Abstract: A crucible for semiconductor technology purposes, especially for the production of silicon crystals, comprising an outer layer portion or layer of silicon dioxide, especially an outer made from granular natural quartz, and an inner lining made from synthetic crystalline quartz is described. The inner lining has on its interior surface a thin amorphous layer suitably made by heating a synthetic quartz layer disposed over a granular natural quartz layer at a sufficient temperature for a sufficient period of time to convert at least a portion of the synthetic crystalline quartz to the amorphous state.

Abstract: A crucible of pure transparent silica glass or pure translucent or opaque silica glass for the production of monocrystals used in making semiconductor elements which includes a hollow cylindrical part and a welded-on head. The head end of the hollow cylindrical part is formed from a tube with a head margin portion constricted towards the tube axis which is formed by shaping one end of the tube. A plate is welded into the aperture formed by the constricted head margin portion and has an area equal to at least one-tenth and at most four-fifths of the total head area made up by the head margin portion and the head.