Abstract: A circuit including a die and an integrated passive device. The die includes a first substrate and at least one active device. The integrated passive device includes a first layer, a second substrate, a second layer and an inductance. The inductance includes vias, where the vias are implemented in the second substrate. The inductance is implemented on the first layer, the second substrate, and the second layer. A resistivity per unit area of the second substrate is greater than a resistivity per unit area of the first substrate. The third layer is disposed between the die and the integrated passive device. The third layer includes pillars, where the pillars respectively connect ends of the inductance to the at least one active device. The die, the integrated passive device and the third layer are disposed relative to each other to form a stack.

Abstract: A circuit including: a die a first substrate and at least one active device; an integrated passive device including a first layer, a second substrate, a second layer and an inductance; and a third layer. The inductance includes vias and is an electrostatic discharge inductance. The vias are implemented in the second substrate. The inductance is implemented on the first layer, the second substrate, and the second layer. A resistivity per unit area of the second substrate is greater than a resistivity per unit area of the first substrate. The third layer is disposed between the die and the integrated passive device. The third layer includes pillars. The pillars respectively connect ends of the inductance to the at least one active device. The die, the integrated passive device and the third layer are disposed relative to each other to form a stack.

Abstract: A circuit including a die and an integrated passive device. The die includes a first substrate and at least one active device. The integrated passive device includes a first layer, a second substrate, a second layer and an inductance. The inductance includes vias, where the vias are implemented in the second substrate. The inductance is implemented on the first layer, the second substrate, and the second layer. A resistivity per unit area of the second substrate is greater than a resistivity per unit area of the first substrate. The third layer is disposed between the die and the integrated passive device. The third layer includes pillars, where the pillars respectively connect ends of the inductance to the at least one active device. The die, the integrated passive device and the third layer are disposed relative to each other to form a stack.

Abstract: A balun including a first conductor winding, a first inductor, a second inductor, a third inductor, and a fourth inductor. The first conductor winding has a figure eight shape including a first loop and a second loop. The first inductor and the second inductor substantially surround the first loop. The third inductor and the fourth inductor substantially surround the second loop.

Abstract: A balun including a first conductor winding, a first inductor, a second inductor, a third inductor, and a fourth inductor. The first conductor winding has a figure eight shape including a first loop and a second loop. The first inductor and the second inductor substantially surround the first loop. The third inductor and the fourth inductor substantially surround the second loop.

Abstract: A balun includes a first conductor winding having a first figure eight shape and a second conductor winding have a second figure eight shape. The first figure eight shape includes a first loop and a second loop. The second figure eight shape includes a third loop and a fourth loop. The first loop and the second loop are not concentric. The third loop and the fourth loop are not concentric.

Abstract: A balun includes a first set of wound conductors includes a first loop portion and a second loop portion. The first loop portion and the second loop portion are conductively coupled and form a first figure eight structure. The balun further includes a second set of wound conductors includes a third loop portion and a fourth loop portion. The third loop portion and the fourth loop portion are conductively coupled and form a second figure eight structure. The first loop portion and the third loop portion are inductively coupled. The second loop portion and the fourth loop portion are inductively coupled.

Abstract: A balun includes a first set of wound conductors includes a first loop portion and a second loop portion. The first loop portion and the second loop portion are conductively coupled and form a first figure eight structure. The balun further includes a second set of wound conductors includes a third loop portion and a fourth loop portion. The third loop portion and the fourth loop portion are conductively coupled and form a second figure eight structure. The first loop portion and the third loop portion are inductively coupled. The second loop portion and the fourth loop portion are inductively coupled.