Abstract: A complementary metal oxide semiconductor (CMOS) device including: a semiconductor substrate including a NMOS region and a PMOS region; a NMOS metal gate stack structure on the NMOS region and including a first high dielectric layer, a first barrier metal gate on the first high dielectric layer and including a metal oxide nitride layer, and a first metal gate on the first barrier metal gate; and a PMOS metal gate stack structure on the PMOS region and including a second high dielectric layer, a second barrier metal gate on the second high dielectric layer and including a metal oxide nitride layer, and a second metal gate on the second barrier metal gate.

Abstract: A complementary metal oxide semiconductor (CMOS) device including: a semiconductor substrate including a NMOS region and a PMOS region; a NMOS metal gate stack structure on the NMOS region and including a first high dielectric layer, a first barrier metal gate on the first high dielectric layer and including a metal oxide nitride layer, and a first metal gate on the first barrier metal gate; and a PMOS metal gate stack structure on the PMOS region and including a second high dielectric layer, a second barrier metal gate on the second high dielectric layer and including a metal oxide nitride layer, and a second metal gate on the second barrier metal gate.