Abstract: A method of manufacturing a solar cell is disclosed. The method includes forming a dielectric film on a semiconductor substrate doped with a first conductive type impurity, exposing a high concentration doping region of a predetermined selective emitter by partially removing the dielectric film, and ion-implanting a second conductive type impurity into a front surface of the semiconductor substrate with the dielectric film formed thereon to form a high concentration doping layer in the semiconductor substrate to correspond to the high concentration doping region and to form a low concentration doping layer in the semiconductor substrate to correspond to a region in which the dielectric film is formed.

Abstract: A method of manufacturing a solar cell is disclosed. The method includes forming a dielectric film on a semiconductor substrate doped with a first conductive type impurity, exposing a high concentration doping region of a predetermined selective emitter by partially removing the dielectric film, and ion-implanting a second conductive type impurity into a front surface of the semiconductor substrate with the dielectric film formed thereon to form a high concentration doping layer in the semiconductor substrate to correspond to the high concentration doping region and to form a low concentration doping layer in the semiconductor substrate to correspond to a region in which the dielectric film is formed.

Abstract: A solar cell and a method of manufacturing the same are disclosed. The solar cell includes a semiconductor substrate doped with a first conductive type impurity through which a via hole passing from a first surface of the semiconductor substrate to a second surface thereof facing the first surface is formed, wherein the first surface is a light receiving surface, upper and lower emitter layers respectively formed on upper and lower surfaces of the semiconductor substrate and doped with a second conductive type impurity that is different from the first conductive type impurity, current collecting layers formed on sidewalls of the via hole and doped with a higher concentration of the first conductive type impurity than that of the semiconductor substrate, a contact electrode extending from the first surface of the semiconductor substrate to the second surface thereof so as to fill the via hole, and upper and lower electrodes respectively contacting the upper and lower emitter layers.