliability. The semiconductor memory device comprises a substrate, a gate electrode extending in a first direction in the substrate, a plurality of buried contacts on the substrate, and a fence in a trench between adjacent ones of the buried contacts. The fence is on the gate electrode. The fence includes a spacer film on side walls of the trench and extending in a second direction intersecting the first direction, and a filling film in the trench and on the spacer film. An upper surface of the spacer film is lower than an upper surface of the filling film with respect to the substrate.

Abstract: The present disclosure relates to a non-contact type pile cutting apparatus using a waterjet, particularly to a pile cutting apparatus entering the inside for cutting a pile including: a body that has a pipe form and is put into an inside of the pile; a gripper unit that is provided at an outer side of the body and fixes the body to the pile when the pile cutting apparatus has reached a cutting position of the pile; a waterjet unit that is provided at one side of the body and fixed by the gripper unit, and then sprays an abrasive mixture in which an abrasive and a fluid are mixed, toward the pile in a high pressure; a rotation unit that rotates the waterjet unit around a central axis of the body; a feed line that feeds the abrasive mixture in which the fluid and the abrasive of a set ratio are mixed, to the waterjet unit from the outside; a feed unit that controls a feed pressure of the abrasive mixture fed through the feed line; and a nozzle driving unit that controls a position of the waterjet unit.

Abstract: The present disclosure relates to a stabbing system for installing an offshore jacket structure and an installation method for installing an offshore jacket structure using the same.

Abstract: A compound with enhanced etching resistance, gap-filling properties, and heat resistance includes a repeating unit represented by Formula 1.

Abstract: The present invention relates to a laundry dryer, and the laundry dryer comprises a steam part for supplying steam into a drum, and a water supply part for supplying water to the steam part, wherein the steam part includes: a steam generator; a steam nozzle for supplying steam into the drum; a steam pipe for connecting the steam generator and the steam nozzle; and an accumulator for separating condensate water from the steam flowing in the steam pipe, and thus prevents the condensate water from being generated in the steam pipe or the steam nozzle and falling into the drum.

Abstract: A laundry treating apparatus includes: a cabinet including a rear plate at a rear surface, a drum rotatably disposed inside the cabinet and configured to receive laundry, the drum including a drum rear surface facing the rear plate, and a driver coupled to the rear plate and connected to the drum. The rear plate includes: a driver mounting portion coupled to the driver, and an air flow portion surrounding the driver mounting portion, providing a flow space configured to receive air, and configured to move the air in the flow space toward the drum. The flow space is defined at a front surface of the rear plate, and the driver is coupled to a rear surface of the rear plate.

Abstract: The present disclosure provides a semiconductor memory device with improved element performance and reliability. The semiconductor memory device comprises a substrate, a gate electrode extending in a first direction in the substrate, a plurality of buried contacts on the substrate, and a fence in a trench between adjacent ones of the buried contacts. The fence is on the gate electrode. The fence includes a spacer film on side walls of the trench and extending in a second direction intersecting the first direction, and a filling film in the trench and on the spacer film. An upper surface of the spacer film is lower than an upper surface of the filling film with respect to the substrate.

Abstract: The present disclosure relates to a pre-5th-Generation (5G) or 5G communication system to be provided for supporting higher data rates Beyond 4th-Generation (4G) communication system such as Long Term Evolution (LTE). A handover method for a terminal according to one embodiment of the present disclosure may include: receiving, from a source cell, a message including information on one or more target cells for performing a fast handover; and performing a fast handover by reusing a radio bearer based on the received information.

Abstract: The present disclosure provides a semiconductor memory device capable of improving reliability and performance. The semiconductor memory device comprises a substrate including a cell region and a peripheral region around the cell region, a cell region isolation film which defines the cell region, a bit line structure in the cell region, a first peripheral gate structure on the peripheral region of the substrate, the first peripheral gate structure comprising a first peripheral gate conduction film and a first peripheral capping film on the first peripheral gate conduction film, a peripheral interlayer insulating film around the first peripheral gate structure and an insertion interlayer insulating film on the peripheral interlayer insulating film and the first peripheral gate structure, and including a material different from the peripheral interlayer insulating film. An upper face of the peripheral interlayer insulating film is lower than an upper face of the first peripheral capping film.

Abstract: The present disclosure relates to a pre-5th-Generation (5G) or 5G communication system to be provided for supporting higher data rates Beyond 4th-Generation (4G) communication system such as Long Term Evolution (LTE). A handover method for a terminal according to one embodiment of the present disclosure may include: receiving, from a source cell, a message including information on one or more target cells for performing a fast handover; and performing a fast handover by reusing a radio bearer based on the received information.