Patents by Inventor Hoonmin Kim

Hoonmin Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12279427
    Abstract: A semiconductor device includes a substrate including cell and peripheral regions. Landing pads and contact plugs are on the cell and peripheral regions, respectively. A first filler pattern fills regions between the landing pads and between the contact plugs. Outer voids are in the first filler pattern and include first and second outer voids on the cell and peripheral regions, respectively. A second filler pattern covers the first filler pattern and the contact plugs and fills at least a portion of the second outer void. An inner void is in the second outer void and enclosed by the second filler pattern. The first and second filler patterns include the same material. On the cell region, at least a portion of the second filler pattern is located below top surfaces of the landing pads, and a bottom surface of the second filler pattern is partially exposed by the first outer void.
    Type: Grant
    Filed: May 23, 2022
    Date of Patent: April 15, 2025
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Na-Young Kim, Seongho Kim, Hoonmin Kim
  • Publication number: 20230171949
    Abstract: An upper electrode of an integrated circuit device includes a metal-containing conductive pattern disposed on a dielectric layer and that fills spaces between a plurality of lower electrodes and covers top surfaces of the plurality of lower electrodes, and a non-metal conductive pattern that includes a bottom surface in contact with a top surface of the metal-containing conductive pattern, and a top surface. The non-metal conductive pattern includes a lower non-metal conductive portion that includes a first top surface at a first height from the bottom surface, and an upper non-metal conductive portion that includes a second top surface at a second height from the bottom surface that is higher than the first height and that protrudes from the first top surface of the lower non-metal conductive portion away from the substrate. A difference between the second height and the first height is greater than the first height.
    Type: Application
    Filed: July 25, 2022
    Publication date: June 1, 2023
    Inventors: HONGKYU HWANG, NAYOUNG KIM, SEONGHO KIM, HOONMIN KIM, HYELIM HWANG
  • Publication number: 20230084281
    Abstract: A semiconductor device includes a substrate including cell and peripheral regions. Landing pads and contact plugs are on the cell and peripheral regions, respectively. A first filler pattern fills regions between the landing pads and between the contact plugs. Outer voids are in the first filler pattern and include first and second outer voids on the cell and peripheral regions, respectively. A second filler pattern covers the first filler pattern and the contact plugs and fills at least a portion of the second outer void. An inner void is in the second outer void and enclosed by the second filler pattern. The first and second filler patterns include the same material. On the cell region, at least a portion of the second filler pattern is located below top surfaces of the landing pads, and a bottom surface of the second filler pattern is partially exposed by the first outer void.
    Type: Application
    Filed: May 23, 2022
    Publication date: March 16, 2023
    Inventors: Na-Young Kim, Seongho Kim, Hoonmin Kim
  • Publication number: 20230034533
    Abstract: A semiconductor device may include lower electrodes on a substrate, a first upper support layer pattern on upper sidewalls of the lower electrodes, and a dielectric layer and an upper electrode on surfaces of the lower electrodes and the first upper support layer pattern. The lower electrodes may be in a honeycomb pattern with the lower electrodes are at vertexes and center of a hexagon. The first upper support layer pattern may be a first plate shape including openings exposing some of all the lower electrodes. The lower electrodes may form rows in a first direction, the rows arranged in a second direction perpendicular to the first direction. Each opening may expose portions of upper sidewalls of at least four lower electrodes in two adjacent rows. Each of the openings may have a longitudinal direction in the first direction. In semiconductor devices, defects from bending stresses may be decreased.
    Type: Application
    Filed: April 21, 2022
    Publication date: February 2, 2023
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Jongmin LEE, Hoonmin KIM
  • Patent number: 9552326
    Abstract: A cache system configured to provide a cache service includes a network switch and a cache device. The network switch is configured to route data associated with a plurality of servers. The cache device is disposed in association with the network switch. The cache device is configured to cache, in at least one memory available to the network switch, data published by the plurality of servers via the network switch. The cache device is also configured to transmit at least some of the cached data in response to a request received from at least one of the plurality of servers. The network switch provides the cache service via the cache device.
    Type: Grant
    Filed: March 12, 2013
    Date of Patent: January 24, 2017
    Assignee: NHN Corporation
    Inventors: Chang-Hyeon Song, Hoonmin Kim
  • Publication number: 20130254325
    Abstract: A cache system configured to provide a cache service includes a network switch and a cache device. The network switch is configured to route data associated with a plurality of servers. The cache device is disposed in association with the network switch. The cache device is configured to cache, in at least one memory available to the network switch, data published by the plurality of servers via the network switch. The cache device is also configured to transmit at least some of the cached data in response to a request received from at least one of the plurality of servers. The network switch provides the cache service via the cache device.
    Type: Application
    Filed: March 12, 2013
    Publication date: September 26, 2013
    Applicant: NHN Corporation
    Inventors: Chang-Hyeon Song, Hoonmin Kim