Patents by Inventor Hoong J. Lee

Hoong J. Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Thin film resistors comprising ruthenium oxide
    Patent number: 5585776
    Abstract: In a first embodiment of the invention a layer of ruthenium oxide is reactively deposited onto a substrate, then annealed for TCR adjustment and for stabilization. In a second, bi-layer embodiment of the invention, a layer of tantalum nitride is first reactively deposited onto a substrate, then annealed for stabilization. After a ruthenium oxide layer is reactively deposited onto the annealed tantalum nitride layer, the structure is annealed until a near-zero effective TCR for the bi-layer resistor is achieved. The ruthenium oxide capping layer serves as a barrier against chemical attack.
    Type: Grant
    Filed: November 9, 1993
    Date of Patent: December 17, 1996
    Assignee: Research Foundation of the State University of NY
    Inventors: Wayne Anderson, Franklyn M. Collins, Quanxi Jia, Kaili Jiao, Hoong J. Lee