Patents by Inventor Hougong Wang
Hougong Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230298789Abstract: A magnetic thin film laminated structure includes a first layer structure and a second layer structure stacked on the first layer structure. The first layer structure includes an adhesive layer on a substance, the adhesive layer being made of a material having compressive stress, at least one pair of layers on the adhesive layer, each pair of the at least one pair of layers including a magnetic film layer and an isolation layer, and an additional magnetic film layer on the at least one pair of layers. The second layer structure includes another adhesive layer on the first layer structure, another at least one pair of layers on the another adhesive layer, each pair of the another at least one pair of layers including a magnetic film layer and an isolation layer, and another additional magnetic film layer on the another at least one pair of layers.Type: ApplicationFiled: May 26, 2023Publication date: September 21, 2023Inventors: Yujie YANG, Peijun DING, Tongwen ZHANG, Wei XIA, Hougong WANG
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Patent number: 11699541Abstract: A deposition method includes depositing an adhesive layer on a workpiece to be processed and depositing a magnetic/isolated unit, where the magnetic/isolation unit includes at least one pair of a magnetic film layer and an isolation layer that are alternately disposed. The deposition method of the magnetic thin film laminated structure, the magnetic thin film laminated structure and the micro-inductive device provided by the disclosure can increase a total thickness of the magnetic thin film laminated structure, thereby broadening the application frequency range of the inductive device fabricated thereby.Type: GrantFiled: April 17, 2019Date of Patent: July 11, 2023Assignee: BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.Inventors: Yujie Yang, Peijun Ding, Tongwen Zhang, Wei Xia, Hougong Wang
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Patent number: 11328940Abstract: A degassing chamber and a semiconductor processing apparatus are provided. The degassing chamber includes a chamber; a substrate container, movable within the chamber in a vertical direction; and a heating component, disposed within the chamber. A substrate transferring opening is formed through a sidewall of the chamber for transferring substrates into or out of the chamber. The heating component includes a first light source component and a second light source component. The chamber is divided into a first chamber and a second chamber by the substrate transferring opening. The first light source component is located in the first chamber, and the second light source component is located in the second chamber. The first light source component and the second light source component are provided for heating a substrate in the substrate container.Type: GrantFiled: March 26, 2019Date of Patent: May 10, 2022Assignee: BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.Inventors: Qiang Jia, Peijun Ding, Mengxin Zhao, Hougong Wang
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Patent number: 11309208Abstract: The present disclosure provides an electrostatic chuck (ESC) and a method for manufacturing the plurality of protrusions of the ESC. The electrostatic chuck includes a support surface for carrying a workpiece and the plurality of protrusions distributed at intervals on the support surface. The protrusions are formed by a hydrogen-free amorphous carbon with a resistivity ranging from 10?4 ?·cm˜109?·cm. For the ESC provided by the present disclosure, the protrusions are formed by the hydrogen-free amorphous carbon and have a high hardness and a good wear resistance, which may effectively prevent a generation of particles. As such, the negative impact of the particles on the semiconductor process may be avoided, and the hydrogen does not dissociate in a high-temperature environment. Thereby, a problem that the protrusions may easily fall off and may not be suitable in the high-temperature environment (above 250° C.) may be solved.Type: GrantFiled: March 28, 2019Date of Patent: April 19, 2022Assignee: BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.Inventors: Hua Ye, Quanyu Shi, Hougong Wang, Jinguo Zheng
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Publication number: 20210005496Abstract: The present disclosure provides an electrostatic chuck (ESC) and a method for manufacturing the plurality of protrusions of the ESC. The electrostatic chuck includes a support surface for carrying a workpiece and the plurality of protrusions distributed at intervals on the support surface. The protrusions are formed by a hydrogen-free amorphous carbon with a resistivity ranging from 10?4 ?·cm˜109 ?·cm. For the ESC provided by the present disclosure, the protrusions are formed by the hydrogen-free amorphous carbon and have a high hardness and a good wear resistance, which may effectively prevent a generation of particles. As such, the negative impact of the particles on the semiconductor process may be avoided, and the hydrogen does not dissociate in a high-temperature environment. Thereby, a problem that the protrusions may easily fall off and may not be suitable in the high-temperature environment (above 250° C.) may be solved.Type: ApplicationFiled: March 28, 2019Publication date: January 7, 2021Inventors: Hua YE, Quanyu SHI, Hougong WANG, Jinguo ZHENG
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Patent number: 10886142Abstract: A method includes maintaining a pressure in the process chamber at a threshold before and after a wafer is transferred into the process chamber and during the annealing process of the wafer. Not only the temperature fluctuation caused by the turbulent flow of the gas during the annealing process of the wafer can be avoided, but also the time for the temperature in the chamber to recover and stabilize can be shortened, thereby improving the equipment productivity.Type: GrantFiled: May 1, 2019Date of Patent: January 5, 2021Assignee: BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.Inventors: Zhimin Bai, Qiang Li, Bin Deng, Yuchun Deng, Hougong Wang, Peijun Ding
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Patent number: 10622145Abstract: The present disclosure provides a magnetic thin film deposition chamber and a thin film deposition apparatus. The magnetic thin film deposition chamber includes a main chamber and a bias magnetic field device. A base pedestal is disposed in the main chamber for carrying a to-be-processed workpiece. The bias magnetic field device is configured for forming a horizontal magnetic field above the base pedestal, and the horizontal magnetic field is used to provide an in-plane anisotropy to a magnetized film layer deposited on the to-be-processed workpiece. The thin film deposition chamber provided in present disclosure is capable of forming a horizontal magnetic field above the base pedestal that is sufficient to induce an in-plane anisotropy to the magnetic thin film.Type: GrantFiled: April 17, 2019Date of Patent: April 14, 2020Assignee: BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.Inventors: Yujie Yang, Tongwen Zhang, Wei Xia, Peijun Ding, Hougong Wang
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Publication number: 20190259628Abstract: A method includes maintaining a pressure in the process chamber at a threshold before and after a wafer is transferred into the process chamber and during the annealing process of the wafer. Not only the temperature fluctuation caused by the turbulent flow of the gas during the annealing process of the wafer can be avoided, but also the time for the temperature in the chamber to recover and stabilize can be shortened, thereby improving the equipment productivity.Type: ApplicationFiled: May 1, 2019Publication date: August 22, 2019Inventors: Zhimin BAI, Qiang LI, Bin DENG, Yuchun DENG, Hougong WANG, Peijun DING
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Patent number: 10381202Abstract: Embodiments of the invention provide a magnetron and a magnetron sputtering device, including an inner magnetic pole and an outer magnetic pole with opposite polarities. Both the inner magnetic pole and the outer magnetic pole comprise multiple spirals. The spirals of the outer magnetic pole surround the spirals of the inner magnetic pole, and a gap exists therebetween. In addition, the gap has different widths in different locations from a spiral center to an edge. Moreover, both the spirals of the outer magnetic pole and the spirals of the inner magnetic pole follow a polar equation: r=a?n+b(cos ?)m+c(tan ?)k+d, 0<=n<=2, 0<=m<=2, c=0 or k=0. Because the gap between the inner magnetic pole and the outer magnetic pole has the different widths in a spiral discrete direction, width sizes of the gap in the different locations can be changed to control magnetic field strength distribution in a plane, thus adjusting uniformity of a membrane thickness.Type: GrantFiled: December 31, 2014Date of Patent: August 13, 2019Assignee: BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.Inventors: Yujie Yang, Qiang Li, Guoqing Qiu, Zhimin Bai, Hougong Wang, Peijun Ding, Feng Lv
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Publication number: 20190244754Abstract: The present disclosure provides a magnetic thin film deposition chamber and a thin film deposition apparatus. The magnetic thin film deposition chamber includes a main chamber and a bias magnetic field device. A base pedestal is disposed in the main chamber for carrying a to-be-processed workpiece. The bias magnetic field device is configured for forming a horizontal magnetic field above the base pedestal, and the horizontal magnetic field is used to provide an in-plane anisotropy to a magnetized film layer deposited on the to-be-processed workpiece. The thin film deposition chamber provided in present disclosure is capable of forming a horizontal magnetic field above the base pedestal that is sufficient to induce an in-plane anisotropy to the magnetic thin film.Type: ApplicationFiled: April 17, 2019Publication date: August 8, 2019Inventors: Yujie YANG, Tongwen ZHANG, Wei XIA, Peijun DING, Hougong WANG
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Publication number: 20190244736Abstract: A deposition method includes depositing an adhesive layer on a workpiece to be processed and depositing a magnetic/isolated unit, where the magnetic/isolation unit includes at least one pair of a magnetic film layer and an isolation layer that are alternately disposed. The deposition method of the magnetic thin film laminated structure, the magnetic thin film laminated structure and the micro-inductive device provided by the disclosure can increase a total thickness of the magnetic thin film laminated structure, thereby broadening the application frequency range of the inductive device fabricated thereby.Type: ApplicationFiled: April 17, 2019Publication date: August 8, 2019Inventors: Yujie YANG, Peijun DING, Tongwen ZHANG, Wei XIA, Hougong WANG
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Publication number: 20190221454Abstract: A degassing chamber and a semiconductor processing apparatus are provided. The degassing chamber includes a chamber; a substrate container, movable within the chamber in a vertical direction; and a heating component, disposed within the chamber. A substrate transferring opening is formed through a sidewall of the chamber for transferring substrates into or out of the chamber. The heating component includes a first light source component and a second light source component. The chamber is divided into a first chamber and a second chamber by the substrate transferring opening. The first light source component is located in the first chamber, and the second light source component is located in the second chamber. The first light source component and the second light source component are provided for heating a substrate in the substrate container.Type: ApplicationFiled: March 26, 2019Publication date: July 18, 2019Inventors: Qiang JIA, Peijun DING, Mengxin ZHAO, Hougong WANG
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Publication number: 20190218660Abstract: The present disclosure provides a degassing method, a degassing chamber, and a semiconductor processing apparatus. The degassing method includes heating a degassing chamber to provide an internal temperature at a preset temperature, and maintaining the internal temperature of the degassing chamber at the preset temperature; and transferring substrates to be degassed into the degassing chamber and heating the substrates for a preset period of time, and taking the substrates out after the preset period of time of the heating. The disclosed degassing method is able to improve the temperature uniformity not only for a same batch of substrates but also for different batches of substrates. In addition, the disclosed degassing method can also realize anytime instant loading/unloading of the substrates to be degassed, thereby increasing the productivity of the equipment.Type: ApplicationFiled: March 27, 2019Publication date: July 18, 2019Inventors: Hua YE, Qiang JIA, Yue XU, Bingxuan JIANG, Jue HOU, Pu SHI, Jinguo ZHENG, Lingbei ZONG, Mengxin ZHAO, Peijun DING, Hougong WANG
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Patent number: 10287686Abstract: The present invention provides a hot plate and substrate processing equipment using the same, wherein the hot plate comprises a central sub hot plate and at least one outer ring sub hot plate located around the central sub hot plate; thermal insulation parts are provided between the central sub hot plate and the outer ring sub hot plate and between two adjacent outer ring sub hot plates, so that the heat conduction between the adjacent sub hot plates can be effectively prevented or reduced by means of the thermal insulation parts. The hot plate and the substrate processing equipment using the same provided in the present invention can effectively compensate for the heat losses in the edge region of the substrate, so as to keep the heating rate the same in each region of the substrate.Type: GrantFiled: November 23, 2011Date of Patent: May 14, 2019Assignee: BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.Inventors: Mengxin Zhao, Xu Liu, Peijun Ding, Hougong Wang, Wei Xia, Lihui Wen
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Publication number: 20170011894Abstract: Embodiments of the invention provide a magnetron and a magnetron sputtering device, including an inner magnetic pole and an outer magnetic pole with opposite polarities. Both the inner magnetic pole and the outer magnetic pole comprise multiple spirals. The spirals of the outer magnetic pole surround the spirals of the inner magnetic pole, and a gap therebetween. In addition, the gap has different widths in different locations from a spiral center to an edge. Moreover, both the spirals of the outer magnetic pole and the spirals of the inner magnetic pole follow a polar equation: r=a?n+b(cos ?)m+c(tan ?)k+d, 0<=n<=2, 0<=m<=2, c=0 or k=0. Because the gap between the inner magnetic pole and the outer magnetic pole has the different widths in a spiral discrete direction, width sizes of the gap in the different locations can be changed to control magnetic field strength distribution in a plane, thus adjusting uniformity of a membrane thickness.Type: ApplicationFiled: December 31, 2014Publication date: January 12, 2017Applicant: BEIJING NMC CO., LTD.Inventors: Yujie YANG, Qiang LI, Guoqing QIU, Zhimin BAI, Hougong WANG, Peijun DING, Feng LV
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Patent number: 8747556Abstract: Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel.Type: GrantFiled: September 14, 2012Date of Patent: June 10, 2014Assignee: Applied Materials, Inc.Inventors: Hyman W. H. Lam, Bo Zheng, Hua Ai, Michael Jackson, Xiaoxiong Yuan, Hougong Wang, Salvador P. Umotoy, Sang Ho Yu
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Publication number: 20140087091Abstract: Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel.Type: ApplicationFiled: September 24, 2012Publication date: March 27, 2014Applicant: Applied Materials, Inc.Inventors: Hyman W.H. Lam, Bo Zheng, Hua Ai, Michael Jackson, Xiaoxiong Yuan, Hougong Wang, Salvador P. Umotoy, San H. Yu
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Publication number: 20130269614Abstract: The present invention provides a hot plate and substrate processing equipment using the same, wherein the hot plate comprises a central sub hot plate and at least one outer ring sub hot plate located around the central sub hot plate; thermal insulation parts are provided between the central sub hot plate and the outer ring sub hot plate and between two adjacent outer ring sub hot plates, so that the heat conduction between the adjacent sub hot plates can be effectively prevented or reduced by means of the thermal insulation parts. The hot plate and the substrate processing equipment using the same provided in the present invention can effectively compensate for the heat losses in the edge region of the substrate, so as to keep the heating rate the same in each region of the substrate.Type: ApplicationFiled: November 23, 2011Publication date: October 17, 2013Applicant: Beijing NMC Co., Ltd.Inventors: Mengxin Zhao, Xu Liu, Peijun Ding, Hougong Wang, Wei Xia, Lihui Wen
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Patent number: 8293015Abstract: Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel.Type: GrantFiled: September 14, 2011Date of Patent: October 23, 2012Assignee: Applied Materials, Inc.Inventors: Hyman W. H. Lam, Bo Zheng, Hua Ai, Michael Jackson, Xiaoxiong Yuan, Hougong Wang, Salvador P. Umotoy, Sang Ho Yu
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Publication number: 20120036637Abstract: Bed-bound patients are at risk for developing pressure ulcers after lying in the same position on a standard home/hospital bed for an extended period of time. In order to prevent pressure ulcers, patients' bodies need to be repositioned at certain time intervals by other personnel. This involves labor-intensive care, and the friction and shear forces during assisted turning often causes skin damage. The rotating bed enables bed-bound patients to reposition their body easily and frequently, thereby reducing external forces such as shearing forces and friction caused by assisted turning, and most importantly reducing the risk of developing pressure ulcers.Type: ApplicationFiled: August 13, 2010Publication date: February 16, 2012Inventors: Hougong Wang, Zhendong Liu