Abstract: A system and method to optimize a circuit layout, and more particularly, to a system and method of post layout data preparation to optimize a circuit layout and reduce random and systematic wire and via opens and shorts. The method includes stripping existing vias in a design layout and determining design parameters of the design layout including wiring placement and dimensions. The method further includes optimizing via layout by placing vias away from edges of the wiring and adjacent vias. The invention is also directed to a design structure on which a circuit resides.

Abstract: Methods, systems, program products are disclosed that control placement of dummy shapes about sensitive circuit elements such that the dummy shapes are at least substantially similar for each circuit element even though the dummy shapes are auto-generated. In one embodiment, the invention includes providing dummy shape pattern pitch information to a designer, and allowing placement of circuit elements at integer multiples of one or more of the pitches such that the dummy shapes are at least substantially similar about each instance of the circuit element. Another embodiment includes allowing placement of a marker about a circuit element to indicate an area in which dummy shapes are to be substantially identical, and then using the marker to place the circuit element. Dummy shapes generated within the marker ensure substantially identical dummy shapes for each instance of the circuit element. The invention also includes the integrated circuits formed.

Abstract: An interconnect structure, method of fabricating the interconnect structure and method of designing the interconnect structure for use in semiconductor devices. The interconnect structure includes a damascene metal wire having a pattern of dielectric filled holes.

Abstract: An interconnect structure, method of fabricating the interconnect structure and method of designing the interconnect structure for use in semiconductor devices. The interconnect structure includes a damascene metal wire having a pattern of dielectric filled holes.

Abstract: Increase power line noise immunity in an IC is provided by using decoupling capacitor structure in an area of the IC that is typically not used for routing, but filled with unconnected and non-functional metal squares (fills). In one embodiment, a method includes providing a circuit design layout; determining a density of a structure in an area of the circuit design layout; and in response to the density being less than a pre-determined density for the structure in the area, filling in a portion of the area with at least one capacitor structure until a combined density of the structure and the at least one capacitor structure in the area is about equal to the pre-determined density. Power line noise immunity is increased by increasing decoupling capacitance without enlarging the IC's total size by using a (fill) area that would normally be filled with unconnected and non-functional metal shapes.

Abstract: A method, system and program product for replacing isotropic hole shapes in a wiring layout with non-equiaxial hole shapes that are arranged in a direction of current flow, which increases current flow along the wire's longitudinal axis while decreasing current flow along the wire's transverse axis. One aspect of the invention includes a method including determining a direction of electrical current flow in a portion of a wiring layout; and placing at least one non-equiaxial hole shape within the portion of the wiring layout, wherein the non-equiaxial hole shape is arranged in the direction of electrical current flow. The invention accommodates the limitations of copper CMP within an automated tool without sacrificing the efficiency of a hand-tuned layout. The invention also includes a semiconductor device including at least one non-equiaxial hole shape.

Abstract: Aligning metal fill shapes with corresponding holes of a metal shield is provided. The holes of the metal shield are laid out corresponding to a pre-selected grid referenced to a pre-selected origin. The metal fill shapes of the metal fill pattern, are arranged in accordance with the same pre-selected grid and referenced to the same pre-selected origin. Accordingly, regardless of the size or spacing of the metal fill holes, a metal fill shape will substantially align with a corresponding metal fill hole. Such alignment between metallization levels and the structure of the metal shield and metal fill shape pattern enhance the electric noise blocking properties of the metal shield in conjunction with the metal fill shape.

Abstract: Methods, systems, program products are disclosed that control placement of dummy shapes about sensitive circuit elements such that the dummy shapes are at least substantially similar for each circuit element even though the dummy shapes are auto-generated. In one embodiment, the invention includes providing dummy shape pattern pitch information to a designer, and allowing placement of circuit elements at integer multiples of one or more of the pitches such that the dummy shapes are at least substantially similar about each instance of the circuit element. Another embodiment includes allowing placement of a marker about a circuit element to indicate an area in which dummy shapes are to be substantially identical, and then using the marker to place the circuit element. Dummy shapes generated within the marker ensure substantially identical dummy shapes for each instance of the circuit element. The invention also includes the integrated circuits formed.

Abstract: Semiconductor structure including a first rigid dielectric layer and a second rigid dielectric layer. A first non-rigid low-k dielectric layer is formed between the first and second rigid dielectric layer. A plurality of dummy fill shapes is formed in the first non-rigid layer which replace portions of the first non-rigid low-k dielectric layer with lower coefficient of thermal expansion (CTE) metal such that an overall CTE of the first non-rigid low-k dielectric layer and the plurality of dummy fill shapes matches a CTE of the first and second rigid dielectric layers more closely than that of the first non-rigid low-k dielectric layer alone.

Abstract: An interconnect structure, method of fabricating the interconnect structure and method of designing the interconnect structure for use in semiconductor devices. The interconnect structure includes a damascene metal wire having a pattern of dielectric filled holes.