Abstract: The invention includes methods of forming a barrier layer. Material is ablated from an ECAE target to form a layer having a thickness variance of less than or equal to 1% of 1-sigma across a substrate surface. The invention includes a method of forming a tunnel junction. A thin film is formed between first and second magnetic layers. The thin film, the first magnetic layer, and/or the second magnetic layer are formed by ablating material from an ECAE target to provide improved layer thickness uniformity relative to corresponding layers formed utilizing non-ECAE targets. The invention includes a physical vapor deposition target and a thin film formed using the target. The target contains an alloy of aluminum and at least one alloying element selected from Ga, Zr and In. The resulting film has a thickness variance across the thin film of less than 1.5% of 1-sigma.

Abstract: A single crystal film of a hexagonal ferrite is deposited on a nonmagnetic, single crystal substrate with a film of a second ferrite material interposed between the substrate and the hexagonal ferrite film. In a preferred embodiment, the substrate is of nonmagnetic spinel and the second ferrite material is a spinel ferrite.

Abstract: A new compound consisting essentially of strontium, iron, boron and oxygen is termed strontium ferrite borate or corabelleite. A fluxed melt for the growth of single crystals and a method for growing single crystals of the corabelleite are disclosed.

Abstract: A new compound consisting essentially of strontium, iron, boron and oxygen is termed strontium ferrite borate or corabelleite. A method for preparing polycrystalline ceramic corabelleite is disclosed.

Abstract: Single crystal magnetoplumbite is grown at temperatures under 1000.degree. C. from a fluxed melt having a selected concentration ratio of boron oxide to lead oxide and a selected concentration of iron oxide sufficient to cause magnetoplumbite to crystallize yet not so much iron oxide as will cause the melt's crystallization temperature to exceed 1000.degree. C.

Abstract: Single crystal 2PbO.Fe.sub.2 O.sub.3 is grown from a fluxed melt having a selected concentration ratio of boron oxide to lead oxide and a selected concentration of iron oxide sufficient to cause 2PbO.Fe.sub.2 O.sub.3 to crystallize yet not so much iron oxide as will cause other phases to crystallize.

Abstract: A method for controlling the resonance frequency of single crystal yttrium iron garnet (YIG) films by incorporating lead as a partial substituent for the yttrium component of the YIG film.

Abstract: In the preferred embodiment, a monocrystalline film of substituted yttrium iron garnet (YIG) deposited on a <111> oriented gadolinium gallium garnet (GGG) substrate is formulated so that the temperature variation of the ferromagnetic resonance frequency of the film has an ordinary minimum. For a range of temperature variations about the temperature at which the minimum occurs, therefore, the resonance frequency of the film is relatively insensitive to variations in temperature. This minimum is believed to occur where the temperature variations of the demagnetizing effect and the temperature variations of anisotropy effects more or less counterbalance each other. The counterbalancing effects are brought within range of each other primarily by the substitution of gallium or aluminum for iron and the substitution of lanthanum for yttrium in the substituted YIG. Gallium or aluminum reduces the temperature drift of the saturation magnetization.

Abstract: In the preferred embodiment, a monocrystalline film of substituted yttrium iron garnet (YIG) deposited on a <11> oriented gadolinium gallium garnet (GGG) substrate is formulated so that the temperature variation of the ferromagnetic resonance frequency of the film has an ordinary minimum. For a range of temperature variations about the temperature at which the minimum occurs, therefore, the resonance frequency of the film is relatively insensitive to variations in temperature. This minimum is believed to occur where the temperature variations of the demagnetizing effect and the temperature variations of anisotropy effects more or less counterbalance each other. The counter-balancing effects are brought within range of each other primarily by the substitution of gallium or aluminum for iron and substitution of lanthanum for yttrium in the substituted YIG. Gallium or aluminum reduces the temperature drift of the saturation magnetization. Lanthanum adjusts the misfit stress and thus the anisotropy effects.

Abstract: A method for preparing M-type hexagonal ferrite single crystals for use as self-biased ferrite resonators. M-type (BaO.6Fe.sub.2 O.sub.3) ferrite crystals are grown on a [111] Mg (In, Ga).sub.2 O.sub.4 substrate using liquid phase epitaxial techniques. The substrate is immersed into a solute of (BaO, Fe.sub.2 O.sub.3 and ZnO) dissolved in a molten flux of molten (BaO and B.sub.2 O.sub.3) maintained in a supersaturated condition.

Abstract: There is described a unique mask and method of making same. The mask is especially useful in high resolution fabrication techniques such as in making magnetic bubble domain structures, semiconductor device structures and the like. The mask includes a suitable support of appropriate density to be substantially transparent to various types of radiation such as, but not limited to, E-beams, X-rays and the like. A layer of material which is substantially opaque to the same radiation and which can have the solubility thereof changed by application of E-beams or the like is provided on the support material. The mask is exposed to the solubility changing radiation wherein a pattern is defined in the layer, the layer is etched in a non-critical etch so that the soluble portion thereof is removed and the remaining material provides a suitable pattern. To the extent necessary, a suitable auxiliary support member can be provided to the support.

Abstract: A pair of substrates is mounted with first faces thereof directed away from each other and second faces thereof in sealing contact with each other. The substrates are then immersed in a first molten flux for depositing a film of a first material on the first faces of each of the substrates by liquid phase epitaxy (LPE). During the immersion in the first molten flux, the second faces of the substrates, being clamped against each other, seal each other from contact with the flux. After removal from the first flux, the pair of substrates is mounted with the films on the first faces thereof in sealing contact with each other. The substrates are then immersed in a second molten flux for depositing a film of a second material on the second faces of each of the substrates by LPE. The second material is, typically, different from the first material.

Abstract: M-type hexagonal ferrites whose prototype chemical formula (BaFe.sub.12 O.sub.19) contains no zinc and W-type hexagonal ferrites whose prototype chemical formula is (BaZn.sub.2 Fe.sub.16 O.sub.27) can be successfully grown by LPE on spinel substrates having appropriate lattice parameters when controlled quantities of the zinc are present in the melts from which these hexagonal ferrites are grown. Using this growth technique, composites comprising a monocrystalline magnetic M-type or W-type hexagonal ferrite film on a non-magnetic single crystalline spinel substrate are provided.