Patents by Inventor Hotaka Ishizuka
Hotaka Ishizuka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7592256Abstract: A method of forming a tungsten film on a surface of an object to be processed in a vessel capable of being vacuumized, includes the steps of forming a tungsten film by alternately repeating a reduction gas supplying process for supplying a reduction gas and a tungsten gas supplying process for supplying a tungsten-containing gas with an intervening purge process therebetween for supplying an inert gas while vacuumizing the vessel. A reduction gas supplying period of a reduction gas supplying process among the repeated reduction gas supplying processes is set to be longer than that of the remaining reduction gas supplying processes.Type: GrantFiled: August 7, 2002Date of Patent: September 22, 2009Assignee: Tokyo Electron LimitedInventors: Kazuya Okubo, Mitsuhiro Tachibana, Cheng Fang, Kohichi Sato, Hotaka Ishizuka
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Publication number: 20080223455Abstract: To provide a gas supply unit capable of stabilizing a gas supply amount, the gas supply unit includes a mass flow controller, a first fluid control valve connected to the mass flow controller, a second fluid control valve connected in parallel to the first fluid control valve, and a third fluid control valve placed on a secondary side of the second fluid control valve. An opening degree of the third fluid control valve is adjusted based on a pressure difference between secondary pressure of the first fluid control valve and secondary pressure of the second fluid control valve.Type: ApplicationFiled: March 10, 2008Publication date: September 18, 2008Applicants: CKD CORPORATION, KABUSHIKI KAISHA TOSHIBAInventors: Jota Fukuhara, Hotaka Ishizuka, Yoshio Sugimoto, Yasunori Nishimura, Kazutoshi Itoh, Akihito Sugino, Hiroshi Tomita
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Patent number: 7060614Abstract: In a deposition method according to the present invention, a substrate (10) is first arranged in a processing vessel to carry out a heat-up step. Then, Si-containing gas, such as SiH4 gas, is supplied into the processing vessel to carry out an initiation step serving as a pretreating step on the substrate (ST2). Then, a deposition gas is supplied into the processing vessel to carry out a deposition step (ST3). By carrying out the initiation step (ST2) by setting the partial pressure of the Si-containing gas to be not less than 50 Pa (not less than 100 Pa when the heat-up step is not carried out), it is possible to stably produce a film having a good surface condition.Type: GrantFiled: July 25, 2001Date of Patent: June 13, 2006Assignee: Tokyo Electron LimitedInventors: Hotaka Ishizuka, Tsukasa Matsuda
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Publication number: 20050032364Abstract: A method of forming a tungsten film, capable of restricting voids and volcanoes as large as adversely affecting characteristics despite the small diameter of a buried hole, and providing good burying characteristics. When forming a tungsten film on the surface of an object of treating (W) in a vacuumizing-enabled treating vessel (22), a reduction gas supplying process 70 and a tungsten gas supplying process 72 for supplying a tungsten-containing gas are alternately repeated with a purge process 74, for supplying an inert gas while vacuumizing, intervened therebetween to thereby form an initial tungsten film 76. Therefore, an initial tungsten film can be formed as a nucleation layer high in film thickness uniformity; and, accordingly, when main tungsten films are subsequently deposited, it is possible to restrict voids and volcanoes as large as adversely affecting characteristics despite the small diameter of a buried hole, and provide good burying characteristics.Type: ApplicationFiled: August 7, 2002Publication date: February 10, 2005Inventors: Kazuya Okubo, Mitsuhiro Tachinaba, Cheng Fang, Kenji Suzuki, Kohichi Sato, Hotaka Ishizuka
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Publication number: 20030170981Abstract: In a deposition method according to the present invention, a substrate (10) is first arranged in a processing vessel to carry out a heat-up step. Then, Si-containing gas, such as SiH4 gas, is supplied into the processing vessel to carry out an initiation step serving as a pretreating step on the substrate (ST2). Then, a deposition gas is supplied into the processing vessel to carry out a deposition step (ST3). By carrying out the initiation step (ST2) by setting the partial pressure of the Si-containing gas to be not less than 50 Pa (not less than 100 Pa when the heat-up step is not carried out), it is possible to stably produce a film having a good surface condition.Type: ApplicationFiled: January 27, 2003Publication date: September 11, 2003Inventors: Hotaka Ishizuka, Tsukasa Matsuda
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Patent number: 6465347Abstract: A method of forming a tungsten film is capable of forming a tungsten film having a low resistivity. The method of forming a tungsten film (50) on a surface of a workpiece by a vacuum processing system (2) comprises, in sequential steps: a seed crystal growing process for growing tungsten seed crystal grains (48) on the surface of the workpiece in an atmosphere of a film forming gas containing tungsten atoms; a boron-exposure process for exposing the workpiece to an atmosphere of a boron-containing gas for a short time; and a tungsten film forming process for forming a tungsten film by making the tungsten seed crystal grains grow in an atmosphere of a gas containing a film forming gas containing tungsten atoms, and a hydrogen-diluted boron-containing gas. The tungsten film has a low resistivity.Type: GrantFiled: November 19, 2001Date of Patent: October 15, 2002Assignee: Tokyo Electron LimitedInventors: Hotaka Ishizuka, Mitsuhiro Tachibana
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Publication number: 20020048938Abstract: A method of forming a tungsten film is capable of forming a tungsten film having a low resistivity. The method of forming a tungsten film (50) on a surface of a workpiece by a vacuum processing system (2) comprises, in sequential steps: a seed crystal growing process for growing tungsten seed crystal grains (48) on the surface of the workpiece in an atmosphere of a film forming gas containing tungsten atoms; a boron-exposure process for exposing the workpiece to an atmosphere of a boron-containing gas for a short time; and a tungsten film forming process for forming a tungsten film by making the tungsten seed crystal grains grow in an atmosphere of a gas containing a film forming gas containing tungsten atoms, and a hydrogen-diluted boron-containing gas. The tungsten film has a low resistivity.Type: ApplicationFiled: November 19, 2001Publication date: April 25, 2002Inventors: Hotaka Ishizuka, Mitsuhiro Tachibana
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Patent number: 6331483Abstract: A method of forming a tungsten film is capable of forming a tungsten film having a low resistivity. The method of forming a tungsten film (50) on a surface of a workpiece by a vacuum processing system (2) comprises, in sequential steps: a seed crystal growing process for growing tungsten seed crystal grains (48) on the surface of the workpiece in an atmosphere of a film forming gas containing tungsten atoms; a boron-exposure process for exposing the workpiece to an atmosphere of a boron-containing gas for a short time; and a tungsten film forming process for forming a tungsten film by making the tungsten seed crystal grains grow in an atmosphere of a gas containing a film forming gas containing tungsten atoms, and a hydrogen-diluted boron-containing gas. The tungsten film has a low resistivity.Type: GrantFiled: December 14, 1999Date of Patent: December 18, 2001Assignee: Tokyo Electron LimitedInventors: Hotaka Ishizuka, Mitsuhiro Tachibana