Abstract: An apparatus for generating gamma voltage includes a plurality of gamma set generators and a gamma set selector. The gamma set generators generate a plurality of gamma voltage sets that include gamma voltages having different voltage levels from each other such that each gamma voltage set corresponds with a brightness mode. The gamma set selector selects any one of the gamma voltage sets in response to the brightness mode and drives data lines of a display device in accordance with the selected gamma voltage set.

Abstract: A method for fabricating a poly-silicon liquid crystal display device includes forming a poly-silicon layer including a TFT region and a storage capacitor region on a substrate, wherein the capacitor region includes an impurity injection region having a N-type impurity injection region and a P-type impurity injection region; forming a gate electrode and a storage capacitor electrode on the poly-silicon layer; injecting an N-type impurity ion with a high doping density into the N-type impurity injection region and the TFT region; injecting a P-type impurity ion with a high doping density into the P-type impurity injection region; forming an insulating layer on the gate electrode and the storage electrode; and forming a pixel electrode on the insulating layer, wherein the pixel electrode is electrically connected to the impurity injection region in the storage capacitor region.

Abstract: An organic electroluminescent display device includes a gate line receiving a gate signal, a data line crossing the gate line, the data line receiving a data signal, a switching thin film transistor switching the data signal according to the gate signal, a driving thin film transistor connected to the switching thin film transistor and receiving the data signal, a power line supplying a current to the driving thin film transistor, an organic electroluminescent diode connected to the driving thin film transistor, and a pre-charge element inputting a pre-charge voltage to the data line before the data line receives the data signal.

Abstract: A thin film transistor device includes a substrate, a buffer layer on the substrate, an active layer on the buffer layer, the active layer is formed of polycrystalline silicon and includes first undoped areas, a second lightly doped area, and third highly doped areas, a gate insulation layer on the buffer layer, a dual-gate electrode on the gate insulation layer including first and second gate electrodes corresponding to the first areas, an interlayer insulator on the gate insulation layer covering the dual-gate electrode, source and drain contact holes exposing the third areas, a gate contact hole penetrating the interlayer insulator to expose a portion of the dual-gate electrode, source and drain electrodes on the interlayer insulator contacting the third areas through the source and drain contact holes, and a third gate electrode on the interlayer insulator contacting the exposed portion of the dual-gate electrode through the gate contact hole.

Abstract: A method for fabricating a poly-silicon liquid crystal display device includes forming a poly-silicon layer including a TFT region and a storage capacitor region on a substrate, wherein the capacitor region includes an impurity injection region having a N-type impurity injection region and a P-type impurity injection region; forming a gate electrode and a storage capacitor electrode on the poly-silicon layer; injecting an N-type impurity ion with a high doping density into the N-type impurity injection region and the TFT region; injecting a P-type impurity ion with a high doping density into the P-type impurity injection region; forming an insulating layer on the gate electrode and the storage electrode; and forming a pixel electrode on the insulating layer, wherein the pixel electrode is electrically connected to the impurity injection region in the storage capacitor region.

Abstract: An electro-luminescence display device includes a supply voltage source; a data driver for driving a plurality of data lines arranged within a panel; a gamma voltage generator for generating gamma voltages to generate analog data voltages corresponding to externally inputted data signals provided to the data driver; and a threshold voltage compensator installed between the gamma voltage generator and the supply voltage source for controlling a supply voltage of the supply voltage source and to apply the controlled voltage to the gamma voltage generator.

Abstract: A thin film transistor device includes a substrate, a buffer layer on the substrate, an active layer on the buffer layer, the active layer is formed of polycrystalline silicon and includes first undoped areas, a second lightly doped area, and third highly doped areas, a gate insulation layer on the buffer layer, a dual-gate electrode on the gate insulation layer including first and second gate electrodes corresponding to the first areas, an interlayer insulator on the gate insulation layer covering the dual-gate electrode, source and drain contact holes exposing the third areas, a gate contact hole penetrating the interlayer insulator to expose a portion of the dual-gate electrode, source and drain electrodes on the interlayer insulator contacting the third areas through the source and drain contact holes, and a third gate electrode on the interlayer insulator contacting the exposed portion of the dual-gate electrode through the gate contact hole.

Abstract: A thin film transistor device includes a substrate, a buffer layer on the substrate, an active layer on the buffer layer, the active layer is formed of polycrystalline silicon and includes first undoped areas, a second lightly doped area, and third highly doped areas, a gate insulation layer on the buffer layer, a dual-gate electrode on the gate insulation layer including first and second gate electrodes corresponding to the first areas, an interlayer insulator on the gate insulation layer covering the dual-gate electrode, source and drain contact holes exposing the third areas, a gate contact hole penetrating the interlayer insulator to expose a portion of the dual-gate electrode, source and drain electrodes on the interlayer insulator contacting the third areas through the source and drain contact holes, and a third gate electrode on the interlayer insulator contacting the exposed portion of the dual-gate electrode through the gate contact hole.

Abstract: An organic electroluminescent display device includes a scan line, a data line, a voltage supply line, a switching transistor connected to the scan and data lines, a driving transistor connected to the switching transistor and the voltage supply line, a storage capacitor connected between the switching transistor and the voltage supply line, and an organic light-emitting diode connected to the driving transistor and ground. A black display voltage applied to the data line is supplied to the driving transistor when a first gate ON signal is applied to the scan line. A video data voltage applied to the data line is supplied to the driving transistor when a second gate ON signal is applied to the scan line. The voltages are applied at least once each frame.

Abstract: An organic electroluminescent display device includes: a substrate having a pixel region and a non-pixel region surrounding the pixel region; a first electrode on the substrate in the pixel region; an organic luminescent layer on the first electrode; a second electrode on the organic luminescent layer; and a light-shielding means corresponding to the non-pixel region.

Abstract: A driving method of a flat panel display includes dividing one frame into a plurality of sub-frames, wherein each sub-frame includes an on-state time, each on-state time corresponds to a weight value, and at least one of the weight values is expressed in the form of a non-binary code; applying an on-state gate signal to a pixel in each sub-frame to turn on the pixel; and applying each bit of a data signal corresponding to each sub-frame to the pixel.

Abstract: A method for fabricating a poly-silicon liquid crystal display device includes forming a poly-silicon layer including a TFT region and a storage capacitor region on a substrate, wherein the capacitor region includes an impurity injection region having a N-type impurity injection region and a P-type impurity injection region; forming a gate electrode and a storage capacitor electrode on the poly-silicon layer; injecting an N-type impurity ion with a high doping density into the N-type impurity injection region and the TFT region; injecting a P-type impurity ion with a high doping density into the P-type impurity injection region; forming an insulating layer on the gate electrode and the storage electrode; and forming a pixel electrode on the insulating layer, wherein the pixel electrode is electrically connected to the impurity injection region in the storage capacitor region.

Abstract: An analog buffer, and a driving method thereof, that has a low power consumption in driving a data line of a liquid crystal display and is insensitive to a deviation of device parameters to have a minor error between an input voltage and an output voltage, includes a first transistor and a second transistor connected in such a manner to be driven into a push-pull circuit. A first switch and a third switch connect and disconnect a first reference voltage and a second reference voltage such that the same current flows in the sources of the first and second transistors. A first capacitor charges the voltage between the gate and the source of the first transistor, and a second capacitor charges the voltage between the gate and the source of the second transistor.

Abstract: An electro-luminescence display device includes a supply voltage source; a data driver for driving a plurality of data lines arranged within a panel; a gamma voltage generator for generating gamma voltages to generate analog data voltages corresponding to externally inputted data signals provided to the data driver; and a threshold voltage compensator installed between the gamma voltage generator and the supply voltage source for controlling a supply voltage of the supply voltage source and to apply the controlled voltage to the gamma voltage generator.

Abstract: An apparatus for generating gamma voltage includes a plurality of gamma set generators and a gamma set selector. The gamma set generators generate a plurality of gamma voltage sets that include gamma voltages having different voltage levels from each other such that each gamma voltage set corresponds with a brightness mode. The gamma set selector selects any one of the gamma voltage sets in response to the brightness mode and drives data lines of a display device in accordance with the selected gamma voltage set.

Abstract: A digital driving circuit for a liquid crystal display which sequentially receives and displays n-bit digital video information from a data bus on a bit basis. The digital driving circuit comprises a first data latch for sequentially storing the digital video information from the data bus on a bit basis, a shift register for synchronizing a latching operation of the first data latch with bit positions of the digital video information from the data bus, a second data latch for storing the digital video information stored in the first data latch temporarily before digital/analog conversion, and a digital/analog converter for sequentially converting the digital video information stored in the second data latch into analog signals on a bit basis. The digital driving circuit is able to sequentially process bit information of digital video information to reduce the number of data bus lines for loading the bit information thereon and the number of data catches arranged vertically to a column direction.

Abstract: A thin film transistor device includes a substrate, a buffer layer on the substrate, an active layer on the buffer layer, the active layer is formed of polycrystalline silicon and includes first undoped areas, a second lightly doped area, and third highly doped areas, a gate insulation layer on the buffer layer, a dual-gate electrode on the gate insulation layer including first and second gate electrodes corresponding to the first areas, an interlayer insulator on the gate insulation layer covering the dual-gate electrode, source and drain contact holes exposing the third areas, a gate contact hole penetrating the interlayer insulator to expose a portion of the dual-gate electrode, source and drain electrodes on the interlayer insulator contacting the third areas through the source and drain contact holes, and a third gate electrode on the interlayer insulator contacting the exposed portion of the dual-gate electrode through the gate contact hole.

Abstract: An analog buffer, and a driving method thereof, that has a low power consumption in driving a data line of a liquid crystal display and is insensitive to a deviation of device parameters to have a minor error between an input voltage and an output voltage, includes a first transistor and a second transistor connected in such a manner to be driven into a push-pull circuit. A first switch and a third switch connect and disconnect a first reference voltage and a second reference voltage such that the same current flows in the sources of the first and second transistors. A first capacitor charges the voltage between the gate and the source of the first transistor, and a second capacitor charges the voltage between the gate and the source of the second transistor.