Abstract: Embodiments of the present disclosure relate to a quantum device including moderate fluorinated graphene and a method for fabricating the same. According to an exemplary embodiment of the present disclosure, there is provided a quantum device including moderate fluorinated graphene, the quantum device including a substrate, a first insulating layer located on the substrate, a graphene layer located on the first insulating layer, and a second insulating layer located on the graphene layer and covering a third region excluding a first region and second region on both sides of the graphene layer, in which the first region and second region of the graphene layer are formed of moderate fluorinated graphene, and a metal layer is formed on the first region and the second region, and the metal layer makes contact at some locations on the moderate fluorinated graphene.