Abstract: A conditioning disk replacement apparatus includes; a detacher configured to separate a conditioning disk from to a holder, a transfer part configured to transfer the conditioning disk, and a container configured to store the conditioning disk. The detacher includes a detachment body and a rotary part coupled to the detachment body, the rotary part includes a key protruding outward from the rotary part in a first horizontal direction, and the rotary part is configured to rotate about a central axis extending in the first horizontal direction.

Abstract: A pad conditioner comprising: a disk holder that is rotatable; a frame on the disk holder; a lifting and lowering support member that is between the frame and the disk holder; a posture adjusting member that is between the lifting and lowering support member and the frame and has a thickness, wherein the posture adjusting member is capable of varying the thickness; a posture sensor that is configured to detect a height of the lifting and lowering support member; and a controller that is configured to vary the thickness of the posture adjusting member according to a signal received from the posture sensor.

Abstract: A polishing head of a CMP apparatus may include a head block, a distribution block and a segmentation type head module. The head block may configured to be positioned over a substrate. The distribution block may be rotatably connected to a lower surface of the head block with respect to a vertical direction. A plurality of pressure lines may be connected to the distribution block and configured to flow a working fluid therethrough. The segmentation type head module may be connected to the lower surface of the distribution block. The segmentation type head module may be configured to rotate with respect to the vertical direction together with the distribution block. The segmentation type head module may be configured to locally pressurize the substrate using the working fluid provided through the pressure lines.

Abstract: A conditioning disk replacement apparatus includes; a detacher configured to separate a conditioning disk from to a holder, a transfer part configured to transfer the conditioning disk, and a container configured to store the conditioning disk. The detacher includes a detachment body and a rotary part coupled to the detachment body, the rotary part includes a key protruding outward from the rotary part in a first horizontal direction, and the rotary part is configured to rotate about a central axis extending in the first horizontal direction.

Abstract: A wafer processing method includes supplying a first process gas into a wafer processing apparatus, lowering a temperature of the wafer, generating plasma using the first process gas, supplying a second process gas and mixing the second process gas with the plasma, performing a plasma process on the wafer using the plasma and the second process gas, and performing an annealing process on the wafer on which the plasma process has been performed. The lowering of the temperature of the wafer includes increasing an internal pressure of the wafer processing apparatus.

Abstract: A conditioning apparatus includes an arm configured to be rotated by an actuator, a gimbaling part disposed at one end of the arm and disposed such that a lower end thereof protrudes outwardly of the arm and an abrasive disc is installed thereon, a frame unit connected to the gimbaling part, a rotation driving unit connected to the gimbaling part and configured to transfer driving force for rotating the abrasive disc, a load applying unit connected to the frame unit and configured to elevate the frame unit, and a universal joint connecting the gimbaling part to the rotation driving unit, wherein the universal joint separates a center of gravity of the rotation driving unit from a center of gravity of the gimbaling part.

Abstract: A cleaner for a CMP apparatus includes a cleaning body, a plurality of cleaning nozzles, a vision system and a controller. The cleaning body may be arranged under a polishing head of the CMP apparatus configured to hold a substrate. The cleaning body may be configured to receive a cleaning solution for cleaning the polishing head. The cleaning nozzles may be arranged at the cleaning body to inject the cleaning solutions to the polishing head. The vision system may photograph the polishing head to which the cleaning solution may be injected to obtain an image of the polishing head. The controller may individually control amounts of the cleaning solutions injected from the cleaning nozzles based on the image of the polishing head. Thus, a scratch caused by a defect may not be generated at the substrate.

Abstract: A wafer processing method includes supplying a first process gas into a wafer processing apparatus, lowering a temperature of the wafer, generating plasma using the first process gas, supplying a second process gas and mixing the second process gas with the plasma, performing a plasma process on the wafer using the plasma and the second process gas, and performing an annealing process on the wafer on which the plasma process has been performed. The lowering of the temperature of the wafer includes increasing an internal pressure of the wafer processing apparatus.

Abstract: A conditioning disk replacement apparatus includes; a detacher configured to separate a conditioning disk from to a holder, a transfer part configured to transfer the conditioning disk, and a container configured to store the conditioning disk. The detacher includes a detachment body and a rotary part coupled to the detachment body, the rotary part includes a key protruding outward from the rotary part in a first horizontal direction, and the rotary part is configured to rotate about a central axis extending in the first horizontal direction.

Abstract: A wafer processing method includes supplying a first process gas into a wafer processing apparatus, lowering a temperature of the wafer, generating plasma using the first process gas, supplying a second process gas and mixing the second process gas with the plasma, performing a plasma process on the wafer using the plasma and the second process gas, and performing an annealing process on the wafer on which the plasma process has been performed. The lowering of the temperature of the wafer includes increasing an internal pressure of the wafer processing apparatus.

Abstract: Disclosed are a method for cleaning a substrate, an apparatus for cleaning a substrate, and a method for fabricating a semiconductor device using the same. The method may include cleaning a substrate in a wet process, providing a supercritical fluid onto the substrate to remove moisture from the substrate, and cleaning the substrate in a dry process to remove defect particles from a substrate, which are produced by the supercritical fluid.

Abstract: Disclosed are a method for cleaning a substrate, an apparatus for cleaning a substrate, and a method for fabricating a semiconductor device using the same. The method may include cleaning a substrate in a wet process, providing a supercritical fluid onto the substrate to remove moisture from the substrate, and cleaning the substrate in a dry process to remove defect particles from a substrate, which are produced by the supercritical fluid.

Abstract: The present invention relates to a spark discharge generator. The spark discharge system of the present invention includes a plurality of columnar electrodes and a ground plate having a plurality of outlet holes at positions corresponding to the columnar electrodes. The use of the spark discharge generator enables the production of a three-dimensionally shaped nanostructure array on a large area in a uniform and rapid manner.

Abstract: The present invention relates to a process for preparing an electronic device comprising at least one layer selected from the group consisting of a upper electrode layer, a lower electrode layer, an organic layer and an inorganic layer, which comprises a step of introducing a nanoparticle layer or a nano/micro structure layer by adhering charged nanoparticles, before, after or during forming the layer.

Abstract: The present invention relates to a process for producing a 3-dimensional structure assembled from nanoparticles by using a mask having a pattern of perforations, which comprises the steps of: in a grounded reactor, placing a mask having a pattern of perforations corresponding to a determined pattern at a certain distance above a substrate to be patterned, and then applying voltage to the substrate to form an electrodynamic focusing lens; and introducing charged nanoparticles into the reactor, the charged particles being guided to the substrate through the pattern of perforations so as to be selectively attached to the substrate with 3-dimensional shape. According to the process of the present invention, a 3-dimensional structure of various shapes can be produced without producing noise pattern, with high accuracy and high efficiency.

Abstract: The present invention relates to a spark discharge generator. The spark discharge system of the present invention includes a plurality of columnar electrodes and a ground plate having a plurality of outlet holes at positions corresponding to the columnar electrodes. The use of the spark discharge generator enables the production of a three-dimensionally shaped nanostructure array on a large area in a uniform and rapid manner.

Abstract: The present invention relates to a method for manufacturing a nanoparticle structure by focused patterning of nanoparticles, and a nanoparticle structure obtained by the above method. The method of the present invention is characterized by comprising the steps of: first of all, accumulating ions generated by corona discharge on a substrate where a micro/nano pattern is formed; inducing charged nanoparticles and ions generated by spark discharge to the micro/nano pattern of the substrate; and then focused depositing on the micro/nano pattern. According to the method of the present invention, an elaborate nanoparticle structure, which has 3-dimensional shape having complicated structure, can be effectively manufactured.

Abstract: The present invention relates to a process for producing a 3-dimensional structure assembled from nanoparticles by using a mask having a pattern of perforations, which comprises the steps of: in a grounded reactor, placing a mask having a pattern of perforations corresponding to a determined pattern at a certain distance above a substrate to be patterned, and then applying voltage to the substrate to form an electrodynamic focusing lens; and introducing charged nanoparticles into the reactor, the charged particles being guided to the substrate through the pattern of perforations so as to be selectively attached to the substrate with 3-dimensional shape. According to the process of the present invention, a 3-dimensional structure of various shapes can be produced without producing noise pattern, with high accuracy and high efficiency.

Abstract: The present invention relates to a process for preparing an electronic device comprising at least one layer selected from the group consisting of a upper electrode layer, a lower electrode layer, an organic layer and an inorganic layer, which comprises a step of introducing a nanoparticle layer or a nano/micro structure layer by adhering charged nanoparticles, before, after or during forming the layer.