Patents by Inventor Hou-Ju Huang
Hou-Ju Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230260911Abstract: A semiconductor device includes a semiconductor die and a conductive structure disposed side-by-side and spaced apart from each other through an insulating encapsulant. The conductive structure includes a first conductor laterally covered by the insulating encapsulant, and a second conductor disposed over and separating from the first conductor. The second conductor includes a first portion laterally covered by the insulating encapsulant and a second portion protruded from the insulating encapsulant, where a ratio of a first standoff height of the first portion and a second standoff height of the second portion ranges from about 0.4 to about 1.5.Type: ApplicationFiled: April 25, 2023Publication date: August 17, 2023Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Tsung-Fu Tsai, Hou-Ju Huang, Shih-Ting Lin, Szu-Wei Lu, Hung-Wei Tsai
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Patent number: 11670593Abstract: An electronic device and a manufacturing method thereof are provided. The method includes at least the following steps. An insulating encapsulant is formed to encapsulate a multi-layered structure and a semiconductor die, where the multi-layered structure includes a first conductor, a diffusion barrier layer on the first conductor, and a metallic layer on the diffusion barrier layer, and the insulating encapsulant at least exposes a portion of the semiconductor die and a portion of the first conductor. A redistribution structure is formed over the insulating encapsulant, the semiconductor die, and the first conductor. The metallic layer is removed to form a recess in the insulating encapsulant. A second conductor is formed in the recess over the diffusion barrier layer, where the first conductor, the diffusion barrier layer, and the second conductor form a conductive structure that is electrically coupled to the semiconductor die through the redistribution structure.Type: GrantFiled: December 14, 2020Date of Patent: June 6, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Tsung-Fu Tsai, Hou-Ju Huang, Shih-Ting Lin, Szu-Wei Lu, Hung-Wei Tsai
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Publication number: 20210098386Abstract: An electronic device and a manufacturing method thereof are provided. The method includes at least the following steps. An insulating encapsulant is formed to encapsulate a multi-layered structure and a semiconductor die, where the multi-layered structure includes a first conductor, a diffusion barrier layer on the first conductor, and a metallic layer on the diffusion barrier layer, and the insulating encapsulant at least exposes a portion of the semiconductor die and a portion of the first conductor. A redistribution structure is formed over the insulating encapsulant, the semiconductor die, and the first conductor. The metallic layer is removed to form a recess in the insulating encapsulant. A second conductor is formed in the recess over the diffusion barrier layer, where the first conductor, the diffusion barrier layer, and the second conductor form a conductive structure that is electrically coupled to the semiconductor die through the redistribution structure.Type: ApplicationFiled: December 14, 2020Publication date: April 1, 2021Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Tsung-Fu Tsai, Hou-Ju Huang, Shih-Ting Lin, Szu-Wei Lu, Hung-Wei Tsai
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Patent number: 10867919Abstract: An electronic device and the manufacturing method thereof are provided. The electronic device includes a semiconductor die, a conductive structure electrically coupled to the semiconductor die, an insulating encapsulant encapsulating the semiconductor die and the conductive structure, and a redistribution structure disposed on the insulating encapsulant and the semiconductor die. The conductive structure includes a first conductor, a second conductor, and a diffusion barrier layer between the first conductor and the second conductor. The redistribution structure is electrically connected to the semiconductor die and the first conductor of the conductive structure.Type: GrantFiled: September 19, 2018Date of Patent: December 15, 2020Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Tsung-Fu Tsai, Hou-Ju Huang, Shih-Ting Lin, Szu-Wei Lu, Hung-Wei Tsai
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Publication number: 20200091077Abstract: An electronic device and the manufacturing method thereof are provided. The electronic device includes a semiconductor die, a conductive structure electrically coupled to the semiconductor die, an insulating encapsulant encapsulating the semiconductor die and the conductive structure, and a redistribution structure disposed on the insulating encapsulant and the semiconductor die. The conductive structure includes a first conductor, a second conductor, and a diffusion barrier layer between the first conductor and the second conductor. The redistribution structure is electrically connected to the semiconductor die and the first conductor of the conductive structure.Type: ApplicationFiled: September 19, 2018Publication date: March 19, 2020Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Tsung-Fu Tsai, Hou-Ju Huang, Shih-Ting Lin, Szu-Wei Lu, Hung-Wei Tsai
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Patent number: 9627346Abstract: An embodiment is a structure comprising a package, a substrate, and external electrical connectors mechanically and electrically coupling the package to the substrate. The package contains a die. The external electrical connectors are between the package and the substrate. An underfill material is around a periphery region of the package and between the periphery region and the substrate. A gap is between a central region of the package and the substrate, and does not contain the underfill material. The underfill material may seal the gap. The gap may be an air gap. In some embodiments, the underfill material may fill greater than or equal to 10 percent and no more than 70 percent of a volume between the package and the substrate.Type: GrantFiled: December 11, 2013Date of Patent: April 18, 2017Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Feng-Cheng Hsu, Hou-Ju Huang, Szu-Wei Lu, Jing-Cheng Lin
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Publication number: 20150162258Abstract: An embodiment is a structure comprising a package, a substrate, and external electrical connectors mechanically and electrically coupling the package to the substrate. The package contains a die. The external electrical connectors are between the package and the substrate. An underfill material is around a periphery region of the package and between the periphery region and the substrate. A gap is between a central region of the package and the substrate, and does not contain the underfill material. The underfill material may seal the gap. The gap may be an air gap. In some embodiments, the underfill material may fill greater than or equal to 10 percent and no more than 70 percent of a volume between the package and the substrate.Type: ApplicationFiled: December 11, 2013Publication date: June 11, 2015Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Feng-Cheng Hsu, Hou-Ju Huang, Szu-Wei Lu, Jing-Cheng Lin