Abstract: The present disclosure provides a plasma generation apparatus and a plasma-enhanced atomic layer deposition device. The plasma generation apparatus includes a plasma generation module and a variable pitch module. The plasma generation module includes a reaction tube and a coil disposed around an outer circumference of the reaction tube. The variable pitch module includes a plurality of movable sliders, and the coil is connected to the sliders such that each wrapped turn of the coil is driven to move with movement of the sliders. The variable pitch module changes a spacing between turns of the coil to adjust intensity of an induced magnetic field, thereby changing characteristics and induction efficiency of plasma. The variable pitch module further adjusts an overall position of the coil to change a height between the coil and a sample, thereby affecting density of plasma reaching the sample and improving process flexibility.

Abstract: A magnetic tunnel junction reference layer, magnetic tunnel junctions and a magnetic random access memory are provided, wherein the magnetic tunnel junction reference layer includes: an antiferromagnetic structure layer, which comprises a plurality of stacked metal magnetic layer units, wherein each of the metal magnetic layer units comprises a spacer layer and a magnetic layer on a surface of the spacer layer. The present invention forms a synthetic antiferromagnetic structure through multilayer stack of the metal spacer layer and the magnetic layer, so as to increase thermal stability of the magnetic tunnel junction reference layer with perpendicular magnetic anisotropy and reduce design complexity as well as cost of the film layers. The present invention forms a multilayer film structure without oxides, which has strong perpendicular magnetic anisotropy, high thermal stability, simple film layer, and low cost, thereby promoting large-scale use of the magnetic memory.