Abstract: A monolithic tandem electrochromic device, comprising a central transparent conductor ion blocking layer, a first electrochromic multilayer stack arranged on a first surface of the central transparent conductor ion blocking layer, and a second electrochromic multilayer stack arranged on a second surface of the central transparent conductor ion blocking layer is described. The central transparent conductor ion blocking layer can comprise ion conductivities between 10?4 and 10?20 S/cm, and electrical resistivity less than 100 Ohm-cm.

Abstract: A monolithic tandem electrochromic device, comprising a central transparent conductor ion blocking layer, a first electrochromic multilayer stack arranged on a first surface of the central transparent conductor ion blocking layer, and a second electrochromic multilayer stack arranged on a second surface of the central transparent conductor ion blocking layer is described. The central transparent conductor ion blocking layer can comprise ion conductivities between 10?4 and 10?20 S/cm, and electrical resistivity less than 100 Ohm-cm.

Abstract: An electrochromic device is provided. The device includes a substrate and an electrochromic stack on the substrate. The stack includes a first set of bus bars, a first transparent conductive layer, at least one electrochromic layer, a second transparent conductive layer, and a second set of bus bars, wherein at least one of the first transparent conductive layer or the second transparent conductive layer includes resistivity that varies by horizontal location according to a resistivity profile. In some embodiments the resistivity profile has a vertical component that may or may not be in addition to the horizontal component. Various embodiments of these materials can be tuned as to profiles of vertical resistance and horizontal sheet resistance.

Abstract: A monolithic tandem electrochromic device, comprising a central transparent conductor ion blocking layer, a first electrochromic multilayer stack arranged on a first surface of the central transparent conductor ion blocking layer, and a second electrochromic multilayer stack arranged on a second surface of the central transparent conductor ion blocking layer is described. The central transparent conductor ion blocking layer can comprise ion conductivities between 10?4 and 10?20 S/cm, and electrical resistivity less than 100 Ohm-cm.

Abstract: Electron-hole production at a Schottky barrier has recently been observed experimentally as a result of chemical processes. This conversion of chemical energy to electronic energy may serve as a basic link between chemistry and electronics and offers the potential for generation of unique electronic signatures for chemical reactions and the creation of a new class of solid state chemical sensors. Detention of the following chemical species was established: hydrogen, deuterium, carbon monoxide, molecular oxygen. The detector (1b) consists of a Schottky diode between an Si layer and an ultrathin metal layer with zero force electrical contacts.

Abstract: Electron-hole production at a Schottky barrier has recently been observed experimentally as a result of chemical processes. This conversion of chemical energy to electronic energy may serve as a basic link between chemistry and electronics and offers the potential for generation of unique electronic signatures for chemical reactions and the creation of a new class of solid state chemical sensors. Detection of the following chemical species was established: hydrogen, deuterium, carbon monoxide, molecular oxygen. The detector (1b) consists of a Schottky diode between an Si layer and an ultrathin metal layer with zero force electrical contacts.

Abstract: Electron-hole production at a Schottky barrier has recently been observed experimentally as a result of chemical processes. This conversion of chemical energy to electronic energy may serve as a basic link between chemistry and electronics and offers the potential for generation of unique electronic signatures for chemical reactions and the creation of a new class of solid state chemical sensors. Detection of the following chemical species was established: hydrogen, deuterium, carbon monoxide, molecular oxygen. The detector (1b) consists of a Schottky diode between an Si layer and an ultrathin metal layer with zero force electrical contacts.

Abstract: Electron-hole production at a Schottky barrier has recently been observed experimentally as a result of chemical processes. This conversion of chemical energy to electronic energy may serve as a basic link between chemistry and electronics and offers the potential for generation of unique electronic signatures for chemical reactions and the creation of a new class of solid state chemical sensors. Detention of the following chemical species was established: hydrogen, deuterium, carbon monoxide, molecular oxygen. The detector (1b) consists of a Schottky diode between an Si layer and an ultrathin metal layer with zero force electrical contacts.

Abstract: Electro-hole production at a Schottky barrier has recently been observed experimentally as a result of chemical processes. This conversion of chemical energy to electronic energy may serve as a basic link between chemistry and electronics and offers the potential for generation of unique electronic signatures for chemical reactions and the creation of a new class of solide state chemical sensors. Detection of the following chemical species was established: hydrogen, deuterion, carbon monoxide, molecular oxygen. The detector (1b) consists of a Schottky diode between an Si layer and an ultrathin metal layer with zero force electrical contacts.