Patents by Inventor Horng-Jer Hsiue

Horng-Jer Hsiue has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for performing a pre-amorphization implant (PAI) which provides reduced resist protect oxide damage and reduced junction leakage
    Patent number: 6187655
    Abstract: The present invention provides a method for performing a pre-amorphization implant which reduces damage to the resist protect oxide layer and reduces leakage current between the gate and substrate. Two novel approaches are provided, both of which use a photoresist mask to protect the RPO from implant damage during PAI. In the first approach, the PAI is performed immediately after RPO etching to form contact openings. Thus the original photoresist mask is still on the RPO. In the second approach, the photoresist mask is re-formed prior to PAI to protect the RPO from implant damage.
    Type: Grant
    Filed: August 16, 1999
    Date of Patent: February 13, 2001
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Jiann-Jong Wang, Ding-Dar Hu, Horng-Jer Hsiue, Ching-Kunn Huang