Patents by Inventor Howard Dang

Howard Dang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Wafer electrical discharge control using argon free dechucking gas
    Patent number: 7892445
    Abstract: A method of dechucking a wafer, with a low-k dielectric layer, held onto an electrostatic chuck by an electrostatic charge in a plasma chamber is provided. The electrostatic clamping voltage is removed. An essentially argon free dechucking gas is provided into the plasma chamber. A dechucking plasma is formed from the dechucking gas in the plasma chamber. The dechucking plasma is stopped.
    Type: Grant
    Filed: September 12, 2007
    Date of Patent: February 22, 2011
    Assignee: Lam Research Corporation
    Inventors: David Wei, Howard Dang, Masahiro Watanabe, Sean Kang, Kenji Takeshita, Mayumi Block, Stephen Sirard, Eric Hudson
  • Preventing damage to low-k materials during resist stripping
    Patent number: 7385287
    Abstract: A method of forming a feature in a low-k dielectric layer is provided. A low-k dielectric layer is placed over a substrate. A patterned photoresist mask is placed over the low-k dielectric layer. At least one feature is etched into the low-k dielectric layer. A CO conditioning is preformed on the at least one feature after the at least one feature is etched. The patterned photoresist mask is stripped after the CO conditioning.
    Type: Grant
    Filed: May 3, 2007
    Date of Patent: June 10, 2008
    Assignee: LAM Research Corporation
    Inventors: Siyi Li, Helen H. Zhu, Howard Dang, Thomas S. Choi, Peter Loewenhardt
  • PREVENTING DAMAGE TO LOW-K MATERIALS DURING RESIST STRIPPING
    Publication number: 20070287292
    Abstract: A method of forming a feature in a low-k dielectric layer is provided. A low-k dielectric layer is placed over a substrate. A patterned photoresist mask is placed over the low-k dielectric layer. At least one feature is etched into the low-k dielectric layer. A CO conditioning is preformed on the at least one feature after the at least one feature is etched. The patterned photoresist mask is stripped after the CO conditioning.
    Type: Application
    Filed: May 3, 2007
    Publication date: December 13, 2007
    Applicant: LAM RESEARCH CORPORATION
    Inventors: Siyi LI, Helen ZHU, Howard DANG, Thomas CHOI, Peter LOEWENHARDT
  • Preventing damage to low-k materials during resist stripping
    Patent number: 7226852
    Abstract: A method of forming a feature in a low-k dielectric layer is provided. A low-k dielectric layer is placed over a substrate. A patterned photoresist mask is placed over the low-k dielectric layer. At least one feature is etched into the low-k dielectric layer. A CO conditioning is preformed on the at least one feature after the at least one feature is etched. The patterned photoresist mask is stripped after the CO conditioning.
    Type: Grant
    Filed: June 10, 2004
    Date of Patent: June 5, 2007
    Assignee: Lam Research Corporation
    Inventors: Siyi Li, Helen H. Zhu, Howard Dang, Thomas S. Choi, Peter Loewenhardt