Abstract: A method of a first communication node may comprise: transmitting, to a second communication node, an initiation signal indicating to initiate a collection procedure of training data for a neural network; transmitting, to the second communication node, an information signal including network parameters of the first communication node; receiving, from the second communication node, the training data in response to the information signal; training the neural network using the training data; determining optimal network parameters using the trained neural network; and performing communication with the second communication node using the optimal network parameters.

Abstract: Provided are a silicon nitride film etching composition, a method of etching a silicon nitride film using the same, and a manufacturing method of a semiconductor device. Specifically, a silicon nitride film may be highly selectively etched as compared with a silicon oxide film, and when the composition is applied to an etching process at a high temperature and a semiconductor manufacturing process, not only no precipitate occurs but also anomalous growth in which the thickness of the silicon oxide film is rather increased does not occur, thereby minimizing defects and reliability reduction.

Abstract: Provided are aminopyridine compounds and pharmaceutically acceptable compositions thereof which exhibit inhibition activity against certain mutated forms of EGFR.

Abstract: A display device includes a substrate having a first surface on which a light emitting element is located, a second surface on which a driving unit for driving the light emitting element is located, the second surface being opposite the first surface, and a first side surface between the first surface and the second surface, a first pad on the first surface of the substrate and electrically connected to the light emitting element, a second pad on the second surface of the substrate and electrically connected to the driving unit, and a side wiring on the first surface, the second surface, and the first side surface of the substrate to electrically connect the first pad and the second pad. The side wiring includes a first side wiring and a second side wiring spaced from each other.

Abstract: Disclosed is an organic light emitting diode (OLED) display comprising a substrate; an organic light emitting element disposed on the substrate; an encapsulation substrate disposed on the organic light emitting element; and an adhesive layer formed on the substrate, covering the organic light emitting element, and bonding the substrate on which the organic light emitting element is formed with the encapsulation substrate.

Abstract: Provided is a bioresorbable stent including a stent substrate including a bioresorbable polymer and a contrast medium containing an iodine component, coated on the stent substrate. Since the stent according to the present invention is absorbed in and removed from the human body after a predetermined time, it has excellent biodegradability since it has improved radiopacity by iodine contrast medium coating, it has a high radiography contrast and is very efficient even when a procedure is performed with real time radiography, and since it has low foreshortening and high flexibility, radial force, and re-coil, it may be useful for insertion into a blood vessel having a small diameter, an acute occlusive lesion, an imminent occlusive lesion, and the like.

Abstract: The present disclosure provides a method and a device for decentralized edge computing. An edge device for implementing decentralized edge computing using a plurality of neural networks having a stacked architecture is provided, including an uncooperative unit configured to generate an initial decision using a neural network of zero-th layer that is a lowest layer of the stacked architecture, an adjacently cooperative unit configured to generate a first transmission messages and a first decision using a pair of neural networks of a first layer, and a network-wide cooperative unit configured to generate a second transmission messages and a second decision using a pair of neural networks of a second layer.

Abstract: A semiconductor device is provided. The semiconductor device comprising a multi-channel active pattern on a substrate, a high dielectric constant insulating layer formed along the multi-channel active pattern on the multi-channel active pattern, wherein the high dielectric constant insulating layer comprises a metal, a silicon nitride layer formed along the high dielectric constant insulating layer on the high dielectric constant insulating layer and a gate electrode on the silicon nitride layer.

Abstract: A method for manufacturing a LiDAR device is proposed. The method may include providing a LiDAR module including a laser emitting module and a laser detecting module to a target region. The method may also include adjusting, on the basis of first detecting data obtained from the laser detecting module, a relative position of a detecting optic module with respect to the laser detecting module. The method may further include adjusting, on the basis of image data obtained from at least one image sensor, a relative position of an emitting optic module with respect to the laser emitting module.

Abstract: Provided are aminopyridine compounds and pharmaceutically acceptable compositions thereof which exhibit inhibition activity against certain mutated forms of EGFR.

Abstract: A semiconductor device including: a first transistor which include a first gate stack on a substrate; and a second transistor which includes a second gate stack on the substrate, wherein the first gate stack includes a first ferroelectric material layer disposed on the substrate, a first work function layer disposed on the first ferroelectric material layer and a first upper gate electrode disposed on the first work function layer, wherein the second gate stack includes a second ferroelectric material layer disposed on the substrate, a second work function layer disposed on the second ferroelectric material layer and a second upper gate electrode disposed on the second work function layer, wherein the first work function layer includes the same material as the second work function layer, and wherein an effective work function of the first gate stack is different from an effective work function of the second gate stack.

Abstract: Provided are a silicon nitride film etching composition, a method of etching a silicon nitride film using the same, and a manufacturing method of a semiconductor device. Specifically, a silicon nitride film may be stably etched with a high selection ratio relative to a silicon oxide film, and when the composition is applied to an etching process at a high temperature and a semiconductor manufacturing process, not only no precipitate occurs but also anomalous growth in which the thickness of the silicon oxide film is rather increased does not occur, thereby minimizing defects and reliability reduction.

Abstract: A cradle device for a computer according to an embodiment includes: a cradle part configured such that the inlet part is seated thereon and holes through which air flows are formed therein; a filter part configured to filter out foreign substances generated according to the flow of air; and a filter housing part configured such that the filter part is coupled to a top surface thereof, and fixedly coupled below the holes of the cradle part. The filter part includes a first filter part made of a mesh material, and filters out foreign substances through the first filter part before air is introduced into the inlet part.

Abstract: Provided is a method for 3D modeling based on an irregular-shaped sketch, in which the method is executed by one or more processors, and includes receiving 2D sketch data of a target object, inputting the 2D sketch data into a 3D model generation model to generate a 3D model of the target object, and displaying the generated 3D model on a display.