Abstract: The present invention refers to a method of preparing a high density interconnect printed circuit board (HDI PCB) or IC substrates including through-holes and/or grate structures filled with copper, which comprises the steps of: a) providing a multi-layer substrate; b) forming a non-copper conductive layer or a copper layer on the cover layer and on an inner surface of the through-hole, respectively on an inner surface of the grate structure; c) forming a patterned masking film; d) electrodepositing copper; e) removing the masking film; and f) electrodepositing a copper filling.

Abstract: A device for gripping a workpiece (2) and electrically contacting at least one surface of the workpiece (2) comprises a first member (9;44;82;120;155) extending between a first end (12;47;85;123;158) and a second end (13;48;86;124;159) and a second member (8;43;81;119;154) extending between a first end (10;45;83;121;156) and a second end (11;46;84;122;157) and movably journalled with respect to the first member (9;44;82;120;155) to allow the workpiece (2) to be inserted between the respective first ends (10,12;45,47;83,85;121,123;156,158) and held between the first and second members (8,9;43,44;81,82;119,120;154,155) at respective clamping locations that are closer to the first ends (10,12;45,47;83,85;121,123;156,158) than to the second ends (11,13;46,48;84,86;122,124;157,159) along the extents of the first and second members (8,9;43,44;81,82;119,120;154,155).

Abstract: The present invention refers to a method of preparing a high density interconnect printed circuit board (HDI PCB) or IC substrates including through-holes and/or grate structures filled with copper, which comprises the steps of: a) providing a multi-layer substrate; b) forming a non-copper conductive layer or a copper layer on the cover layer and on an inner surface of the through-hole, respectively on an inner surface of the grate structure; c) forming a patterned masking film; d) electrodepositing copper; e) removing the masking film; and f) electrodepositing a copper filling.

Abstract: The present invention refers to a method of preparing a high density interconnect printed circuit board (HDI PCB) including microvias filled with copper comprising the steps of: a1) providing a multi-layer substrate comprising (i) a stack assembly of an electrically conductive interlayer embedded between two insulating layers, (ii) a cover layer, and (iii) a microvia extending from the peripheral surface and ending on the conductive interlayer; b1) depositing a conductive layer; or a2) providing a multi-layer substrate comprising (i) a stack assembly of an electrically conductive interlayer embedded between two insulating layers, (ii) a microvia extending from the peripheral surface and ending on the conductive interlayer; b2) depositing a conductive layer; and c) electrodepositing a copper filling in the microvia and a first copper layer on the conductive layer which form together a planar surface and the thickness of the first copper layer is from 0.1 to 3 ?m.

Abstract: The present invention refers to a method of preparing a high density interconnect printed circuit board (HDI PCB) including microvias filled with copper comprising the steps of: a1) providing a multi-layer substrate comprising (i) a stack assembly of an electrically conductive interlayer embedded between two insulating layers, (ii) a cover layer, and (iii) a microvia extending from the peripheral surface and ending on the conductive interlayer; b1) depositing a conductive layer; or a2) providing a multi-layer substrate comprising (i) a stack assembly of an electrically conductive interlayer embedded between two insulating layers, (ii) a microvia extending from the peripheral surface and ending on the conductive interlayer; b2) depositing a conductive layer; and c) electrodepositing a copper filling in the microvia and a first copper layer on the conductive layer which form together a planar surface and the thickness of the first copper layer is from 0.1 to 3 ?m.

Abstract: The present invention refers to a method of preparing a high density interconnect printed circuit board (HDI PCB) or IC substrates including through-holes and/or grate structures filled with copper, which comprises the steps of: a) providing a multi-layer substrate; b) forming a non-copper conductive layer or a copper layer on the cover layer and on an inner surface of the through-hole, respectively on an inner surface of the grate structure; c) forming a patterned masking film; d) electrodepositing copper; e) removing the masking film; and f) electrodepositing a copper filling.

Abstract: Method for electroplating a metal onto a flat substrate P. Surfaces are electrically polarized for metal deposition by feeding thereto at least one first and second forward-reverse pulse current sequences. The first forward-reverse pulse current sequence includes a first forward pulse generating a first cathodic current during a first forward pulse duration tf1 and having a first forward pulse peak current if1, and a first reverse pulse generating a first anodic current during a first reverse pulse duration tr1 and having a first reverse pulse peak current ir1, the second forward-reverse pulse current sequence including a second forward pulse generating a second cathodic current during a second forward pulse duration tf2 and having a second forward pulse peak current if2, and a second reverse pulse generating a second anodic current during a second reverse pulse duration tr2, the second reverse pulse having a second reverse pulse peak current ir2.

Abstract: Method for electroplating a metal onto a flat substrate P. Surfaces are electrically polarized for metal deposition by feeding thereto at least one first and second forward-reverse pulse current sequences. The first forward-reverse pulse current sequence includes a first forward pulse generating a first cathodic current during a first forward pulse duration tf1 and having a first forward pulse peak current if1, and a first reverse pulse generating a first anodic current during a first reverse pulse duration tr1 and having a first reverse pulse peak current ir1, the second forward-reverse pulse current sequence including a second forward pulse generating a second cathodic current during a second forward pulse duration tf2 and having a second forward pulse peak current if2, and a second reverse pulse generating a second anodic current during a second reverse pulse duration tr2, the second reverse pulse having a second reverse pulse peak current ir2.

Abstract: Method for electroplating a metal onto a flat substrate P. Surfaces are electrically polarized for metal deposition by feeding thereto at least one first and second forward-reverse pulse current sequences. The first forward-reverse pulse current sequence includes a first forward pulse generating a first cathodic current during a first forward pulse duration tf1 and having a first forward pulse peak current if1, and a first reverse pulse generating a first anodic current during a first reverse pulse duration tr1 and having a first reverse pulse peak current ir1, the second forward-reverse pulse current sequence including a second forward pulse generating a second cathodic current during a second forward pulse duration tf2 and having a second forward pulse peak current if2, and a second reverse pulse generating a second anodic current during a second reverse pulse duration tr2, the second reverse pulse having a second reverse pulse peak current ir2.

Abstract: Method for electroplating a metal onto a flat substrate P. Surfaces are electrically polarized for metal deposition by feeding thereto at least one first and second forward-reverse pulse current sequences. The first forward-reverse pulse current sequence includes a first forward pulse generating a first cathodic current during a first forward pulse duration tf1 and having a first forward pulse peak current if1, and a first reverse pulse generating a first anodic current during a first reverse pulse duration tr1 and having a first reverse pulse peak current ir1, the second forward-reverse pulse current sequence including a second forward pulse generating a second cathodic current during a second forward pulse duration tf2 and having a second forward pulse peak current if2, and a second reverse pulse generating a second anodic current during a second reverse pulse duration tr2, the second reverse pulse having a second reverse pulse peak current ir2.