Patents by Inventor Horng-Jye Sun

Horng-Jye Sun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4967169
    Abstract: A MMIC variable slope gain-equalizer varies the conductance of depletion mode Schottky gate FETs to controllably insert frequency dependent resonant members in a modified bridged-T configuration. Resistors connected from circuit input port to output port define the arms of the "T" and a T-node to which a first frequency dependent resonant member is connected in series with a first FET. A second FET and a second frequency dependent resonant member are each connected in series between the circuit ports, bridging the T. Preferably a third frequency dependent resonant member is series connected with the second frequency dependent member. Each frequency dependent resonant member resonates at about the highest frequency of interest, typically about 18 GHz. When the first FET is on and the second FET off, maximum attenuation at lower frequencies is inserted into the circuit, and when the first FET is off and the second FET on, minimum attenuation is inserted at lower frequencies.
    Type: Grant
    Filed: July 31, 1989
    Date of Patent: October 30, 1990
    Assignee: Teledyne MEC
    Inventors: Horng-Jye Sun, Bruce C. Morley
  • Patent number: 4890077
    Abstract: A MMIC variable att4enuator uses depletion mode Schottky gate FETS as variable conductance devices in a ".pi." configuration to vary attenuation as a function of a DC control voltage. Attenuation is flat within .+-.1 dB, VSWR is .ltoreq.2:1 throughout the operating frequency and control voltage range, and about 12 dB variable attenuation is provided. The ".pi." is formed by FETs in shunt to ground between attenuator input and output, and by a FET in series between input and output. Resistors and an inductor connected in parallel with the series FET extend attenuator bandwidth to 20 GHZ and improve attenuation linearity versus control voltage. A resistor in series with each shunt FET also improves linearity. The typically 0 to +3 VDC control voltage is applied to the FET gates and drain/source leads permitting attenuation control with a single control voltage.
    Type: Grant
    Filed: March 28, 1989
    Date of Patent: December 26, 1989
    Assignee: Teledyne MEC
    Inventor: Horng-Jye Sun