Abstract: Disclosed is a processing apparatus for rounding an edge of a lead tab for a secondary battery, comprising: a loading unit on which the lead tab manufactured by the lead tab manufacturing apparatus is loaded and seated; a primary edge processing unit installed at a downstream side of the loading unit; a secondary edge processing unit installed at a downstream side of the primary edge processing unit; an unloading unit installed at a downstream side of the secondary edge processing unit and configured to load the lead tab transferred from the secondary edge processing unit and discharge the loaded lead tab to the outside; and a transfer unit configured to load the lead tab.

Abstract: Provided are a silicon nitride film etching composition, a method of etching a silicon nitride film using the same, and a manufacturing method of a semiconductor device. Specifically, a silicon nitride film may be stably etched with a high selection ratio relative to a silicon oxide film, and when the composition is applied to an etching process at a high temperature and a semiconductor manufacturing process, not only no precipitate occurs but also anomalous growth in which the thickness of the silicon oxide film is rather increased does not occur, thereby minimizing defects and reliability reduction.

Abstract: A display device includes a via insulating layer on a substrate; a first electrode on the via insulating layer; a pixel defining layer including an inclined region on the first electrode and including a first opening exposing a portion of the first electrode, and a flat region at a side of the inclined region and in contact with the via insulating layer; a light emitting layer on the portion of the first electrode exposed by the first opening; organic particles on the flat region of the pixel defining layer; an encapsulation layer covering the pixel defining layer, the light emitting layer, and the organic particles, and including a first layer, a second layer, and a third layer; and a first light blocking layer on the third layer of the encapsulation layer to overlap the flat region of the pixel defining layer and form a second opening.

Abstract: A plasma distribution device for supplying plasma onto an object in a chamber is provided. The device includes a tube for supplying the plasma into the chamber, and a baffle installed under the tube for controlling flow of the plasma supplied from the tube. The baffle includes an upper shower head and a lower shower head, the upper shower head having a center portion for reflecting the plasma supplied from the tube, and a plurality of holes spaced apart from each other around the center portion for uniformly distributing the plasma.