Abstract: A pharmaceutical composition comprising HLA-A2-expressing mesenchymal stem cells as an effective ingredient and its use in prevention or treatment of inflammatory disease are disclosed. The mesenchymal stem cells expressing HLA-A2 on the surface thereof inhibit the secretion of the inflammatory cytokine TNF-a and increase the expression of the anti-inflammatory markers CD163 and Arg-1, so that the pharmaceutical composition comprising the mesenchymal stem cells as an effective ingredient can be advantageously used for suppressing inflammation or treating inflammatory diseases.

Abstract: Provided is a composition for preventing hair-loss and promoting hair growth, which contains, as an active ingredient, a conditioned media of stem cells stimulated by particular hair catagen inducers including TGF-?, a method of manufacturing the same, and methods of treatment thereof. In particular, disclosed is a use of the function of very effective hair growth by secreting Wnt3a, Bcl-2, CyclinD-1 and the like, which are known as signal transduction proteins.

Abstract: The present invention relates to a hydraulic percussion device and a construction apparatus having the same, the hydraulic percussion device comprising: a cylinder; a piston; a backward port connecting a front chamber of the cylinder to a hydraulic source; a forward port formed on a rear chamber of the cylinder; a forward/backward valve for controlling the forward and backward movement of the piston; a control line for moving the forward/backward valve to a forward-movement location; a long-stroke port formed between the forward port and the backward port; a short-stroke port formed between the backward port on the cylinder and the long-stroke port; a shift valve disposed between the short-stroke port and the control line; a proximity sensor for detecting a bottom dead point of the piston upon the stroke on an object; and a controller for determining a striking condition on the basis of the detected bottom dead point, and transmitting a control signal to the shift valve.

Abstract: The present invention relates to a hydraulic percussion device and a construction apparatus having the same, the hydraulic percussion device comprising: a cylinder; a piston; a backward port connecting a front chamber of the cylinder to a hydraulic source; a forward port formed on a rear chamber of the cylinder; a forward/backward valve for controlling the forward and backward movement of the piston; a control line for moving the forward/backward valve to a forward-movement location; a long-stroke port formed between the forward port and the backward port; a short-stroke port formed between the backward port on the cylinder and the long-stroke port; a shift valve disposed between the short-stroke port and the control line; a proximity sensor for detecting a bottom dead point of the piston upon the stroke on an object; and a controller for determining a striking condition on the basis of the detected bottom dead point, and transmitting a control signal to the shift valve.

Abstract: A semiconductor device includes first source/drain regions disposed at both sides of a first gate structure and including dopants of a first conductivity type, counter regions being in contact with upper portions of the first source/drain regions and under both end portions of the first gate structure, and first halo regions in contact with bottom surfaces of the first source/drain regions. The counter regions include dopants of a second conductivity type that is different from the first conductivity type. The first halo regions include dopants of the second conductivity type.

Abstract: A semiconductor device includes first source/drain regions disposed at both sides of a first gate structure and including dopants of a first conductivity type, counter regions being in contact with upper portions of the first source/drain regions and under both end portions of the first gate structure, and first halo regions in contact with bottom surfaces of the first source/drain regions. The counter regions include dopants of a second conductivity type that is different from the first conductivity type. The first halo regions include dopants of the second conductivity type.

Abstract: A semiconductor device includes first source/drain regions disposed at both sides of a first gate structure and including dopants of a first conductivity type, counter regions being in contact with upper portions of the first source/drain regions and under both end portions of the first gate structure, and first halo regions in contact with bottom surfaces of the first source/drain regions. The counter regions include dopants of a second conductivity type that is different from the first conductivity type. The first halo regions include dopants of the second conductivity type.

Abstract: Provided are a composition for preventing hair loss and stimulating hair growth, which includes small-sized stem cells, particularly, small-sized stem cells having a diameter of 8 ?m or less, or a culture thereof as an active ingredient, a method of preparing the same, and a use of the same. Provided is a use of the composition utilizing a hair growth stimulating function of the small-sized stem cells having a diameter of 8 ?m or less to considerably increase activity of hair follicle stem cells in a telogen phase.

Abstract: A semiconductor device includes first source/drain regions disposed at both sides of a first gate structure and including dopants of a first conductivity type, counter regions being in contact with upper portions of the first source/drain regions and under both end portions of the first gate structure, and first halo regions in contact with bottom surfaces of the first source/drain regions. The counter regions include dopants of a second conductivity type that is different from the first conductivity type. The first halo regions include dopants of the second conductivity type.

Abstract: Provided are a semiconductor device and a method of fabricating the same. According to the semiconductor device, a silicide layer is formed on at least a part of both sidewalls of a gate pattern on a device isolation layer, thereby reducing resistance of the gate pattern. This makes an operation speed of the device rapid. According to the method of the semiconductor device, a sidewall spacer pattern is formed on at least a part of both sidewalls of the gate pattern in following salicide process by entirely or partially removing remaining portions of the sidewall spacer except for portions which are used as an ion implantation mask to form source/drain regions. This can reduce resistance of the gate pattern, thereby fabricating a semiconductor device with a rapid operation speed.

Abstract: Provided is an a composition for preventing hair-loss and promoting hair growth containing as an active ingredient conditioned media of stem cells stimulated by particular hair catagen inducers including TGF-?, a method of manufacturing the same, and a use thereof. In particular, the present invention relates to a use of the function of very effective hair growth by secreting Wnt3a, Bcl-2, CyclinD-1 and the like, which are known as signal transduction proteins.

Abstract: Provided are a composition for preventing hair loss and stimulating hair growth, which includes small-sized stem cells, particularly, small-sized stem cells having a diameter of 8 ?m or less, or a culture thereof as an active ingredient, a method of preparing the same, and a use of the same. Provided is a use of the composition utilizing a hair growth stimulating function of the small-sized stem cells having a diameter of 8 ?m or less to considerably increase activity of hair follicle stem cells in a telogen phase.

Abstract: Provided are a semiconductor device and a method of fabricating the same. According to the semiconductor device, a silicide layer is formed on at least a part of both sidewalls of a gate pattern on a device isolation layer, thereby reducing resistance of the gate pattern. This makes an operation speed of the device rapid. According to the method of the semiconductor device, a sidewall spacer pattern is formed on at least a part of both sidewalls of the gate pattern in following salicide process by entirely or partially removing remaining portions of the sidewall spacer except for portions which are used as an ion implantation mask to form source/drain regions. This can reduce resistance of the gate pattern, thereby fabricating a semiconductor device with a rapid operation speed.

Abstract: Provided are a semiconductor device and a method of fabricating the same. According to the semiconductor device, a silicide layer is formed on at least a part of both sidewalls of a gate pattern on a device isolation layer, thereby reducing resistance of the gate pattern. This makes an operation speed of the device rapid. According to the method of the semiconductor device, a sidewall spacer pattern is formed on at least a part of both sidewalls of the gate pattern in following salicide process by entirely or partially removing remaining portions of the sidewall spacer except for portions which are used as an ion implantation mask to form source/drain regions. This can reduce resistance of the gate pattern, thereby fabricating a semiconductor device with a rapid operation speed.

Abstract: The present disclosure includes an adapter and associated method of use for mobile unit (MU) charging and communication that enables multiple connector types to be utilized with a single charger or charging station. The adapter enables standardization of a connector scheme on newer MUs while maintaining compatibility with current or older MU devices. Specifically, the adapter resides between the MU and a charging device or station. The adapter may include various connector features mimicking connectors of various different MUs, thus allowing it to interface with a device of a different connector design. Advantageously, the adapter enables enterprises to deploy various cradles throughout facilities and achieves universal connections for a plurality of different MUs. In an exemplary embodiment, the adapter provides connectivity between various MUs and their associated cradles and a hook and pivoting latching system.

Abstract: Provided are a semiconductor device and a method of fabricating the same. According to the semiconductor device, a silicide layer is formed on at least a part of both sidewalls of a gate pattern on a device isolation layer, thereby reducing resistance of the gate pattern. This makes an operation speed of the device rapid. According to the method of the semiconductor device, a sidewall spacer pattern is formed on at least a part of both sidewalls of the gate pattern in following salicide process by entirely or partially removing remaining portions of the sidewall spacer except for portions which are used as an ion implantation mask to form source/drain regions. This can reduce resistance of the gate pattern, thereby fabricating a semiconductor device with a rapid operation speed.

Abstract: A needle-coupled parallel mechanism is provided. The needle-coupled parallel mechanism is structurally improved so as to have a broad working area and a high precision. The needle-coupled parallel mechanism comprises a fixedly positioned frame, a main shaft, three first links, three second links, and a needle. The main shaft is arranged so as to be movable relative to the frame. One end of each of the first links is connected to the frame between both ends of the main shaft and the other end thereof is connected to one end of the main shaft. One end of each of the second links is connected to the frame between both ends of the main shaft and the other end thereof is connected to the other end of the main shaft. The needle is linearly movably coupled to the main shaft to perform a predetermined operation on a target object. Each of the first links and the second links has at least three joints selected from a prismatic joint, a 1-axis revolute joint, a 2-axis revolute joint and a spherical joint.

Abstract: An interconnection structure and an electronic device employing the same are provided. The interconnection structure for an integrated structure includes first and second contact plugs disposed on a substrate, and a connection pattern interposed between sidewalls of the first and second contact plugs and configured to electrically connect the first and second contact plugs.

Abstract: A full complementary metal-oxide semiconductor (CMOS) static random access memory (SRAM) may have a reduced cell size by arranging a word line of a pair of transistors arranged on the uppermost layer of the SRAM. First and second transistors may be arranged on first and second active regions. Third and fourth transistors may be arranged on first and second semiconductor layers formed over the first and second active regions. Fifth and sixth transistors may be arranged on the third and fourth semiconductor layers over the first and second semiconductor layers. A word line may be arranged in a straight line between the first and second gates of the first and second transistors and between the third and fourth gates of the third and fourth transistors.

Abstract: A semiconductor device includes a body region having a source region, a drain region, a channel region interposed between the source region and the drain region, and a body region extension extending from an end of the channel region. A gate pattern is formed on the channel region and the body region, and a body contact connects the gate pattern to the body region. A sidewall of the body region extension is self-aligned to a sidewall of the gate pattern. Methods of forming semiconductor devices having a self-aligned body and a body contact are also disclosed.