Abstract: The present invention discloses a high brightness LED structure, wherein a highly-doped n-type AlInP island structure is formed on a portion of the surface of an AlGaInP semiconductor stack structure and functions as a current barrier structure. The island structure is covered by a p-type window layer and positioned below a p-type ohmic electrode. The island structure can make more input current flow to the AlGaInP semiconductor stack structure not shielded by the light-emitting side electrode and thus can optimize the current distribution and promote the light-emitting efficiency.