Patents by Inventor Houk Jang

Houk Jang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • NONVOLATILE MEMORY DEVICE AND OPERATING METHOD OF THE SAME
    Publication number: 20230189673
    Abstract: A nonvolatile memory device includes a resistance switching layer, a gate on the resistance switching layer, a gate oxide layer between the resistance switching layer and the gate, and a source and a drain, spaced apart from each other, on the resistance switching layer. A resistance value of the resistance switching layer is changed based on an illumination of light irradiated onto the resistance switching layer and is maintained as a changed resistance value.
    Type: Application
    Filed: February 10, 2023
    Publication date: June 15, 2023
    Applicants: Samsung Electronics Co., Ltd., President and Fellows Of Harvard College
    Inventors: Minhyun LEE, Houk JANG, Donhee HAM, Chengye LIU, Henry Julian HINTON, Haeryong KIM, Hyeonjin SHIN
  • Nonvolatile memory device and operating method of the same
    Patent number: 11600774
    Abstract: A nonvolatile memory device includes a resistance switching layer, a gate on the resistance switching layer, a gate oxide layer between the resistance switching layer and the gate, and a source and a drain, spaced apart from each other, on the resistance switching layer. A resistance value of the resistance switching layer is changed based on an illumination of light irradiated onto the resistance switching layer and is maintained as a changed resistance value.
    Type: Grant
    Filed: November 10, 2020
    Date of Patent: March 7, 2023
    Assignees: Samsung Electronics Co., Ltd., President and Fellows Of Harvard College
    Inventors: Minhyun Lee, Houk Jang, Donhee Ham, Chengye Liu, Henry Julian Hinton, Haeryong Kim, Hyeonjin Shin
  • MEMRISTOR AND NEUROMORPHIC DEVICE COMPRISING THE SAME
    Publication number: 20220320425
    Abstract: Provided are memristors and neuromorphic devices including the memristors. A memristor includes a lower electrode and an upper electrode that are apart from each other and first and second two-dimensional material layers that are arranged between the lower electrode and the upper electrode and stacked without a chemical bond therebetween.
    Type: Application
    Filed: June 9, 2022
    Publication date: October 6, 2022
    Applicants: Samsung Electronics Co., Ltd., President and Fellows Of Harvard College
    Inventors: Minhyun LEE, Dovran AMANOV, Renjing XU, Houk JANG, Haeryong KIM, Hyeonjin SHIN, Yeonchoo CHO, Donhee HAM
  • Memristor and neuromorphic device comprising the same
    Patent number: 11374171
    Abstract: Provided are memristors and neuromorphic devices including the memristors. A memristor includes a lower electrode and an upper electrode that are apart from each other and first and second two-dimensional material layers that are arranged between the lower electrode and the upper electrode and stacked without a chemical bond therebetween.
    Type: Grant
    Filed: March 19, 2020
    Date of Patent: June 28, 2022
    Assignees: Samsung Electronics Co., Ltd., President and Fellows of Harvard College
    Inventors: Minhyun Lee, Dovran Amanov, Renjing Xu, Houk Jang, Haeryong Kim, Hyeonjin Shin, Yeonchoo Cho, Donhee Ham
  • NEURAL COMPUTER INCLUDING IMAGE SENSOR CAPABLE OF CONTROLLING PHOTOCURRENT
    Publication number: 20220147799
    Abstract: Disclosed is a neural computer including an image sensor capable of controlling a photocurrent. The neural computer according to an embodiment includes a preprocessor configured to receive an image and generate a feature map for the received image; a flattening unit configured to transform the feature map generated by the preprocessor into tabular data to provide data output; and an image classifier configured to classify images received through the preprocessor by using the data output by the flattening unit as an input value. The preprocessor includes an optical signal processor configured to receive the image and generate the feature map.
    Type: Application
    Filed: October 13, 2021
    Publication date: May 12, 2022
    Applicants: Samsung Electronics Co., Ltd., President and Fellows Of Harvard College
    Inventors: Changhyun KIM, Houk JANG, Henry Julian HINTON, Hyeonjin SHIN, Minhyun LEE, Donhee HAM
  • NONVOLATILE MEMORY DEVICE AND OPERATING METHOD OF THE SAME
    Publication number: 20210151678
    Abstract: A nonvolatile memory device includes a resistance switching layer, a gate on the resistance switching layer, a gate oxide layer between the resistance switching layer and the gate, and a source and a drain, spaced apart from each other, on the resistance switching layer. A resistance value of the resistance switching layer is changed based on an illumination of light irradiated onto the resistance switching layer and is maintained as a changed resistance value.
    Type: Application
    Filed: November 10, 2020
    Publication date: May 20, 2021
    Applicants: Samsung Electronics Co., Ltd., President and Fellows Of Harvard College
    Inventors: Minhyun LEE, Houk JANG, Donhee HAM, Chengye LIU, Henry HINTON, Haeryong KIM, Hyeonjin SHIN
  • MEMRISTOR AND NEUROMORPHIC DEVICE COMPRISING THE SAME
    Publication number: 20200395540
    Abstract: Provided are memristors and neuromorphic devices including the memristors. A memristor includes a lower electrode and an upper electrode that are apart from each other and first and second two-dimensional material layers that are arranged between the lower electrode and the upper electrode and stacked without a chemical bond therebetween.
    Type: Application
    Filed: March 19, 2020
    Publication date: December 17, 2020
    Applicants: Samsung Electronics Co., Ltd., President and Fellows Of Harvard College
    Inventors: Minhyun LEE, Dovran AMANOV, Renjing XU, Houk JANG, Haeryong KIM, Hyeonjin SHIN, Yeonchoo CHO, Donhee HAM
  • Method for producing graphene at a low temperature, method for direct transfer of graphene using same, and graphene sheet
    Patent number: 9371234
    Abstract: The present invention relates to a method for forming graphene at a low temperature, to a method for direct transfer of graphene using same, and to a graphene sheet. The method for forming graphene at a low temperature comprises supplying a carbon-source-containing gas to a metal catalyst layer for graphene growth formed on a substrate, and forming graphene at a low temperature of 500° C. or less by means of inductively coupled plasma-chemical vapor deposition (ICP-CVD).
    Type: Grant
    Filed: July 15, 2011
    Date of Patent: June 21, 2016
    Assignees: Graphene Square, Inc., Hanwha Techwin Co., Ltd.
    Inventors: Byung Hee Hong, Jong-Hyun Ahn, Ji Beom Yoo, Su Kang Bae, Myung Hee Jung, Houk Jang, Youngbin Lee, Sang Jin Kim
  • METHOD FOR PRODUCING GRAPHENE AT A LOW TEMPERATURE, METHOD FOR DIRECT TRANSFER OF GRAPHENE USING SAME, AND GRAPHENE SHEET
    Publication number: 20130187097
    Abstract: The present invention relates to a method for forming graphene at a low temperature, to a method for direct transfer of graphene using same, and to a graphene sheet. The method for forming graphene at a low temperature comprises supplying a carbon-source-containing gas to a metal catalyst layer for graphene growth formed on a substrate, and forming graphene at a low temperature of 500° C. or less by means of inductively coupled plasma-chemical vapor deposition (ICP-CVD).
    Type: Application
    Filed: July 15, 2011
    Publication date: July 25, 2013
    Applicants: SAMSUNG TECHWIN CO., LTD., SUNGKYUNKWAN UNIVERSITY FOUNDATION FOR CORPORATE COLLABORATION
    Inventors: Byung Hee Hong, Jong-Hyun Ahn, Ji Beom Yoo, Su Kang Bae, Myung Hee Jung, Houk Jang, Youngbin Lee, Sang Jin Kim