Abstract: In accordance with an embodiment, a method for manufacturing a semiconductor device includes forming a first front layer and a first rear layer of a first material respectively on a front main face and a rear main face of a semiconductor substrate wafer; forming a first plurality of trenches and a second plurality of trenches respectively in a surface of the first front layer and in a surface of the first rear layer; forming a second front layer of a second material on the first front layer, where the second front layer extends over the first front layer, in the first plurality of trenches, and between the first plurality of trenches on the surface of the first front layer; and forming a second rear layer of the second material on the surface of the first rear layer, wherein the second rear layer extends over the first rear layer, in the second plurality of trenches, and between the second plurality of trenches on the surface of the first rear layer.

Abstract: The invention relates to a Bragg mirror comprising a portion (110) of ribbon (100) having a refractive index n1, corrugations (112) having a refractive index n3 and a separation layer (111) separating the ribbon (100) from the corrugations (112) and having a refractive index n2, such that n2<n3 and n2<n1. The invention also relates to a method for producing such a mirror.

Abstract: An optical system is provided comprising a Bragg mirror comprising a ribbon part having a refractive index n1, corrugations having a refractive index n3 and a separation layer separating the ribbon from the corrugations and having a refractive index n2, such that n2<n3 and n2<n1. Also provided is a method for manufacturing such a mirror, and a laser comprising such a mirror as an output mirror.

Abstract: The invention relates to a method for manufacturing a waveguide (2a, 2b) comprising: A supplying of a substrate (1) comprising a stack of a first layer (11) based on a first material on a second layer (12) based on a second material, and at least one sequence successively comprising: An etching of the first material, in such a way as to define at least one pattern (20, 22a) having etching flanks (200, 201), A smoothing annealing assisted by hydrogen in such a way as to smooth the etching flanks (200, 201) of the at least one pattern (20, 22a), A re-epitaxy of the first material on the pattern (20, 22a) based on the first material.

Abstract: The invention relates to a method for manufacturing a waveguide (2a, 2b) comprising: A supplying of a substrate (1) comprising a stack of a first layer (11) based on a first material on a second layer (12) based on a second material, and at least one sequence successively comprising: An etching of the first material, in such a way as to define at least one pattern (20, 22a) having etching flanks (200, 201), A smoothing annealing assisted by hydrogen in such a way as to smooth the etching flanks (200, 201) of the at least one pattern (20, 22a), A re-epitaxy of the first material on the pattern (20, 22a) based on the first material

Abstract: The invention relates to an optoelectronic device for generating a frequency comb comprising a laser source (2), a ring microresonator (3) comprising a resonant ring (20) made of a third order optically non-linear material with abnormal dispersion regime. It also comprises a spectral tuning device comprising a junction guide (30) coupled to the resonant ring, electrical biasing means (40) adapted to apply an electrical voltage to the junction, and a control unit (42) adapted to modify the value of the electrical voltage until at least one dissipative temporal soliton is formed in the resonant ring.

Abstract: The invention relates to an optoelectronic device for generation of a frequency comb comprising: a laser source (2); an optical micro-resonator (3), comprising a resonant ring (20); at least one waveguide (30) optically coupled to the resonant ring (20), having an effective index associated with a fundamental optical mode supported by the filtering guide (30) equal to an effective index associated with an optical higher order mode supported by the resonant ring (20).

Abstract: The invention relates to an optoelectronic device for generating a frequency comb comprising a laser source (2), a ring microresonator (3) comprising a resonant ring (20) made of a third order optically non-linear material with abnormal dispersion regime. It also comprises a spectral tuning device comprising a junction guide (30) coupled to the resonant ring, electrical biasing means (40) adapted to apply an electrical voltage to the junction, and a control unit (42) adapted to modify the value of the electrical voltage until at least one dissipative temporal soliton is formed in the resonant ring.