Abstract: A system and method of ink-jet printing on vinyl print media can comprise jetting an ink-jet ink onto a vinyl print medium to form a printed image, and applying from 50-100° C. of heat to the printed image. The ink-jet ink can include a colorant, an aqueous liquid vehicle, and core-shell polymer particles. Upon printing and heating, at least a portion of the aqueous liquid vehicle evaporates, the vinyl print medium plasticizes (but does not flow), and the ink-jet ink flows. The fused polymer particles form a film that encapsulates at least a portion of the colorant.

Abstract: A self-aligning nanowire includes a nanowire portion and an aligning member attached to the nanowire portion. The aligning member interacts with another aligning member on an adjacent self-aligning nanowire to align the nanowires together. A method of aligning nanowires includes providing a plurality of the self-aligning nanowires, suspending the plurality in a carrier solution, and depositing the suspended plurality on a substrate. An ink formulation includes the plurality of suspended self-aligning nanowires in the carrier solution. A method of producing the self-aligning nanowire includes providing and associating the nanowire portion and the aligning member such that the nanowire produced is self-aligning with another nanowire.

Abstract: Toner compositions for electrophotographic printing are disclosed, along with methods for making such toners, and printing systems utilizing them. The disclosed process imparts qualities to the toner making it more efficiently and effectively incorporated into printed images.

Abstract: A thin film semiconductor and a method of its fabrication use induced crystallization and aggregation of a nanocrystal seed layer to form a merged-domain layer. The nanocrystal seed layer is deposited onto a substrate surface within a defined boundary. A reaction temperature below a boiling point of a reaction solution is employed. A thin film metal-oxide transistor and a method of its production employ the thin film semiconductor as a channel of the transistor. The merged-domain layer exhibits high carrier mobility.

Abstract: Crystal growth performed in situ facilitates interconnection of prefabricated nano-structures. The nano-structures are immersed in a growth solution having a controllable saturation condition. Changing the saturation condition of the solution modifies a size of the immersed nanowires. The solution includes a solute of a nano-structure precursor material. The saturation condition is changed to one or both etch material from a surface of the nano-structures and initiate crystal growth on the nano-structure surface. A nano-structure interconnection system includes the growth solution and equipment to deposit the prefabricated nano-structures on a substrate. An interconnected structure includes a plurality of nano-structures disposed on a substrate in a cluster and a liquid phase-grown crystal lattice on surfaces of the nano-structures to form physical interconnections between the plurality. An ink formulation includes the plurality of nano-structures suspended in the growth solution.

Abstract: Photoconductor structure processing methods and imaging device photoconductor structures are described. According to one embodiment, a photoconductor structure processing method includes processing a photoconductor structure of an imaging device and wherein the photoconductor structure comprises charge transport material configured to conduct electrical charges generated responsive to reception of light to form a latent image during an electro-photographic imaging process, the processing comprising removing at least some of the charge transport material from at least a portion of the photoconductor structure. The photoconductor structure may also be further treated to reduce the migration of charge transport material. Additional embodiments are described in the disclosure.

Abstract: An ink formulation of a circuit element includes a first powder having a first melting temperature, a second powder having a second melting temperature that is higher than the first melting temperature, and a polymer binder. A method of fabricating a circuit element on a substrate employs the ink formulation and includes depositing the ink formulation on a substrate, curing the polymer binder, and melting the first powder at the first melting temperature to yield a solid solution that forms the circuit element.

Abstract: A thin film semiconductor and a method of its fabrication use induced crystallization and aggregation of a nanocrystal seed layer to form a merged-domain layer. The nanocrystal seed layer is deposited onto a substrate surface within a defined boundary. A reaction temperature below a boiling point of a reaction solution is employed. A thin film metal-oxide transistor and a method of its production employ the thin film semiconductor as a channel of the transistor. The merged-domain layer exhibits high carrier mobility.

Abstract: Crystal growth performed in situ facilitates interconnection of prefabricated nano-structures. The nano-structures are immersed in a growth solution having a controllable saturation condition. Changing the saturation condition of the solution modifies a size of the immersed nanowires. The solution includes a solute of a nano-structure precursor material. The saturation condition is changed to one or both etch material from a surface of the nano-structures and initiate crystal growth on the nano-structure surface. A nano-structure interconnection system includes the growth solution and equipment to deposit the prefabricated nano-structures on a substrate. An interconnected structure includes a plurality of nano-structures disposed on a substrate in a cluster and a liquid phase-grown crystal lattice on surfaces of the nano-structures to form physical interconnections between the plurality. An ink formulation includes the plurality of nano-structures suspended in the growth solution.