Patents by Inventor Hoong Shing Wong

Hoong Shing Wong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210082706
    Abstract: A method includes forming a first gate dielectric and a second gate dielectric over a first semiconductor region and a second semiconductor region, respectively, depositing a lanthanum-containing layer including a first portion and a second portion overlapping the first gate dielectric and the second gate dielectric, respectively, and depositing a hard mask including a first portion and a second portion overlapping the first portion and the second portion of the lanthanum-containing layer, respectively. The hard mask is free from both of titanium and tantalum. The method further includes forming a patterned etching mask to cover the first portion of the hard mask, with the second portion of the hard mask being exposed, removing the second portion of the hard mask and the second portion of the lanthanum-containing layer, and performing an anneal to drive lanthanum in the first portion of the lanthanum-containing layer into the first gate dielectric.
    Type: Application
    Filed: September 17, 2019
    Publication date: March 18, 2021
    Inventors: Kuo-Feng Yu, Chun Hsiung Tsai, Jian-Hao Chen, Hoong Shing Wong, Chih-Yu Hsu
  • Patent number: 10128333
    Abstract: A FinFET has shaped epitaxial structures for the source and drain that are electrically isolated from the substrate. Shaped epitaxial structures in the active region are separated from the substrate in the source and drain regions while those in the channel region remain. The gaps created by the separation in the source and drain are filled with electrically insulating material. Prior to filling the gaps, defects created by the separation may be reduced.
    Type: Grant
    Filed: June 20, 2017
    Date of Patent: November 13, 2018
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Hoong Shing Wong, Min-hwa Chi, Tae-Hoon Kim
  • Publication number: 20170288016
    Abstract: A FinFET has shaped epitaxial structures for the source and drain that are electrically isolated from the substrate. Shaped epitaxial structures in the active region are separated from the substrate in the source and drain regions while those in the channel region remain. The gaps created by the separation in the source and drain are filled with electrically insulating material. Prior to filling the gaps, defects created by the separation may be reduced.
    Type: Application
    Filed: June 20, 2017
    Publication date: October 5, 2017
    Applicant: GLOBALFOUNDRIES INC.
    Inventors: Hoong Shing WONG, Min-hwa CHI, Tae-Hoon KIM
  • Patent number: 9337340
    Abstract: A semiconductor structure in fabrication includes a n-FinFET and p-FinFET. Stress inducing materials such as silicon and silicon germanium are epitaxially grown into naturally diamond-shaped structures atop the silicon fins of the n-FinFET and p-FinFET areas. The diamond structures act as the source, drain and channel between the source and drain. The diamond structures of the channel are selectively separated from the fin while retaining the fin connections of the diamond-shaped growth of the source and the drain. Further fabrication to complete the structure may then proceed.
    Type: Grant
    Filed: March 12, 2015
    Date of Patent: May 10, 2016
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Min-Hwa Chi, Hoong Shing Wong
  • Publication number: 20160049495
    Abstract: Semiconductor structures and fabrication methods are provided which includes, for instance, providing a gate structure over a semiconductor substrate, the gate structure including multiple conformal gate layers and a gate material disposed within the multiple conformal gate layers; recessing a portion of the multiple conformal gate layers below an upper surface of the gate structure, where upper surfaces of recessed, multiple conformal gate layers are coplanar; and removing a portion of the gate material to facilitate an upper surface of a remaining portion of the gate material to be coplanar with an upper surface of the recessed, multiple conformal gate layers.
    Type: Application
    Filed: August 18, 2014
    Publication date: February 18, 2016
    Applicants: LAM RESEARCH CORPORATION, GLOBALFOUNDRIES INC.
    Inventors: Kristina TREVINO, Yuan-Hung LIU, Gabriel Padron WELLS, Xing ZHANG, Hoong Shing WONG, Chang Ho MAENG, Taejoon HAN, Gowri KAMARTHY, Isabelle ORAIN, Ganesh UPADHYAYA
  • Patent number: 9252238
    Abstract: Semiconductor structures and fabrication methods are provided which includes, for instance, providing a gate structure over a semiconductor substrate, the gate structure including multiple conformal gate layers and a gate material disposed within the multiple conformal gate layers; recessing a portion of the multiple conformal gate layers below an upper surface of the gate structure, where upper surfaces of recessed, multiple conformal gate layers are coplanar; and removing a portion of the gate material to facilitate an upper surface of a remaining portion of the gate material to be coplanar with an upper surface of the recessed, multiple conformal gate layers.
    Type: Grant
    Filed: August 18, 2014
    Date of Patent: February 2, 2016
    Assignees: LAM RESEARCH CORPORATION, GLOBALFOUNDRIES INC.
    Inventors: Kristina Trevino, Yuan-Hung Liu, Gabriel Padron Wells, Xing Zhang, Hoong Shing Wong, Chang Ho Maeng, Taejoon Han, Gowri Kamarthy, Isabelle Orain, Ganesh Upadhyaya
  • Publication number: 20150311083
    Abstract: A method includes providing a gate structure having a dummy gate, a first spacer along a side of the gate. The dummy gate and the spacer are removed to expose a gate dielectric. A second spacer is deposited on at least one side of a gate structure cavity and a top of the gate dielectric. A bottom portion of the second spacer is removed to expose the gate dielectric and the gate structure is wet cleaned.
    Type: Application
    Filed: April 23, 2014
    Publication date: October 29, 2015
    Applicant: GLOBALFOUNDRIES INC.
    Inventors: Changyong XIAO, Hoong Shing WONG, Deepasree KONDUPARTHI, Rohit PAL
  • Patent number: 9159567
    Abstract: A method includes providing a gate structure having a dummy gate, a first spacer along a side of the gate. The dummy gate and the spacer are removed to expose a gate dielectric. A second spacer is deposited on at least one side of a gate structure cavity and a top of the gate dielectric. A bottom portion of the second spacer is removed to expose the gate dielectric and the gate structure is wet cleaned.
    Type: Grant
    Filed: April 23, 2014
    Date of Patent: October 13, 2015
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Changyong Xiao, Hoong Shing Wong, Deepasree Konduparthi, Rohit Pal
  • Patent number: 9153496
    Abstract: Methods of manufacturing semiconductor integrated circuits having FinFET structures with epitaxially formed source and drain regions are disclosed. A method of fabricating an integrated circuit includes forming a plurality of silicon fin structures on a semiconductor substrate, epitaxially growing a silicon material on the fin structures, wherein a merged source/drain region is formed on the fin structures, and anisotropically etching at least one of the merged source drain regions to form an un-merged source/drain region.
    Type: Grant
    Filed: December 15, 2014
    Date of Patent: October 6, 2015
    Assignee: GLOBALFOUNDRIES, INC.
    Inventors: Hoong Shing Wong, Min-hwa Chi
  • Patent number: 9147680
    Abstract: Integrated circuits having replacement metal gates with improved threshold voltage performance and methods for fabricating such integrated circuits are provided. A method includes providing a dielectric layer overlying a semiconductor substrate. The dielectric layer has a first and a second trench. A gate dielectric layer is formed in the first and second trench. A first barrier layer is formed overlying the gate dielectric layer. A work function material layer is formed within the trenches. The work function material layer and the first barrier layer are recessed in the first and second trench. The work function material layer and the first barrier layer form a beveled surface. The gate dielectric layer is recessed in the first and second trench. A conductive gate electrode material is deposited such that it fills the first and second trench. The conductive gate electrode material is recessed in the first and second trench.
    Type: Grant
    Filed: July 17, 2013
    Date of Patent: September 29, 2015
    Assignee: GLOBALFOUNDRIES, INC.
    Inventors: Kristina Trevino, Yuan-Hung Lin, Gabriel Padron Wells, Chang Ho Maeng, Taejoon Han, Hoong Shing Wong
  • Publication number: 20150221726
    Abstract: A FinFET has shaped epitaxial structures for the source and drain that are electrically isolated from the substrate. Shaped epitaxial structures in the active region are separated from the substrate in the source and drain regions while those in the channel region remain. The gaps created by the separation in the source and drain are filled with electrically insulating material. Prior to filling the gaps, defects created by the separation may be reduced.
    Type: Application
    Filed: February 4, 2014
    Publication date: August 6, 2015
    Inventors: Hoong Shing Wong, Min-hwa Chi, Tae-Hoon Kim
  • Publication number: 20150187947
    Abstract: A semiconductor structure in fabrication includes a n-FinFET and p-FinFET. Stress inducing materials such as silicon and silicon germanium are epitaxially grown into naturally diamond-shaped structures atop the silicon fins of the n-FinFET and p-FinFET areas. The diamond structures act as the source, drain and channel between the source and drain. The diamond structures of the channel are selectively separated from the fin while retaining the fin connections of the diamond-shaped growth of the source and the drain. Further fabrication to complete the structure may then proceed.
    Type: Application
    Filed: March 12, 2015
    Publication date: July 2, 2015
    Applicant: GLOBALFOUNDRIES INC.
    Inventors: Min-Hwa CHI, Hoong Shing WONG
  • Patent number: 9006066
    Abstract: A semiconductor structure in fabrication includes a n-FinFET and p-FinFET. Stress inducing materials such as silicon and silicon germanium are epitaxially grown into naturally diamond-shaped structures atop the silicon fins of the n-FinFET and p-FinFET areas. The diamond structures act as the source, drain and channel between the source and drain. The diamond structures of the channel are selectively separated from the fin while retaining the fin connections of the diamond-shaped growth of the source and the drain. Further fabrication to complete the structure may then proceed.
    Type: Grant
    Filed: April 26, 2013
    Date of Patent: April 14, 2015
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: Min-Hwa Chi, Hoong Shing Wong
  • Publication number: 20150099336
    Abstract: Methods of manufacturing semiconductor integrated circuits having FinFET structures with epitaxially formed source and drain regions are disclosed. A method of fabricating an integrated circuit includes forming a plurality of silicon fin structures on a semiconductor substrate, epitaxially growing a silicon material on the fin structures, wherein a merged source/drain region is formed on the fin structures, and anisotropically etching at least one of the merged source drain regions to form an un-merged source/drain region.
    Type: Application
    Filed: December 15, 2014
    Publication date: April 9, 2015
    Inventors: Hoong Shing Wong, Min-hwa Chi
  • Patent number: 8946029
    Abstract: Methods of manufacturing semiconductor integrated circuits having FinFET structures with epitaxially formed source and drain regions are disclosed. For example, a method of fabricating an integrated circuit includes forming a plurality of silicon fin structures on a semiconductor substrate, forming disposable spacers on vertical sidewalls of the fin structures, and depositing a silicon oxide material over the fins and over the disposable spacers. The method further includes anisotropically etching at least one of the fin structures and the disposable spacers on the sidewalls of the at least one fin structure, thereby leaving a void in the silicon oxide material, and etching the silicon oxide material and the disposable spacers from at least one other of the fin structures, while leaving the at least one other fin structure un-etched. Still further, the method includes epitaxially growing a silicon material in the void and on the un-etched fin structure.
    Type: Grant
    Filed: November 12, 2012
    Date of Patent: February 3, 2015
    Assignee: GLOBALFOUNDRIES, Inc.
    Inventors: Hoong Shing Wong, Min-hwa Chi
  • Patent number: 8940650
    Abstract: A method of fabricating an integrated circuit includes the steps of providing a semiconductor substrate comprising a semiconductor device disposed thereon and depositing a first silicon nitride layer over the semiconductor substrate and over the semiconductor device using a first deposition process. The first deposition process is a plasma-enhanced chemical vapor deposition (PECVD) process that operates over a plurality of cycles, each cycle having a first time interval and a second time interval. The PECVD process includes the steps of generating a plasma with a power source during the first time interval, the plasma comprising reactive ionic and radical species of a silicon-providing gas and a nitrogen-providing gas, and discontinuing generating the plasma during the second time interval immediately subsequent to the first time interval. The method further includes depositing a second silicon nitride layer over the first silicon nitride layer after the plurality of cycles.
    Type: Grant
    Filed: March 6, 2013
    Date of Patent: January 27, 2015
    Assignee: GLOBALFOUNDRIES, Inc.
    Inventors: Huy Cao, Huang Liu, Hoong Shing Wong, Songkram Srivathanakul, Sandeep Gaan
  • Publication number: 20150021694
    Abstract: Integrated circuits having replacement metal gates with improved threshold voltage performance and methods for fabricating such integrated circuits are provided. A method includes providing a dielectric layer overlying a semiconductor substrate. The dielectric layer has a first and a second trench. A gate dielectric layer is formed in the first and second trench. A first barrier layer is formed overlying the gate dielectric layer. A work function material layer is formed within the trenches. The work function material layer and the first barrier layer are recessed in the first and second trench. The work function material layer and the first barrier layer form a chamfered surface. The gate dielectric layer is recessed in the first and second trench. A conductive gate electrode material is deposited such that it fills the first and second trench. The conductive gate electrode material is recessed in the first and second trench.
    Type: Application
    Filed: July 17, 2013
    Publication date: January 22, 2015
    Inventors: Kristina Trevino, Yuan-Hung Lin, Gabriel Padron Wells, Chang Ho Maeng, Taejoon Han, Hoong Shing Wong
  • Patent number: 8906768
    Abstract: For the formation of a stressor on one or more of a source and drain defined on a fin of FINFET semiconductor structure, a method can be employed including performing selective epitaxial growth (SEG) on one or more of the source and drain defined on the fin, separating the fin from a bulk silicon substrate at one or more of the source and drain, and further performing SEG on one or more of the source and drain to form a wrap around epitaxial growth stressor that stresses a channel connecting the source and drain. The formed stressor can be formed so that the epitaxial growth material defining a wrap around configuration connects to the bulk substrate. The formed stressor can increase mobility in a channel connecting the defined source and drain.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: December 9, 2014
    Assignee: GLOBALFOUNDRIES, Inc.
    Inventors: Hoong Shing Wong, Min-hwa Chi
  • Publication number: 20140319615
    Abstract: A semiconductor structure in fabrication includes a n-FinFET and p-FinFET. Stress inducing materials such as silicon and silicon germanium are epitaxially grown into naturally diamond-shaped structures atop the silicon fins of the n-FinFET and p-FinFET areas. The diamond structures act as the source, drain and channel between the source and drain. The diamond structures of the channel are selectively separated from the fin while retaining the fin connections of the diamond-shaped growth of the source and the drain. Further fabrication to complete the structure may then proceed.
    Type: Application
    Filed: April 26, 2013
    Publication date: October 30, 2014
    Applicant: GLOBAL FOUNDRIES, Inc.
    Inventors: Min-Hwa CHI, Hoong Shing WONG
  • Publication number: 20140264489
    Abstract: For the formation of a stressor on one or more of a source and drain defined on a fin of FINFET semiconductor structure, a method can be employed including performing selective epitaxial growth (SEG) on one or more of the source and drain defined on the fin, separating the fin from a bulk silicon substrate at one or more of the source and drain, and further performing SEG on one or more of the source and drain to form a wrap around epitaxial growth stressor that stresses a channel connecting the source and drain. The formed stressor can be formed so that the epitaxial growth material defining a wrap around configuration connects to the bulk substrate. The formed stressor can increase mobility in a channel connecting the defined source and drain.
    Type: Application
    Filed: March 15, 2013
    Publication date: September 18, 2014
    Applicant: GLOBALFOUNDRIES INC.
    Inventors: Hoong Shing WONG, Min-hwa CHI