Abstract: Disclosed are a light-driven filtration antibacterial composite membrane and a preparation method and use thereof. The method for preparing the light-driven filtration antibacterial composite membrane includes: mixing dichloromethane and N,N-dimethylformamide to obtain a first solution; adding PCL particles to the first solution, and stirring until being uniform to obtain an electrospinning solution; adding a ZIF-8 powder to the electrospinning solution, and ultrasonically dispersing for at least 1 hour to obtain a PCL/ZIF-8 spinning solution; spraying the PCL/ZIF-8 spinning solution onto a PPCL@PDA/TAEG men-blown membrane to obtain the light-driven filtration antibacterial composite membrane.

Abstract: Disclosed herein are heterocyclic compounds that inhibit the activity of FLT3. Also described are specific irreversible inhibitors of FLT3. Also disclosed are pharmaceutical compositions that include the compounds. Methods of using the FLT3 inhibitors are disclosed, alone or in combination with other therapeutic agents, for the treatment of proliferative diseases or conditions, including hematological malignancies and other diseases or conditions dependent on FLT3 activity.

Abstract: A magnetic tunnel junction (MTJ) memory cell comprising a connection via structure, a bottom electrode disposed on the connection via structure, a memory material stack disposed on the bottom electrode, and a conductive contact structure disposed on the memory material stack, in which a bottom surface of the conductive contact structure is in direct contact with a memory material layer of the memory material stack.

Abstract: Disclosed herein are macrocyclic compounds that inhibit the binding of KRas. Also disclosed are pharmaceutical compositions that include the compounds. Methods of using the KRas inhibitors are disclosed, alone or in combination with other therapeutic agents, for the treatment of autoimmune diseases or conditions, heteroimmune diseases or conditions, cancer, including lymphoma, leukemia, lung cancer, colorectal cancer, pancreatic cancer, and other diseases or conditions dependent on KRas interaction.

Abstract: Semiconductor structures and methods are provided. An exemplary method includes receiving a structure comprising a metal feature, a first passivation structure over the metal feature, and a first opening extending through the first passivation structure and exposing the metal feature. The exemplary method also includes forming a conductive layer in the first opening; forming a second passivation structure over the conductive layer, performing a first etching process to form a second opening extending through the second passivation structure and exposing the conductive layer, performing a second etching process to selectively remove an upper portion of the second passivation structure to enlarge an upper portion of the second opening, and after the performing of the second etching process, forming a conductive feature in the second opening.

Abstract: Disclosed is a manufacturing method of a lithium-ion capacitor, comprising a positive electrode production step of mixing a lithium-rich material, activated carbon, a conductive additive and a aqueous adhesive to form a slurry by using water as a solvent, and then applying the slurry to a carbon-coated aluminum foil to form a positive electrode sheet; a negative electrode production step of mixing a negative electrode material, a conductive additive and a aqueous adhesive to form a slurry by using water as a solvent, and then applying the slurry to a copper foil to form a negative electrode sheet; and an assemble step of assembling the positive electrode sheet, the negative electrode sheet, an electrolyte and a separator into a capacitor without pre-lithiation.

Abstract: A magnetic tunnel junction (MTJ) memory cell comprising a connection via structure, a bottom electrode disposed on the connection via structure, a memory material stack disposed on the bottom electrode, and a conductive contact structure disposed on the memory material stack, in which a bottom surface of the conductive contact structure is in direct contact with a memory material layer of the memory material stack.

Abstract: A method includes providing a workpiece. The workpiece includes a substrate, a first dielectric layer over the substrate, a lower contact feature vertically extending through the first dielectric layer, a second dielectric layer over the lower contact feature and the first dielectric layer, a third dielectric layer over the second dielectric layer, a metal-insulator-metal (MIM) structure over the third dielectric layer, and a fourth dielectric layer over the MIM structure. The method further includes performing a first etch process to form an opening through the fourth dielectric layer to expose the MIM structure; performing a second etch process to extend the opening through the MIM structure to expose the third dielectric layer; performing a third etch process to further extend the opening into the third dielectric layer; and performing a fourth etch process to further extend the opening through the second dielectric layer to expose the lower contact feature.

Abstract: Disclosed herein are heterocyclic compounds that inhibit the binding of KRas. Also disclosed are pharmaceutical compositions that include the compounds. Methods of using the KRas inhibitors are disclosed, alone or in combination with other therapeutic agents, for the treatment of autoimmune diseases or conditions, heteroimmune diseases or conditions, cancer, including lymphoma, leukemia, lung cancer, colorectal cancer, pancreatic cancer, and other diseases or conditions dependent on KRas interaction.

Abstract: The application relates to a dextran affinity tag and use thereof. The present application provides an affinity tag, which is a segment of dextran binding domain, and can purify a target protein by its affinity with the dextran. The affinity tag of the present application has the advantages of more efficient in preparation and purification, and can be widely used in industrial applications that require protein purification processes.

Abstract: An economy class (Y class) private suite includes a continuous seatback and a stowable aisle-side panel. The continuous seatback covers the gaps between seats of a 3-seat or 4-seat PAX and the stowable aisle-side panel slides to close off the PAX from the aisle when desirable. Each seat in the PAX includes an extension element to extend from the anterior surface of the seat cushion and establish a substantially flat surface including the seat cushions and extension elements. A separate padded element may be placed over the substantially flat surface. Each seatback cushion in the PAX is removable and reconfigurable as a reclining support or expanded armrest.

Abstract: Described herein is N-[4-[4-(4-morpholinyl)-7H-pyrrolo[2,3-d]pyrimidin-6-yl]phenyl]-4-[[3(R)-[(1-oxo-2-propen-1-yl)amino]-1-piperidinyl]methyl]-2-pyridinecarboxamide, including crystalline forms, solvates, and pharmaceutically acceptable salts thereof. Also disclosed are pharmaceutical compositions that include the compound, as well as methods of using the compound, alone or in combination with other therapeutic agents, for the treatment of autoimmune diseases or conditions, heteroimmune diseases or conditions, cancer, including lymphoma, and inflammatory diseases or conditions.

Abstract: A method for fabricating magnetic tunnel junction (MTJ) pillars is provided. The method includes following operations. A MTJ stack of layers including a first magnetic layer, a tunnel barrier layer overlying the first magnetic layer, and a second magnetic layer overlying the tunnel barrier layer is provided. A first patterning step is carried out by using a reactive ion etching. In the first patterning step, the second magnetic layer and the tunnel barrier layer are etched to form one or more pillar structures and a protection layer is formed and covers sidewalls of the pillar structures.

Abstract: Disclosed herein are heterocyclic compounds that inhibit the activity of FLT3. Also described are specific covalent inhibitors of FLT3. Also disclosed are pharmaceutical compositions that include the compounds. Methods of using the FLT3 inhibitors are disclosed, alone or in combination with other therapeutic agents, for the treatment of proliferative diseases or conditions, including hematological malignancies and other diseases or conditions dependent on FLT3 activity.

Abstract: A method includes: providing a passivation layer with an embedded MIM capacitor; forming a redistribution layer (RDL) above the passivation layer; and forming an opening in the RDL above the MIM capacitor, wherein the opening separates the RDL into first and second RDL structures, wherein each of the first and second RDL structures has a convex-shaped profile on a sidewall that defines the opening that separates the first RDL structure from the second RDL structure, and wherein the convex-shaped profile on the sidewalls resists stress migration from the RDL to the MIM capacitor to resist stress migration induced cracks forming in the MIM capacitor. The forming an opening includes: removing a portion of the RDL to a first depth using first etching operations; and removing a portion of the RDL to a second depth by laterally etching sidewalls of the first and second RDL structures.

Abstract: Described herein is N-[4-[4-(4-morpholinyl)-7H-pyrrolo[2,3-d]pyrimidin-6-yl]phenyl]-4-[[3(R)-[(1-oxo-2-propen-1-yl)amino]-1-piperidinyl]methyl]-2-pyridinecarboxamide (I) including crystalline forms, solvates, and pharmaceutically acceptable salts thereof. Also disclosed are pharmaceutical compositions that include compound (I), as well as methods of using compound (I), alone or in combination with other therapeutic agents, for the treatment of autoimmune diseases or conditions, heteroimmune diseases or conditions, cancer, including lymphoma, and inflammatory diseases or conditions.

Abstract: Disclosed herein are heterocyclic compounds, for example, according to the following formula and analogs thereof: that inhibit the activity of FLT3. Also described are specific covalent inhibitors of FLT3. Also disclosed are pharmaceutical compositions that include the compounds. Methods of using the FLT3 inhibitors are disclosed, alone or in combination with other therapeutic agents, for the treatment of proliferative diseases or conditions, including hematological malignancies and other diseases or conditions dependent on FLT3 activity.

Abstract: A closed gas circulation system may include a sealed plenum, circulation fans, and a fan filter unit (FFU) inlet to contain, filter, condition, and re-circulate a gas through a chamber of an interface tool. The gas provided to the chamber is maintained in a conditioned environment in the closed gas circulation system as opposed to introducing external air into the chamber through the FFU inlet. This enables precise control over the relative humidity and oxygen concentration of the gas used in the chamber, which reduces the oxidation of semiconductor wafers that are transferred through the chamber. The closed gas circulation system may also include an air-flow rectifier, a return vent, and one or more vacuum pumps to form a downflow of collimated gas in the chamber and to automatically control the feed-forward pressure and flow of gas through the chamber and the sealed plenum.

Abstract: A closed gas circulation system may include a sealed plenum, circulation fans, and a fan filter unit (FFU) inlet to contain, filter, condition, and re-circulate a gas through a chamber of an interface tool. The gas provided to the chamber is maintained in a conditioned environment in the closed gas circulation system as opposed to introducing external air into the chamber through the FFU inlet. This enables precise control over the relative humidity and oxygen concentration of the gas used in the chamber, which reduces the oxidation of semiconductor wafers that are transferred through the chamber. The closed gas circulation system may also include an air-flow rectifier, a return vent, and one or more vacuum pumps to form a downflow of collimated gas in the chamber and to automatically control the feed-forward pressure and flow of gas through the chamber and the sealed plenum.

Abstract: A method for fabricating magnetic tunnel junction (MTJ) pillars is provided. The method includes following operations. A MTJ stack of layers including a first magnetic layer, a tunnel barrier layer overlying the first magnetic layer, and a second magnetic layer overlying the tunnel barrier layer is provided. A first patterning step is carried out by using a reactive ion etching. In the first patterning step, the second magnetic layer and the tunnel barrier layer are etched to form one or more pillar structures and a protection layer is formed and covers sidewalls of the pillar structures.