Abstract: To measure the channel quality of the own cell accurately in a condition where there is no interference from a neighbor cell. A wireless communication terminal according to the invention is a wireless communication terminal to be connected to a base station for transmitting and receiving data to/from the base station, the wireless communication terminal including: a receiver that receives a signal which includes control information provided for measuring a channel quality of own cell from the base station; an extractor that extracts the control information from the signal received by the receiver; a measurement section that measures, on the basis of the control information, the channel quality of the own cell in a domain where a neighbor cell does not transmit a signal; and a transmitter that transmits a measurement result of the channel quality of the own cell measured by the measurement section, to the base station.

Abstract: A wafer inspection apparatus includes a first and second wafer transfer mechanisms, an alignment chamber, a second wafer transfer mechanism and a plurality of inspection chambers. The first wafer transfer mechanism is installed at a first transfer area to transfer wafers individually from a housing. The alignment chamber has an alignment mechanism configured to align the wafer at an inspection position for an electrical characteristics inspection. The second wafer transfer mechanism is configured to transfer the wafer through a wafer retaining support in a second transfer area formed along the first transfer area and an alignment area. The plurality of inspection chambers is arranged at an inspection area formed along the second transfer area and is configured to inspect electrical characteristics of the wafer transferred by the second wafer transfer mechanism through the wafer retaining support.

Abstract: A wireless communication apparatus capable of minimizing the degradation in separation characteristic of a code multiplexed response signal. In this apparatus, a control part (209) controls both a AC sequence to be used in a primary spreading in a spreading part (214) and a Walsh sequence to be used in a secondary spreading in a spreading part (217) so as to allow a very small circular shift interval of the ZC sequence to absorb the interference components remaining in the response signal; the spreading part (214) uses the ZC sequence set by the control part (209) to primary spread the response signal; and the spreading part (217) uses the Walsh sequence set by the control part (209) to secondary spread the response signal to which CP has been added.

Abstract: A liquid crystal display device including a pair of substrates sandwiching liquid crystal molecules, a plurality of gate bus lines, and a plurality of data bus lines, with each of the data bus lines extending to intersect the gate bus lines and bending in a zigzag manner. A plurality of pixels are formed in areas enclosed by the data and gate bus lines, with a plurality of pixel electrodes, each covering a substantial area of one of the pixels. A plurality of domain regulating structures for regulating orientation directions of the liquid crystal molecules and for forming multiple domains are formed in each of the pixels. At least one of the domain regulating structures bends along a first side edge of the pixel electrode and domains are divided in accordance with the bending of the domain regulating structure.

Abstract: A semiconductor manufacturing method comprising, a data generating process including, acquiring a simulation light pattern that simulates a shape of a light exposure pattern formed on a substrate on the basis of design data of a semiconductor device, acquiring a simulation electron beam exposure pattern that simulates a shape of an electron beam exposure pattern formed by an electron beam exposure on the substrate on the basis of the design data, extracting difference information representing a shape difference portion between the simulation light pattern and the simulation electron beam exposure pattern, acquiring changed design data for modifying shape by changing the design data in accordance with the difference information, conducting the electron beam exposure on the substrate by use of the changed design data for modifying the shape.

Abstract: In order to realize a wider bandwidth of a frequency characteristic of a power amplification circuit, outputs of differential push-pull amplifiers which are matched at respectively different frequencies are combined together by secondary inductors, and the combined signal is outputted.

Abstract: An electronic apparatus includes: a first casing; a second casing; a hinge section which includes a first turning shaft provided at one end portion of the first casing and a second turning shaft provided at one end portion of the second casing and connects the first and second casings so as to be able to be opened or closed in a range from a folded state to a back-to-back state through the first and second turning shafts; a display section provided on one face of the second casing; and a displacement section which displaces the display section to the other end side of the second casing in the folded state and the back-to-back state of the first and second casings and displaces the display section to one end side of the second casing in a spread state of the first and second casings.

Abstract: The present invention relates to the production of recombinant microorganisms, in particular of the genus Gluconobacter, for production of 2-keto-L-gulonic acid (2-KGA) and/or L-ascorbic acid (hereinafter also referred to as Vitamin C), wherein the microorganism has been modified to overexpress L-sorbose dehydrogenase (SDH). This overexpression has been achieved by introducing of one or more copies of a polynucleotide encoding SDH into the genome of the host microorganism resulting in enhanced yield, production, and/or efficiency of 2-KGA production and/or Vitamin C compared to a non-modified microorganism. Expression of said one or more extra-copies of sdh is dependent on the integration site. The invention also relates to genetically engineered microorganisms and their use for the production of 2-KGA and/or Vitamin C.

Abstract: The CMOS image sensor according to the present invention includes a sample hold section 3A1 for retaining an analog input signal voltage and a ramp wave signal voltage; and a comparing section 3A2 for taking an output from the sample hold section 3A1 as an input to compare it with a reverse level of itself, in which the sample hold section 3A1 applies a stabilization promoting voltage to a terminal of the sampling capacitance element so that an electric potential level of the terminal of the sampling capacitance element is promoted to become stabilized at a predetermined voltage, when the analog input signal is applied to the terminal of the sampling capacitance element.

Abstract: A driving apparatus includes a driving unit, a driven unit driven by the driving unit, a driving control unit configured to control the driving unit by performing feed-forward control based on feed-forward target data determined in advance to reduce a speed change of the driven unit. The speed change of the driven unit is expressed substantially as a positive half cycle of a sinusoidal waveform having an amplitude and a time duration, and the feed-forward target data is calculated from the amplitude and the time duration to represent a rectangular waveform approximating the positive half cycle of the sinusoidal waveform.

Abstract: Provided is a two-dimensional photonic crystal surface emitting laser which can suppress light leaking outside in an in-plane direction of the two-dimensional photonic crystal and an absorption loss in an active layer caused by the latter layer serving as an absorbing layer without contributing to light emission, and can improve light use efficiency. The surface emitting laser has a laminated structure in which an active layer and a photonic crystal layer are laminated in a vertical direction, has a resonance mode in an in-plane direction of the photonic crystal, and light is extracted in a vertical direction to a surface of the photonic crystal, wherein the laminated structure has a multi-refractive index layer including a central region made of a high refractive index medium and a peripheral portion made of a low refractive index medium with a lower refractive index than that of the high refractive index medium.

Abstract: The invention improves the performance of a semiconductor device. A metal silicide film is formed by a silicide process on a gate electrode and an n+-type source region of an LDMOSFET, and no such metal silicide film is formed on an n?-type offset drain region, an n-type offset drain region, and an n+-type drain region. A side wall spacer comprising a silicon film is formed via an insulating film on the side wall of the gate electrode over the drain side thereof, and a field plate electrode is formed by this side wall spacer. The field plate electrode does not extend above the gate electrode, and a metal silicide film is formed over the entire upper surface of the gate electrode in the silicide process.

Abstract: A manufacturing method of a microstructure which enables production of a deep and narrow microstructure in a GaN semiconductor with high precision is provided. The manufacturing method of a microstructure for forming a microscopic structure in a semiconductor has a configuration having a first step of forming a first GaN semiconductor layer on a substrate, a second step of forming a first hole by using etching on the first GaN semiconductor layer formed in the first narrow, and a third step of performing heat-treatment at a temperature from 850° C. to 950° C. inclusive under a gas atmosphere including nitrogen, in order to form a second narrow in which a diameter of the first hole h formed in the second step is made narrower than the diameter of the first hole in an in-plane direction of the substrate.

Abstract: A recording apparatus includes a conveying unit configured to convey a continuous sheet, a recording processing unit configured to eject liquid to the continuous sheet to record an image and plural maintenance patterns, a recording detection unit provided at the downstream side from the recording processing unit in the conveying direction of the continuous sheet and configured to check the maintenance patterns recorded on the continuous sheet, a cutter unit provided at the downstream side from the recording processing unit in the conveying direction and configured to cut the continuous sheet into respective sheet units to form a cut sheet, plural discharge units configured to discharge the cut sheet, a discharge unit changeover unit configured to change the plural discharge units such that the cut sheet is discharged onto any one of the plural discharge units, and a detection unit configured to detect a conveyance failure of the continuous sheet, the recording apparatus further including a control unit config

Abstract: The present invention provides a refrigerating machine oil, a compressor oil composition, a hydraulic oil composition, a metalworking oil composition, a heat treating oil composition, a lubricating oil composition for machine tools and a lubricating oil composition which comprise a lubricating oil base oil having % CA of not more than 2, % CP/% CN of not less than 6 and an iodine value of not more than 2.5.

Abstract: The present invention provides a refrigerating machine oil, a compressor oil composition, a hydraulic oil composition, a metalworking oil composition, a heat treating oil composition, a lubricating oil composition for machine tools and a lubricating oil composition which comprise a lubricating oil base oil having % CA of not more than 2, % CP/% CN of not less than 6 and an iodine value of not more than 2.5.

Abstract: A semiconductor device 100 according to the present invention includes a TFT 120 and a TFT 140. The TFT 120 has a gate electrode 122, a semiconductor layer 130 including a microcrystalline semiconductor film 132, and a gate insulating layer 124 provided between the gate electrode 122 and the semiconductor layer 130. The TFT 140 has a gate electrode 142, a semiconductor layer 150 including a microcrystalline semiconductor film 152, and a gate insulating layer 144 provided between the gate electrode 142 and the semiconductor layer 150. The thickness and layer structure of the semiconductor layer 150 of the TFT 140 are different from those of the semiconductor layer 130 of the TFT 120.

Abstract: The present invention provides a refrigerating machine oil, a compressor oil composition, a hydraulic oil composition, a metalworking oil composition, a heat treating oil composition, a lubricating oil composition for machine tools and a lubricating oil composition which comprise a lubricating oil base oil having % CA of not more than 2, % CP/% CN of not less than 6 and an iodine value of not more than 2.5.

Abstract: A quantum dot forming method for forming quantum dots on a surface of a substrate includes exciting a substrate surface with a laser beam having a standing wave which is irradiated from one side of the substrate along the surface of the substrate to excite the surface of the substrate at an interval of one half of a wavelength of the standing wave, and forming a quantum dot with a film differing in lattice constant from a base film forming the surface of the substrate by allowing the film differing in lattice constant to grow on the substrate to form the quantum dots in excited spots of the surface of the substrate.