Patents by Inventor Hoon-sang Choi
Hoon-sang Choi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10879248Abstract: A semiconductor device includes a substrate, a conductive pattern on the substrate, a lower electrode electrically connected to the conductive pattern, a dielectric layer covering a surface of the lower electrode, a first upper electrode on the dielectric layer, a diffusion barrier on an upper surface of the first upper electrode, and a second upper electrode covering the diffusion barrier, the second upper electrode including a different material from that of the first upper electrode.Type: GrantFiled: February 21, 2019Date of Patent: December 29, 2020Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Hoon-Sang Choi, Hyeok-Jin Jeong, Jung-Kun Lim, Young-Mo Tak, Sung-Kil Han
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Publication number: 20190189615Abstract: A semiconductor device includes a substrate, a conductive pattern on the substrate, a lower electrode electrically connected to the conductive pattern, a dielectric layer covering a surface of the lower electrode, a first upper electrode on the dielectric layer, a diffusion barrier on an upper surface of the first upper electrode, and a second upper electrode covering the diffusion barrier, the second upper electrode including a different material from that of the first upper electrode.Type: ApplicationFiled: February 21, 2019Publication date: June 20, 2019Inventors: Hoon-Sang CHOI, Hyeok-Jin JEONG, Jung-Kun LIM, Young-Mo TAK, Sung-Kil HAN
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Publication number: 20170186752Abstract: A semiconductor device includes a substrate, a conductive pattern on the substrate, a lower electrode electrically connected to the conductive pattern, a dielectric layer covering a surface of the lower electrode, a first upper electrode on the dielectric layer, a diffusion barrier on an upper surface of the first upper electrode, and a second upper electrode covering the diffusion barrier, the second upper electrode including a different material from that of the first upper electrode.Type: ApplicationFiled: December 23, 2016Publication date: June 29, 2017Inventors: Hoon-Sang CHOI, Hyeok-Jin JEONG, Jung-Kun LIM, Young-Mo TAK, Sung-Kil HAN
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Patent number: 8546270Abstract: An atomic layer deposition apparatus and an atomic layer deposition method increase productivity. The atomic layer deposition apparatus includes a reaction chamber, a heater for supporting a plurality of semiconductor substrates with a given interval within the reaction chamber and to heat the plurality of semiconductor substrates and a plurality of injectors respectively positioned within the reaction chamber and corresponding to the plurality of semiconductor substrates supported by the heater. The plurality of injectors are individually swept above the plurality of semiconductor substrates to spray reaction gas.Type: GrantFiled: February 28, 2013Date of Patent: October 1, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Ki-Hyun Kim, Ki-Vin Im, Hoon-Sang Choi, Moon-Hyeong Han
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Patent number: 8394201Abstract: An atomic layer deposition apparatus and an atomic layer deposition method increase productivity. The atomic layer deposition apparatus includes a reaction chamber, a heater for supporting a plurality of semiconductor substrates with a given interval within the reaction chamber and to heat the plurality of semiconductor substrates and a plurality of injectors respectively positioned within the reaction chamber and corresponding to the plurality of semiconductor substrates supported by the heater. The plurality of injectors are individually swept above the plurality of semiconductor substrates to spray reaction gas.Type: GrantFiled: January 21, 2009Date of Patent: March 12, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Ki-Hyun Kim, Ki-Vin Im, Hoon-Sang Choi, Moon-Hyeong Han
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Patent number: 8357593Abstract: Provided are methods of removing water adsorbed or bonded to a surface of a semiconductor substrate, and methods of depositing an atomic layer using the method of removing water described herein. The method of removing water includes applying a chemical solvent to the surface of a semiconductor substrate, and removing the chemical solvent from the surface of the semiconductor substrate.Type: GrantFiled: January 15, 2010Date of Patent: January 22, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Ki-chul Kim, Youn-soo Kim, Ki-vin Im, Cha-young Yoo, Jong-cheol Lee, Ki-yeon Park, Hoon-sang Choi, Se-hoon Oh
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Patent number: 8339765Abstract: A capacitor includes a substrate, a plurality of first storage electrodes, a plurality of second storage electrodes, a first supporting layer pattern, a dielectric layer and a plate electrode. A plurality of contact pads is formed I the substrate. The first storage electrodes are arranged along lines parallel with a first direction and electrically connected to the contact pads, respectively. The second storage electrodes are respectively stacked on the first storage electrodes. The first supporting layer pattern extends in a direction parallel with the first direction between adjacent second storage electrodes and makes contact with the adjacent second storage electrodes to support the second storage electrodes. The dielectric layer is formed on the first and second storage electrodes. The plate electrode is formed on the dielectric layer.Type: GrantFiled: December 1, 2009Date of Patent: December 25, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Hoon-Sang Choi, Ki-Vin Im, Se-Hoon Oh, Sang-Yeol Kang, Cha-Young Yoo
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Patent number: 8110473Abstract: A semiconductor device including a multilayer dielectric film and a method for fabricating the semiconductor device are disclosed. The multilayer dielectric film includes a type-one dielectric film having a tetragonal crystalline structure, wherein the type-one dielectric film comprises a first substance. The multilayer dielectric film also comprises a type-two dielectric film also having a tetragonal crystalline structure, wherein the type-two dielectric film comprises a second substance different from the first substance and a dielectric constant of the type-two dielectric film is greater than a dielectric constant of the type-one dielectric film.Type: GrantFiled: December 10, 2009Date of Patent: February 7, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Sang-yeol Kang, Jong-cheol Lee, Ki-vin Lim, Hoon-sang Choi, Eun-ae Chung
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Patent number: 7939872Abstract: A multi-dielectric film including at least one first dielectric film that is a composite film made of zirconium-hafnium-oxide and at least one second dielectric film that is a metal oxide film made of amorphous metal oxide. Adjacent ones of the dielectric films are made of different materials.Type: GrantFiled: March 28, 2008Date of Patent: May 10, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Jong-Cheol Lee, Sang-Yeol Kang, Ki-Vin Lim, Hoon-Sang Choi, Eun-Ae Chung
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Patent number: 7824501Abstract: Provided is an in-situ method of cleaning a vaporizer of an atomic layer deposition apparatus during a dielectric layer deposition process, to prevent nozzle blocking in the vaporizer and an atomic layer deposition apparatus. During the dielectric layer deposition process, the following steps are repeated: supplying a first source gas for dielectric layer deposition into a chamber of an atomic layer deposition apparatus; purging the first source gas; supplying a second source gas into the chamber of the atomic layer deposition apparatus; purging the second source gas, the in-situ method of cleaning the vaporizer is performed after supplying the first source gas for dielectric layer deposition and before supplying the first source gas again.Type: GrantFiled: July 23, 2007Date of Patent: November 2, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: Hoon-sang Choi, Jong-cheol Lee, Ki-vin Im, Eun-ae Chung, Sang-yeol Kang, Young-sun Kim, Kwang-hee Lee
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Publication number: 20100255651Abstract: A semiconductor device including a multilayer dielectric film and a method for fabricating the semiconductor device are disclosed. The multilayer dielectric film includes a type-one dielectric film having a tetragonal crystalline structure, wherein the type-one dielectric film comprises a first substance. The multilayer dielectric film also comprises a type-two dielectric film also having a tetragonal crystalline structure, wherein the type-two dielectric film comprises a second substance different from the first substance and a dielectric constant of the type-two dielectric film is greater than a dielectric constant of the type-one dielectric film.Type: ApplicationFiled: December 10, 2009Publication date: October 7, 2010Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sang-yeol KANG, Jong-cheol LEE, Ki-vin LIM, Hoon-sang CHOI, Eun-ae CHUNG
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Patent number: 7791125Abstract: A method of forming a semiconductor device includes loading a semiconductor substrate into a reaction chamber, and providing metal organic precursors including hafnium and zirconium into the reaction chamber to form hafnium-zirconium oxide (HfxZr1-xO; 0<X<1) with a tetragonal crystalline structure on the semiconductor substrate. Related structures are also discussed.Type: GrantFiled: July 27, 2007Date of Patent: September 7, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: Hoon-Sang Choi, Jong-Cheol Lee, Ki-Vin Im, Jae-Hyun Yeo, Eun-Ae Chung, Sang-Yeol Kang
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Publication number: 20100190320Abstract: Provided are methods of removing water adsorbed or bonded to a surface of a semiconductor substrate, and methods of depositing an atomic layer using the method of removing water described herein. The method of removing water includes applying a chemical solvent to the surface of a semiconductor substrate, and removing the chemical solvent from the surface of the semiconductor substrate.Type: ApplicationFiled: January 15, 2010Publication date: July 29, 2010Inventors: Ki-chul Kim, Youn-soo Kim, Ki-vin Im, Cha-young Yoo, Jong-cheol Lee, Ki-yeon Park, Hoon-sang Choi, Se-hoon Oh
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Patent number: 7759718Abstract: A method of forming a dielectric layer in a capacitor adapted for use in a semiconductor device is disclosed. The method includes forming a first ZrO2 layer, forming an interfacial layer using a plasma treatment on the first ZrO2 layer, and forming a second ZrO2 layer on the interfacial layer.Type: GrantFiled: October 2, 2007Date of Patent: July 20, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: Sang-yeol Kang, Jong-cheol Lee, Ki-vin Im, Jae-hyun Yeo, Hoon-sang Choi, Eun-ae Chung
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Publication number: 20100134950Abstract: A capacitor includes a substrate, a plurality of first storage electrodes, a plurality of second storage electrodes, a first supporting layer pattern, a dielectric layer and a plate electrode. A plurality of contact pads is formed I the substrate. The first storage electrodes are arranged along lines parallel with a first direction and electrically connected to the contact pads, respectively. The second storage electrodes are respectively stacked on the first storage electrodes. The first supporting layer pattern extends in a direction parallel with the first direction between adjacent second storage electrodes and makes contact with the adjacent second storage electrodes to support the second storage electrodes. The dielectric layer is formed on the first and second storage electrodes. The plate electrode is formed on the dielectric layer.Type: ApplicationFiled: December 1, 2009Publication date: June 3, 2010Inventors: Hoon-Sang Choi, Ki-Vin Im, Se-Hoon Oh, Sang-Yeol Kang, Cha-Young Yoo
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Publication number: 20090309187Abstract: Provided is a semiconductor device including a multi-layer dielectric structure and a method of fabricating the semiconductor device. According to one example embodiment, the semiconductor device includes a capacitor comprising: first and second electrodes facing each other; at least one first dielectric layer that is disposed between the first and second electrodes, the at least one first dielectric layer comprising a first high-k dielectric layer doped with silicon; and at least one second dielectric layer that is disposed between the at least one first dielectric layer and any of the first and second electrodes, the at least one second dielectric layer having a higher crystallization temperature than that of the first dielectric layer.Type: ApplicationFiled: August 20, 2009Publication date: December 17, 2009Inventors: Jae-hyoung Choi, Cha-young Yoo, Jong-cheol Lee, Kyoung-ryul Yoon, Ki-vin Im, Hoon-sang Choi, Se-hoon Oh, Se-hwi Cho
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Publication number: 20090191717Abstract: An atomic layer deposition apparatus and an atomic layer deposition method increase productivity. The atomic layer deposition apparatus includes a reaction chamber, a heater for supporting a plurality of semiconductor substrates with a given interval within the reaction chamber and to heat the plurality of semiconductor substrates and a plurality of injectors respectively positioned within the reaction chamber and corresponding to the plurality of semiconductor substrates supported by the heater. The plurality of injectors are individually swept above the plurality of semiconductor substrates to spray reaction gas.Type: ApplicationFiled: January 21, 2009Publication date: July 30, 2009Inventors: Ki-Hyun KIM, Ki-Vin IM, Hoon-Sang CHOI, Moon-Hyeong HAN
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Publication number: 20090014777Abstract: Provided are flash memory devices. Embodiments of such devices may include a tunnel insulator formed on a substrate, a charge-storage layer formed on the tunnel insulator, a lower buffer layer formed on the charge-storage layer, a blocking layer formed on the lower buffer layer, and a first gate electrode formed on the blocking layer. Such devices may include second gate electrode formed on the first gate electrode, such that the lower buffer layer includes a silicon-free insulator, the blocking layer includes oxides or ternary lanthanum compounds, and the oxides or ternary lanthanum compounds include lanthanide elements.Type: ApplicationFiled: June 23, 2008Publication date: January 15, 2009Inventors: Chun-Hyung Chung, Seung-Hwan Lee, Bong-Jin Kuh, Sun-Jung Kim, Hoon-Sang Choi, Sang-Wook Lim, Young-Sun Kim
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Publication number: 20080258271Abstract: A multi-dielectric film including at least one first dielectric film that is a composite film made of zirconium-hafnium-oxide and at least one second dielectric film that is a metal oxide film made of amorphous metal oxide. Adjacent ones of the dielectric films are made of different materials.Type: ApplicationFiled: March 28, 2008Publication date: October 23, 2008Inventors: Jong-Cheol Lee, Sang-Yeol Kang, Ki-Vin Lim, Hoon-Sang Choi, Eun-Ae Chung
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Publication number: 20080203529Abstract: A semiconductor device including a multilayer dielectric film and a method for fabricating the semiconductor device are disclosed. The multilayer dielectric film includes a type-one dielectric film having a tetragonal crystalline structure, wherein the type-one dielectric film comprises a first substance. The multilayer dielectric film also comprises a type-two dielectric film also having a tetragonal crystalline structure, wherein the type-two dielectric film comprises a second substance different from the first substance and a dielectric constant of the type-two dielectric film is greater than a dielectric constant of the type-one dielectric film.Type: ApplicationFiled: February 21, 2008Publication date: August 28, 2008Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sang-yeol Kang, Jong-cheol Lee, Ki-vin Lim, Hoon-sang Choi, Eun-ae Chung