Abstract: A semiconductor device may include a via pattern connected to a conductive pattern on a substrate, the via pattern including a lower via pattern and an upper via pattern stacked on the lower via pattern, and a wiring line connected to the upper via pattern and extending in a second direction. The wiring line may include a same metal as the upper via pattern. A bottom width of the wiring line may be greater than a top width of the wiring line. a widths of an upper face of the lower via pattern may be equal to width of the bottom face of the upper via pattern.

Abstract: Provided is a display device, including sub-pixels formed on a base layer, and including a color conversion layer in a first sub-pixel area and including a quantum-dot, a first scattering layer in a second sub-pixel area and including a first scatterer, and a second scattering layer in the third sub-pixel area and including a second scatterer, a first color filter in the first sub-pixel area, a second color filter in the second sub-pixel area, and a third color filter in the third sub-pixel area, wherein emitted light from a light emitting element includes light of the second color and light of the third color, and wherein colors of light passing through the first scattering layer and the second scattering layer are substantially unchanged by the first scattering layer and the second scattering layer.

Abstract: A fluid supply nozzle for semiconductor substrate treatment, which supplies a treatment liquid in which a plurality of solutions are mixed to a semiconductor substrate, includes a nozzle body configured to mix the plurality of solutions to form a treatment liquid when the plurality of solutions are supplied into an inner space of the nozzle body, the nozzle body having a shape with an open upper portion, a solution supply channel with a plurality of solution supply pipes for supplying the plurality of solutions to the inner space, a solution guide device configured to guide the plurality of solutions and generate a rotary current or an eddy current to mix the plurality of solutions, and a rotary cartridge configured to accelerate the mixing of the plurality of solutions to generate a homogeneous treatment liquid.

Abstract: A polybutylene adipate terephthalate resin composition, and a method for preparing the same. The polybutylene adipate terephthalate resin composition includes a polybutylene adipate terephthalate resin, a chain extender, and a gel reducer. The polybutylene adipate terephthalate resin composition suppresses gel formation during the preparation process, and exhibits excellent mechanical properties and external appearance.

Abstract: A semiconductor device including a device isolation region is provided. The semiconductor device includes first active regions disposed on a substrate, and an isolation region between the active regions. The isolation region includes a first portion formed of a first insulating material, and a second portion formed of a second insulating material, having different characteristics from those of the first insulating material. The first portion is closer to the first active regions than the second portion. The second portion has a bottom surface having a height different from that of a bottom surface of the first portion.

Abstract: A semiconductor device that includes a lower pattern extending in a first direction, a first channel pattern on the lower pattern, and includes a plurality of first sheet patterns, a second channel pattern on the lower pattern, includes a plurality of second sheet patterns and spaced apart from the first channel pattern, a first gate structure which extends around the first sheet pattern, and includes a first gate electrode and a first gate insulating film, a second gate structure which extends around the second sheet pattern, and includes a second gate electrode and a second gate insulating film, a first gate capping pattern and a second gate capping pattern. The number of first sheet patterns is different from the number of second sheet patterns, and a thickness of the first gate capping pattern is different from a thickness of the second gate capping pattern.

Abstract: A semiconductor device includes a lower pattern. A channel isolation structure and a field insulating layer contact the lower pattern. A gate structure is on the lower pattern, in contact with the channel isolation structure. A channel pattern is on the lower pattern, and includes sheet patterns, each being in contact with the channel isolation structure. A source/drain pattern contacts the channel pattern and the channel isolation structure. The channel isolation structure includes a first region contacting the gate structure and a second region contacting the source/drain pattern. The second region of the channel isolation structure includes portions whose widths increase as a distance from a bottom surface of the field insulating layer increases.

Abstract: A chuck assembly according to an embodiment of the present invention includes: a rotary table on which a substrate is mounted; a rotating part concentric with a rotation center of the rotary table; and a chuck pin supporting the substrate, wherein the rotary table may include a protrusion protruding upward from a surface facing the substrate, the chuck pin may be coupled to the protrusion in such a way that the protrusion is drawn into the chuck pin, and the protrusion may be provided integrally with the surface of the rotary table facing the substrate.

Abstract: A semiconductor device includes a first and second channel separation structures extending in a first direction and spaced apart from each other in a second direction, first gate structures spaced apart from each other in the first direction between the first and second channel separation structures and in contact with the first and second channel separation structures, first and second channel patterns including first and second sheet patterns, respectively, spaced apart from each other in a third direction and in contact with the corresponding first and second channel separation structures, first and second source/drain patterns between the first and second channel separation structures, the first source/drain patterns in contact with the first channel patterns and the first channel separation structure, the second source/drain patterns in contact with the second channel patterns and the second channel separation structure, and first gate separation structures between the first and second source/drain patte

Abstract: A coil component includes: a body having a first surface and a second surface opposing each other, and a side surface connecting the first surface and the second surface to each other; a support member disposed in the body; a coil unit disposed in the body and including a coil pattern disposed on the support member, and first and second lead patterns respectively extending from the coil pattern and exposed to the first surface of the body; a first insulating layer disposed on the first surface of the body and having first and second openings exposing at least a portion of the first and second lead patterns, respectively; and a second insulating layer covering the side surface of the body.

Abstract: A coil component includes a body having a first surface and including first and second recessed-cutout portions spaced apart from each other on the first surface of the body, a support substrate, a coil unit disposed on the support substrate to be perpendicularly to the first surface of the body, and first and second external electrodes spaced apart from each other on the first surface of the body and connected to first and second lead patterns of the coil unit, respectively. The first and second external electrodes include conductive resin layers filling the first and second recessed-cutout portions to be in contact with the first and second lead patterns, each of the conductive resin layers having a first surface exposed to the first surface of the body, and the first and second external electrodes further include electrode layers disposed on the first surfaces of the conductive resin layers.

Abstract: The present disclosure provides a substrate processing apparatus provided with a rotating table for supporting and rotating a substrate and collection cups for collecting treatment solutions sprayed onto the substrate, which includes the collection cups disposed outside the rotating table and each provided therein with a space for collecting the treatment solution, one pair of lifting shafts connected to each of the collection cups, and one pair of driving modules connected to each of the lifting shafts, wherein an outermost third driving part among the driving modules is a motor driving type, an inner driving module disposed inside the third driving part is a hydraulic driving type, and a liftable height of a third collection cup connected to the third driving part and lifted by a third lifting shaft is higher than a liftable height of a collection cup lifted by the inner driving module.

Abstract: A coil component includes a resin; and a magnetic particle dispersed in the resin and comprising magnetic powder particle, an insulating layer disposed on a surface of the magnetic powder particle, and a surface-treatment layer disposed on a surface of the insulating layer.

Abstract: A supporting bar includes: a first fastening member which extends along a circumference of a trunk of a tree and includes a plurality of first circumferential portions each having one surface disposed in contact with a circumferential surface of the trunk of the tree and a first protruding portion disposed between the plurality of first circumferential portions and formed to protrude to extend from the first circumferential portions away from the trunk of the tree; and a second fastening member which extends along the circumference of the trunk of the tree and includes a plurality of second circumferential portions each having one surface disposed in contact with the circumferential surface of the trunk of the tree and a second protruding portion disposed between the plurality of second circumferential portions and formed to protrude to extend from the second circumferential portions away from the trunk of the tree.

Abstract: A coil component includes a body having a first surface and including first and second recessed-cutout portions spaced apart from each other on the first surface of the body, a support substrate, a coil unit disposed on the support substrate to be perpendicularly to the first surface of the body, and first and second external electrodes spaced apart from each other on the first surface of the body and connected to first and second lead patterns of the coil unit, respectively. The first and second external electrodes include conductive resin layers filling the first and second recessed-cutout portions to be in contact with the first and second lead patterns, each of the conductive resin layers having a first surface exposed to the first surface of the body, and the first and second external electrodes further include electrode layers disposed on the first surfaces of the conductive resin layers.

Abstract: A semiconductor device includes an active pattern on a substrate extending in a first horizontal direction, a gate electrode on the active pattern extending in a second horizontal direction, a source/drain region on the active pattern, an upper source/drain region apart from the lower source/drain region, a lower source/drain between upper and lower source/drain regions and connected to the lower source/drain region, an upper source/drain connected to an upper source/drain region, an interlayer insulating layer surrounding the upper source/drain region, a through-via on opposing sidewalls in the second horizontal direction extending through the interlayer insulating layer in the vertical direction, the through-via being spaced from the upper source/drain region and upper source/drain contact in the second horizontal direction, the through-via being connected to the lower source/drain contact, and a dam structure on each of the opposing sidewalls in the horizontal direction of the upper source/drain region.

Abstract: A semiconductor device includes first lower nanosheets; an upper isolation layer on the first lower nanosheets; first upper nanosheets on the upper isolation layer; a first upper source/drain region on the first upper nanosheets; a second upper source/drain region on the first upper nanosheets; a first gate electrode surrounding the first lower nanosheets, the upper isolation layer, and the first upper nanosheets; a first gate cut on a side of the first gate electrode and extending from a lower surface of the first gate electrode to an upper surface of the first gate electrode; a first through via inside the first gate cut and insulated from the first gate electrode; a first upper source/drain contact on and electrically connected to the first upper source/drain region; and a second upper source/drain contact on the first upper source/drain region and electrically connecting the second upper source/drain region with the first through via.

Abstract: A display device includes a base substrate including a display area and a non-display area at a periphery of the display area; a first signal wiring on the non-display area of the base substrate and including a first wiring part and a second wiring part connected to the first wiring part; and a printed circuit board including a lead wiring on the first signal wiring. The second wiring part includes an open part passing through a surface of the second wiring part in a thickness direction, the second wiring part includes a long side extending along a first direction and a short side extending along a second direction intersecting the first direction, and a separation distance between the open part and an end of the short side of the second wiring part in the first direction is within about 0.4 times the long side of the second wiring part.

Abstract: A memory controller that controls a memory device may include a model manager configured to obtain log information on use of the memory device for a predetermined period, and generate a regression model that predicts a lifespan of the memory device based on the log information, and a performance manager configured to determine a deterioration section in which performance of the memory device is deteriorated based on the regression model, and adjust a parameter value related to an operation of the memory device in the deterioration section.

Abstract: In some embodiments, a semiconductor device includes a first active pattern extended in a first horizontal direction on a substrate, a second active pattern extended in the first horizontal direction on the substrate, a first bottom gate electrode extended in a second horizontal direction on the first active pattern, a first upper gate electrode extended in the second horizontal direction on the first bottom gate electrode, a second bottom gate electrode extended in the second horizontal direction on the second active pattern, a second upper gate electrode extended in the second horizontal direction on the second bottom gate electrode, and a first gate cut comprising a first portion isolating the first bottom gate electrode from the second bottom gate electrode and a second portion isolating the first upper gate electrode from the second upper gate electrode. A width of the second portion exceeds a width of the first portion.