Patents by Inventor Hossein Sarbishaei

Hossein Sarbishaei has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Zener-Triggered SCR-Based Electrostatic Discharge Protection Devices For CDM And HBM Stress Conditions
    Publication number: 20110133247
    Abstract: SCR device is modified to improve turn-on speed for CDM stress conditions. A zener diode is integrated inside SCR device to create an internal feedback and improve turn-on speed. The zener diode is designed as a p+n+ diode in the boundary of the well-substrate junction. In the preferred implementation, zener diode is integrated inside the DSCR and is called zener-triggered DSCR. Zener-triggered DSCR reduces the first breakdown voltage to provide protection for thin gate oxide during HBM stress conditions. At the same time, this device increases turn-on speed to provide protection for CDM stress conditions.
    Type: Application
    Filed: December 8, 2009
    Publication date: June 9, 2011
    Inventors: Hossein Sarbishaei, Manoj Sachdev