Abstract: Provided is a method of fabricating a semiconductor device. The method of fabricating a semiconductor device comprises forming a first layer which has a first surface, does not comprise an acid, and comprises a metal material; forming, on the first layer, a second layer which comprises a trench exposing the first surface, has a second surface intersecting the first surface within the trench, and comprises an acid and an organic material; providing a first precursor comprising an alkoxy group and silicon; and forming a third layer comprising silicon oxide on the second surface within the trench. The third layer is in contact with a portion of the first surface within the trench.

Abstract: The present disclosure provides a catalytic device for a stoichiometric air-fuel ratio gasoline engine, in which exhaust gas discharged from a gasoline engine sequentially passes through a WCC (Warm up Catalytic Converter) and a UCC (Under floor Catalytic Converter). In particular, the catalytic device may include an LNT (Lean NOx Trap) component added to one of the WCC and the UCC.

Abstract: A system for controlling a condition for entry into a fuel cut mode comprises a controller that receives a temperature of a catalyst in a catalytic converter and determines whether the temperature is within a temperature range in which the catalyst is activated, wherein the controller changes a condition for entry into the fuel cut mode according to the temperature.