Abstract: A display apparatus according to an embodiment of the present invention may include a substrate; a plurality of sub-pixels disposed on the substrate; a plurality of anodes disposed in the plurality of sub-pixels; a bank disposed to cover ends of the plurality of anodes; an organic layer disposed on the plurality of anodes and the bank; a cathode disposed on the organic layer; a first pattern disposed in the bank or on the bank so that the organic layer has a step; and a second pattern disposed between the organic layer and the cathode so that a step of the cathode is smaller than the step of the organic layer.

Abstract: The present invention relates to a method of manufacturing a photonic integrated device based on single-step active layer epitaxial growth, and the method includes forming, on a substrate, a reference region having a first bandgap and a region having a bandgap, which is red-shifted relative to the first bandgap, through active layer epitaxial growth, and applying a blue-shift to the substrate to form a region having a second bandgap that is blue-shifted relative to the first bandgap.

Abstract: Provided is a method and apparatus for checking the oil filling of an electronic clutch provided in a vehicle transmission. This approach determines the presence of air inside a hydraulic cylinder or clutch tube based on the current value profile generated when a piston of a hydraulic actuator is driven, without a separate air detection device.

Abstract: The disclosure relates to a method and an apparatus for determining a lane centerline network.

Abstract: Provided is an electro-absorption modulated lasers with identical-active layer. The lasers include a substrate having a passive waveguide region, an LD region on one side of the passive waveguide region, and an EAM region on the other side of the passive waveguide region, an active layer provided on the substrate and extending from the LD region to the EAM region, a grating layer provided on the active layer, a clad layer provided on the grating layer, and electrodes provided in the LD region and the EAM region of the clad layer.

Abstract: Disclosed are a Mach-Zehnder interferometric optical modulator and a method for manufacturing the same. The modulator includes first and second lower clad layers, a core layer, an upper clad layer, a waveguide, and electrodes. The waveguide may include an input waveguide, a waveguide divider, branch waveguides, and a waveguide combiner. Each of the branch waveguides includes first and second connection regions connected to the waveguide combiner and the waveguide divider, respectively, and a phase shift region having a cross-section of a reverse mesa structure that has an upper width that is the same as widths of the first and second connection regions and a lower width that is smaller than the widths of the first and second connection regions.

Abstract: Provided are a method and apparatus for determining a location of an object on a lane map, wherein the method includes acquiring image data captured by a camera mounted on a vehicle, generating feature information regarding a plurality of features included in the image data by performing certain processing on the image data, determining a plurality of features corresponding to a same object in a plurality of pieces of image data, on the basis of a degree of correlation between the plurality of features included in the image data, and determining a location of an object on the lane map, on the basis of location information of the vehicle on the lane map and feature location information on the plurality of pieces of image data.

Abstract: Disclosed is a large-area III-V semiconductor layer transferring method. The large-area III-V semiconductor layer transferring method includes: forming III-V semiconductor dies on a lower substrate; forming dielectric patterns on the III-V semiconductor dies and the lower substrate exposed between the III-V semiconductor dies; forming a lower III-V semiconductor layer on the dielectric patterns and the III-V semiconductor dies; forming a sacrificial layer on the lower III-V semiconductor layer; forming an upper III-V semiconductor layer on the sacrificial layer; bonding an upper substrate onto the III-V semiconductor layer; and removing the sacrificial layer.

Abstract: Disclosed are a Mach-Zehnder interferometric optical modulator and a method for manufacturing the same. The modulator includes first and second lower clad layers stacked on a substrate, a core layer on the first and second lower clad layers, a first upper clad layer on the core layer, a second upper clad layer on the first upper clad layer, and electrodes on the second upper clad layer. The second upper clad layer includes an input waveguide, an output waveguide spaced apart from the input waveguide, branch waveguides branched from the input waveguide and coupled to the output waveguide, and insulating blocks provided on both outer sides of the branch waveguides.

Abstract: A light emitting display device can include a plurality of light emitting portions disposed on a substrate and a non-light emitting portion between the light emitting portions; first electrodes respectively disposed at the plurality of light emitting portions, the first electrodes being spaced apart from each other; a first stack, a charge generation layer and a second stack disposed on the first electrodes, the charge generation layer being disposed between the first stack and the second stack; and a second electrode disposed on the second stack. Also, the second electrode is connected to the first charge generation layer through a connection portion at the non-light emitting portion.

Abstract: A display apparatus according to an embodiment of the present invention may include a substrate; a plurality of sub-pixels disposed on the substrate; a plurality of anodes disposed in the plurality of sub-pixels; a bank disposed to cover ends of the plurality of anodes; an organic layer disposed on the plurality of anodes and the bank; a cathode disposed on the organic layer; a first pattern disposed in the bank or on the bank so that the organic layer has a step; and a second pattern disposed between the organic layer and the cathode so that a step of the cathode is smaller than the step of the organic layer.

Abstract: Provided is a method of manufacturing an optical integrated device. The method includes forming a lower clad layer on a substrate, forming a plurality of mask patterns arranged in one direction on the lower clad layer, forming a core layer on a portion of the lower clad layer by a selective area growth method using the mask patterns as deposition masks, and forming an upper clad layer on the core layers, wherein the mask patterns have different widths or include mask layers of different materials.

Abstract: Disclosed are a Mach-Zehnder interferometric optical modulator and a method for manufacturing the same. The modulator includes first and second lower clad layers, a core layer, an upper clad layer, a waveguide, and electrodes. The waveguide may include an input waveguide, a waveguide divider, branch waveguides, and a waveguide combiner. Each of the branch waveguides includes first and second connection regions connected to the waveguide combiner and the waveguide divider, respectively, and a phase shift region having a cross-section of a reverse mesa structure that has an upper width that is the same as widths of the first and second connection regions and a lower width that is smaller than the widths of the first and second connection regions.

Abstract: A method of preparing a sintered solid electrolyte includes (a) coprecipitating a mixed solution including a lanthanum precursor, a zirconium precursor, a gallium precursor, a complexing agent, and a pH adjuster to provide a solid electrolyte precursor; (b) washing and drying the solid electrolyte precursor to provide a washed and dried solid electrolyte precursor; (c) mixing the washed and dried solid electrolyte precursor with a lithium source to provide a mixture; (d) calcining the mixture to provide a calcined solid electrolyte, which is a gallium (Ga)-doped lithium lanthanum zirconium oxide (LLZO), as represented by Chemical Formula 1 below, LixLayZrzGawO12,??Chemical Formula 1 where 5?x?9, 2?y?4, 1?z?3, and 0<w?4; and (e) sintering the calcined solid electrolyte at a temperature ranging from 1,000° C. to 1,300° C. to provide the sintered solid electrolyte, wherein a ratio (M1:M2) of moles (M1) of lithium element to moles (M2) of gallium element ranges from 6.7:0.1 to 5.8:0.4.

Abstract: The method for manufacturing a solid electrolyte using an LLZ material for a lithium-ion battery comprises the steps of: providing a starting material in which lanthanum nitrate [La(NO3)3.6H2O] and zirconium nitrate [ZrO(NO3)2.6H2O] are mixed at a mole ratio of 3:2; forming an aqueous solution by dissolving the starting material; forming a precipitate by putting ammonia, which is a complex agent, and sodium hydroxide, which adjusts the pH of a reactor, into the aqueous solution, mixing the same, and then co-precipitating the mixture; forming a primary precursor powder by cleaning, drying and pulverizing the precipitate; forming a secondary precursor powder by mixing lithium powder [LiOH.H2O] with the primary precursor powder and ball-milling the mixture so as to solidify the lithium; and forming a solid electrolyte powder by heat-treating the secondary precursor powder.

Abstract: An electronic apparatus and a method for controlling the same are provided. The method includes executing an application; acquiring a resource configuration corresponding to the application; first identifying an external electronic apparatus from among a plurality of external electronic apparatuses based on preference information, the first identifying being in response to the resource configuration containing pre-stored information relating to the plurality of external electronic apparatuses; second identifying whether the external electronic apparatus is available; connecting to the external electronic apparatus; and sending a message regarding the application to the external electronic apparatus.

Abstract: The present invention relates to an all-solid-state lithium secondary battery and a method of manufacturing the same. The all-solid-state lithium secondary battery includes a cathode, an anode, and a composite solid electrolyte layer between the cathode and the anode, wherein first and second LLZOs contained respectively in the cathode and the composite solid electrolyte layer are each independently aluminum-doped or undoped LLZO, and the battery of the invention can exhibit improved discharge capacity and cycle characteristics because both the cathode and the composite solid electrolyte layer contain a conductive polymer, a lithium salt and an inorganic ceramic solid electrolyte.

Abstract: Provided is a method of operating a system-on-chip (SoC) including a plurality of CPUs. The method includes: receiving a debug request by a first CPU of the CPUs; outputting a first signal to the CPUs by the first CPU in response to the debug request; selecting a second CPU from the CPUs to control the debugging based on the first signal; and performing a debug operation by selecting a debug target block by the second CPU.

Abstract: A clutch control apparatus includes: a judder extractor for extracting a judder component based on a speed of a transmission input shaft; an anti-judder signal generator for generating a basic control signal, which is a reverse phase signal to the judder component, based on the judder component extracted by the judder extractor; a signal separator for separating an amplitude and a phase of the basic control signal received from the anti-judder signal generator; and a signal post-processing device for respectively adjusting the amplitude and the phase output from the signal separator and then combining the same together to output anti-judder torque.

Abstract: A method of preparing a gallium-doped LLZO solid electrolyte includes (a) preparing a solid electrolyte precursor slurry by subjecting a mixed solution comprising a metal aqueous solution including lanthanum (La), zirconium (Zr) and gallium (Ga), a complexing agent and a pH controller to coprecipitation; (b) preparing a solid electrolyte precursor by washing and drying the solid electrolyte precursor slurry; (c) preparing a mixture by mixing the solid electrolyte precursor with a lithium source; (d) preparing a gallium-doped LLZO solid electrolyte represented by Chemical Formula 1 below by calcining the mixture at 600 to 1,000° C.; and (e) thereafter sintering the solid electrolyte represented by Chemical Formula 1 at 1,000 to 1,300° C. By adjusting amounts of starting materials and controlling flow rates of supplied materials, a high-precision cubic structure with improved sintering properties is obtained and ionic conductivity of the solid electrolyte is increased.