Abstract: An easy-open and reclosable package includes a pouch including a reclosure mechanism including a first and second interlocking strip each having an interlocking segment having a base surface and an interlocking surface; a panel section so arranged that when the panel section is displaced, and the package is opened, a product can be accessed between the first and second interlocking strips, the first and second interlocking surfaces are at least partially exposed, and the package can thereafter be reclosed by folding the package such that the interlocking surface of the first interlocking strip is interlocked with the interlocking surface of the second interlocking strip. The first and second strips are not exposed until the package is initially opened, and are not interlocked with one another until the package is initially opened and then reclosed.

Abstract: A semiconductor device is provided that includes a Group III nitride based superlattice and a Group III nitride based active region comprising at least one quantum well structure on the superlattice. The quantum well structure includes a well support layer comprising a Group III nitride, a quantum well layer comprising a Group III nitride on the well support layer and a cap layer comprising a Group III nitride on the quantum well layer. A Group III nitride based semiconductor device is also provided that includes a gallium nitride based superlattice having at least two periods of alternating layers of InXGa1-XN and InYGa1-YN, where 0?X<1 and 0?Y<1 and X is not equal to Y. The semiconductor device may be a light emitting diode with a Group III nitride based active region. The active region may be a multiple quantum well active region.

Abstract: A light emitting diode is provided having a Group III nitride based superlattice and a Group III nitride based active region on the superlattice. The active region has at least one quantum well stricture. The quantum well structure includes a first Group III nitride based barrier layer, a Group III nitride based quantum well layer on the first barrier layer and a second Group III nitride based barrier layer. A Group III nitride based semiconductor device and methods of fabricating a Group III nitride based semiconductor device having an active region comprising at least one quantum well structure are provided. The quantum well structure includes a well support layer comprising a Group III nitride, a quantum well layer comprising a Group III nitride on the well support layer and a cap layer comprising a Group III nitride on the quantum well layer.

Abstract: Computer-implemented systems and methods are provided for modeling a geomechanical reservoir system to provide fracturing predictions. The model predictions are generated by solving a system of partial differential equations that model the geomechanical reservoir system.

Abstract: The presently disclosed subject matter is generally directed to a reclosable one-way valve. Particularly, the valve comprises two sheets of thermoplastic material sealed together in a face-to-face relationship to define a channel there between. At least one of the two sheets comprises a natural curl tendency such that the valve is movable between an open, uncoiled position and a closed, coiled position.

Abstract: A package assembly including a first package a second package is provided. The first package can contain two or more compartments. A first compartment can substantially contain the second package and a second compartment can substantially contain a food product, such as a meat. The second package can contain a food additive, such as a marinade. Although substantially contained within the first compartment of the first package, the second package includes a reputable seal located proximate the second compartment of the first package. Applying pressure to the first compartment and, thus, the second package can break the rupturable seal to distribute the food additive from the second package to the food product in the second compartment. The first package can include a perimeter hard seal configured to withstand the pressure and, thus, prevent the leaking of any of the food product or the food additive from the first package during the distribution of the food additive.

Abstract: Systems and methods are provided for use in predicting sand production in a geomechanical reservoir system. Computation of the sand production predictions can include solving a system of partial differential equations that model the geomechanical reservoir system. Systems and methods also are provided for use in operating a geomechanical reservoir system based on the sand production prediction for controlling sand production in the geomechanical reservoir system.

Abstract: Computer-implemented systems and methods are provided for modeling a geomechanical reservoir system to provide fracturing predictions. The model predictions are generated by solving a system of partial differential equations that model the geomechanical reservoir system.

Abstract: A package assembly including a first package a second package is provided. The first package can contain two or more compartments. A first compartment can substantially contain the second package and a second compartment can substantially contain a food product, such as a meat. The second package can contain a food additive, such as a marinade. Although substantially contained within the first compartment of the first package, the second package includes a reputable seal located proximate the second compartment of the first package. Applying pressure to the first compartment and, thus, the second package can break the rupturable seal to distribute the food additive from the second package to the food product in the second compartment. The first package can include a perimeter hard seal configured to withstand the pressure and, thus, prevent the leaking of any of the food product or the food additive from the first package during the distribution of the food additive.

Abstract: A light emitting diode is provided having a Group III nitride based superlattice and a Group III nitride based active region on the superlattice. The active region has at least one quantum well structure. The quantum well structure includes a first Group III nitride based barrier layer, a Group III nitride based quantum well layer on the first barrier layer and a second Group III nitride based barrier layer. A Group III nitride based semiconductor device and methods of fabricating a Group III nitride based semiconductor device having an active region comprising at least one quantum well structure are provided. The quantum well structure includes a well support layer comprising a Group III nitride, a quantum well layer comprising a Group III nitride on the well support layer and a cap layer comprising a Group III nitride on the quantum well layer.

Abstract: A light emitting diode is provided having a Group III nitride based superlattice and a Group III nitride based active region on the superlattice. The active region has at least one quantum well structure. The quantum well structure includes a first Group III nitride based barrier layer, a Group III nitride based quantum well layer on the first barrier layer and a second Group III nitride based barrier layer. A Group III nitride based semiconductor device and methods of fabricating a Group III nitride based semiconductor device having an active region comprising at least one quantum well structure are provided. The quantum well structure includes a well support layer comprising a Group III nitride, a quantum well layer comprising a Group III nitride on the well support layer and a cap layer comprising a Group III nitride on the quantum well layer.

Abstract: A light emitting diode is provided having a Group III nitride based superlattice and a Group III nitride based active region on the superlattice. The active region has at least one quantum well structure. The quantum well structure includes a first Group III nitride based barrier layer, a Group III nitride based quantum well layer on the first barrier layer and a second Group III nitride based barrier layer. A Group III nitride based semiconductor device and methods of fabricating a Group III nitride based semiconductor device having an active region comprising at least one quantum well structure are provided. The quantum well structure includes a well support layer comprising a Group III nitride, a quantum well layer comprising a Group III nitride on the well support layer and a cap layer comprising a Group III nitride on the quantum well layer.

Abstract: An engraving tool includes an end portion extending to a tip, a pair of flutes in the end portion and wall sections between the flutes. The wall sections are ground in the area of the tip to form surfaces having cutting edges and facets disposed at specific angles relative to a plane perpendicular to axis.

Abstract: A cured novoloid fiber and the process for its manufacture which comprises blending a crosslinking agent with a novolac resin at a temperature below about 40.degree. C, rapidly melting the blend, fiberizing the melted blend before it can cure and curing the resulting fibers by exposing them to an acidic gas.