Abstract: A method for manufacturing pressure sensing elements which have a metal membrane and a resistive thin film arranged thereon, in which a blind opening is introduced into a base element, and the resistive thin film is applied on a side of the base element facing away from the blind opening. Provision is made for a plurality of pressure sensing elements to be manufactured simultaneously in one panel, and after application of the resistive thin film onto the panel, the panel is sectioned to yield the pressure sensing elements.

Abstract: A method for producing acceleration sensors is proposed, in which a silicon layer that is deposited in an epitaxial application system is used. Above sacrificial layers (2) applied to the substrate (1), the material grows in the form of a polysilicon layer (6), which has a certain surface roughness. By application of a photoresist and by a wet etching process, this surface roughness is eliminated. Alternatively, chemical-mechanical smoothing is contemplated.

Abstract: Structures of high resolution in the near UV range and of high sharpness of edge and steepness of edge can be obtained by means of positive photoresists containing, in an organic solvent, in each case essentially at least(a) an alkali-soluble resin(b) a 1,2-naphthoquinone-diazide-5-sulfonyl ester of a trihydroxybenzene isomer(c) an aromatic hydroxy compoundand also, if appropriate, further customary additives, and in which the result of component (b) is to give an absorption coefficient of at least 0.5 .mu.m.sup.-1 for the photobleachable absorption, and component (c) is present in a concentration of 15-30% by weight, relative to the total solids content.

Abstract: Positive-working photoresist compositions containing 23-27%, based on said composition, of at least one compound of formula (I) ##STR1## wherein one of the substituents X is hydrogen or a group of formula II ##STR2## and the other substituents X are a group of formula II; and 6-11%, based on said composition, of at least one polyhydroxy compound of formula III ##STR3## wherein X is a direct bond, --O--, --S--, --SO.sub.2 --, --CO-- or C(R.sub.6 (R.sub.7)--, and R.sub.1, R.sub.2, R.sub.3, R.sub.4 and R.sub.5 are each independently of the other hydrogen, halogen, C.sub.1 -C.sub.4 alkyl, C.sub.1 -C.sub.4 alkoxy or hydroxy, and R.sub.6 and R.sub.7 are each independently of the other hydrogen, --CH.sub.3 or --CF.sub.3.These compositions have particularly good profile contrast and exhibit insignificant fluctuations in line width.

Abstract: The invention relates to positive photoresists based on alkali-soluble phenolic resin and photosensitive quinonediazide compounds which, by means of particular additives, give relief structures produced therewith an increased stability towards changes due to thermal effects.

Abstract: Structures of high resolution in the near UV range and of high sharpness of edge and steepness of edge can be obtained by means of positive photoresists containing, in an organic solvent, in each case essentially at least(a) an alkali-soluble resin(b) a 1,2-naphthoquinone-diazide-5-sulfonyl ester of a trihydroxybenzene isomer(c) an aromatic hydroxy compoundand also, if appropriate, further customary additives, and in which the result of component (b) is to give an absorption coefficient of at least 0.5 .mu.m.sup.-1 for the photobleachable absorption, and component (c) is present in a concentration of 15-30% by weight, relative to the total solids content.