Patents by Inventor Houyou WANG

Houyou WANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor structure and manufacturing method thereof
    Patent number: 11257668
    Abstract: The present disclosure provides a method for manufacturing a semiconductor structure. The method includes: providing a substrate includes a first region and a second region; forming a first polycrystalline silicon layer on the substrate, wherein the first polycrystalline silicon layer covers the first region and the second region; forming a stacked structure on the first polycrystalline silicon layer; forming a protective layer on the stacked structure; forming a patterned photoresist layer on the protective layer, wherein the patterned photoresist layer exposes the protective layer in the second region; removing the protective layer and the stacked structure in the second region to expose the first polycrystalline silicon layer in the second region; removing the patterned photoresist layer; and forming a second polycrystalline silicon layer on the protective layer in the first region and the first polycrystalline silicon layer in the second region.
    Type: Grant
    Filed: July 1, 2020
    Date of Patent: February 22, 2022
    Assignee: Nexchip Semiconductor Co., LTD
    Inventors: Yongbo Feng, Hongbo Zhu, Houyou Wang, Mingyang Tsai
  • SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
    Publication number: 20210375617
    Abstract: The present disclosure provides a method for manufacturing a semiconductor structure. The method includes: providing a substrate includes a first region and a second region; forming a first polycrystalline silicon layer on the substrate, wherein the first polycrystalline silicon layer covers the first region and the second region; forming a stacked structure on the first polycrystalline silicon layer; forming a protective layer on the stacked structure; forming a patterned photoresist layer on the protective layer, wherein the patterned photoresist layer exposes the protective layer in the second region; removing the protective layer and the stacked structure in the second region to expose the first polycrystalline silicon layer in the second region; removing the patterned photoresist layer; and forming a second polycrystalline silicon layer on the protective layer in the first region and the first polycrystalline silicon layer in the second region.
    Type: Application
    Filed: July 1, 2020
    Publication date: December 2, 2021
    Applicant: Nexchip Semiconductor Co., LTD
    Inventors: Yongbo FENG, Hongbo ZHU, Houyou WANG, Mingyang TSAI