Patents by Inventor Howard Dean Nordby, Jr.

Howard Dean Nordby, Jr. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
    Patent number: 9112083
    Abstract: A semiconductor device is provided that includes a Group III nitride based superlattice and a Group III nitride based active region comprising at least one quantum well structure on the superlattice. The quantum well structure includes a well support layer comprising a Group III nitride, a quantum well layer comprising a Group III nitride on the well support layer and a cap layer comprising a Group III nitride on the quantum well layer. A Group III nitride based semiconductor device is also provided that includes a gallium nitride based superlattice having at least two periods of alternating layers of InXGa1-XN and InYGa1-YN, where 0?X<1 and 0?Y<1 and X is not equal to Y. The semiconductor device may be a light emitting diode with a Group III nitride based active region. The active region may be a multiple quantum well active region.
    Type: Grant
    Filed: June 27, 2012
    Date of Patent: August 18, 2015
    Assignee: Cree, Inc.
    Inventors: David Todd Emerson, James Ibbetson, Michael John Bergmann, Kathleen Marie Doverspike, Michael John O'Loughlin, Howard Dean Nordby, Jr., Amber Christine Abare
  • GROUP III NITRIDE BASED LIGHT EMITTING DIODE STRUCTURES WITH A QUANTUM WELL AND SUPERLATTICE, GROUP III NITRIDE BASED QUANTUM WELL STRUCTURES AND GROUP III NITRIDE BASED SUPERLATTICE STRUCTURES
    Publication number: 20120298955
    Abstract: A semiconductor device is provided that includes a Group III nitride based superlattice and a Group III nitride based active region comprising at least one quantum well structure on the superlattice. The quantum well structure includes a well support layer comprising a Group III nitride, a quantum well layer comprising a Group III nitride on the well support layer and a cap layer comprising a Group III nitride on the quantum well layer. A Group III nitride based semiconductor device is also provided that includes a gallium nitride based superlattice having at least two periods of alternating layers of InXGa1-XN and InYGa1-YN, where 0?X<1 and 0?Y<1 and X is not equal to Y. The semiconductor device may be a light emitting diode with a Group III nitride based active region. The active region may be a multiple quantum well active region.
    Type: Application
    Filed: June 27, 2012
    Publication date: November 29, 2012
    Inventors: David Todd Emerson, James Ibbetson, Michael John Bergmann, Kathleen Marie Doverspike, Michael John O'Loughlin, Howard Dean Nordby, JR., Amber Christine Abare
  • Methods of fabricating group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
    Patent number: 8227268
    Abstract: A light emitting diode is provided having a Group III nitride based superlattice and a Group III nitride based active region on the superlattice. The active region has at least one quantum well stricture. The quantum well structure includes a first Group III nitride based barrier layer, a Group III nitride based quantum well layer on the first barrier layer and a second Group III nitride based barrier layer. A Group III nitride based semiconductor device and methods of fabricating a Group III nitride based semiconductor device having an active region comprising at least one quantum well structure are provided. The quantum well structure includes a well support layer comprising a Group III nitride, a quantum well layer comprising a Group III nitride on the well support layer and a cap layer comprising a Group III nitride on the quantum well layer.
    Type: Grant
    Filed: October 19, 2007
    Date of Patent: July 24, 2012
    Assignee: Cree, Inc.
    Inventors: David Todd Emerson, James Ibbetson, Michael John Bergmann, Kathleen Marie Doverspike, Michael John O'Loughlin, Howard Dean Nordby, Jr., Amber Christine Abare
  • Group III nitride based superlattice structures
    Patent number: 7312474
    Abstract: A light emitting diode is provided having a Group III nitride based superlattice and a Group III nitride based active region on the superlattice. The active region has at least one quantum well structure. The quantum well structure includes a first Group III nitride based barrier layer, a Group III nitride based quantum well layer on the first barrier layer and a second Group III nitride based barrier layer. A Group III nitride based semiconductor device and methods of fabricating a Group III nitride based semiconductor device having an active region comprising at least one quantum well structure are provided. The quantum well structure includes a well support layer comprising a Group III nitride, a quantum well layer comprising a Group III nitride on the well support layer and a cap layer comprising a Group III nitride on the quantum well layer.
    Type: Grant
    Filed: October 13, 2004
    Date of Patent: December 25, 2007
    Assignee: Cree, Inc.
    Inventors: David Todd Emerson, James Ibbetson, Michael John Bergmann, Kathleen Marie Doverspike, Michael John O'Loughlin, Howard Dean Nordby, Jr., Amber Christine Abare
  • Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
    Patent number: 6958497
    Abstract: A light emitting diode is provided having a Group III nitride based superlattice and a Group III nitride based active region on the superlattice. The active region has at least one quantum well structure. The quantum well structure includes a first Group III nitride based barrier layer, a Group III nitride based quantum well layer on the first barrier layer and a second Group III nitride based barrier layer. A Group III nitride based semiconductor device and methods of fabricating a Group III nitride based semiconductor device having an active region comprising at least one quantum well structure are provided. The quantum well structure includes a well support layer comprising a Group III nitride, a quantum well layer comprising a Group III nitride on the well support layer and a cap layer comprising a Group III nitride on the quantum well layer.
    Type: Grant
    Filed: May 7, 2002
    Date of Patent: October 25, 2005
    Assignee: Cree, Inc.
    Inventors: David Todd Emerson, James Ibbetson, Michael John Bergmann, Kathleen Marie Doverspike, Michael John O'Loughlin, Howard Dean Nordby, Jr., Amber Christine Abare