Abstract: A composite film (100, 200) and a preparation method therefor. The composite film (100, 200) may comprise: a substrate (110, 210); a first isolation layer (130), which is located on the top surface of the substrate (110, 210); and an optical film structure (A, B), which is located on the first isolation layer (130) and comprises a stacked structure formed from a light modulation layer (150), a light transmission layer (170) and an active layer (190) that generates light. The active layer (190) may be in contact with one of the light modulation layer (150) and the light transmission layer (170).

Abstract: The invention provides a micron-scale monocrystal film. The micron-scale monocrystal film includes 1) a substrate layer, and 2) a micron-scale monocrystal film layer located on the substrate layer, wherein a transition layer is interposed between the substrate layer and micron-scale monocrystal film layer, and the transition layer may include a first transition layer disposed adjacent to the substrate layer and a second transition layer disposed adjacent to the micron monocrystal film layer, wherein the transition layer may include H and an element from at least one kind of plasma gas used during the plasma bonding of the substrate layer and the micron-scale monocrystal film layer.

Abstract: Provided is a nano-scale single crystal thin film. The nano-scale single crystal thin film comprises a nano-scale single crystal thin film layer, a first transition layer, an isolation layer, a second transition layer, and a substrate layer. The first transition layer is located between the nano-scale single crystal thin film layer and the isolation layer, while the second transition layer is located between the isolation layer and the substrate layer. The first transition layer comprises a certain concentration of the H element.

Abstract: The present disclosure provides a composite monocrystalline film, which may comprise the following seven layers; a substrate (110); a first transition layer (115) disposed on the substrate; a first isolation layer (120) disposed on the first transition layer; a second transition layer (125) disposed on the first isolation layer; a first film layer (130) disposed on the second transition layer; a third transition layer (135) disposed on the first film layer; and a second film layer (140) disposed on the third transition layer, wherein the first transition layer, second transition layer, and third transition layer may include H and Ar.

Abstract: The invention provides a micron-scale monocrystal film. The micron-scale monocrystal film includes 1) a substrate layer, and 2) a micron-scale monocrystal film layer located on the substrate layer, wherein a transition layer is interposed between the substrate layer and micron-scale monocrystal film layer, and the transition layer may include a first transition layer disposed adjacent to the substrate layer and a second transition layer disposed adjacent to the micron monocrystal film layer, wherein the transition layer may include H and an element from at least one kind of plasma gas used during the plasma bonding of the substrate layer and the micron-scale monocrystal film layer.