Patents by Inventor Howard Nordby

Howard Nordby has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Conformally coated light emitting devices and methods for providing the same
    Patent number: 9166126
    Abstract: Methods are disclosed including applying a conformal coating to multiple light emitters. The conformal coating forms in gap areas between adjacent ones of the light emitters. The plurality of light emitters are separated into individual light emitters. The individual light emitters include the conformal coating that extends to a space corresponding to respective gap areas. Light emitting structures are disclosed including a semiconductor light emitting diode (LED) having an active region and a conformal coating including a first portion and a second portion, the first portion corresponding to at least one surface of the LED and the second portion extending from the first portion.
    Type: Grant
    Filed: January 31, 2011
    Date of Patent: October 20, 2015
    Assignee: Cree, Inc.
    Inventors: Matthew Donofrio, Howard Nordby, Peter S. Andrews
  • CONFORMALLY COATED LIGHT EMITTING DEVICES AND METHODS FOR PROVIDING THE SAME
    Publication number: 20120193648
    Abstract: Methods are disclosed including applying a conformal coating to multiple light emitters. The conformal coating forms in gap areas between adjacent ones of the light emitters. The plurality of light emitters are separated into individual light emitters. The individual light emitters include the conformal coating that extends to a space corresponding to respective gap areas. Light emitting structures are disclosed including a semiconductor light emitting diode (LED) having an active region and a conformal coating including a first portion and a second portion, the first portion corresponding to at least one surface of the LED and the second portion extending from the first portion.
    Type: Application
    Filed: January 31, 2011
    Publication date: August 2, 2012
    Inventors: Matthew Donofrio, Howard Nordby, Peter S. Andrews
  • METHODS OF FABRICATING GROUP III NITRIDE BASED LIGHT EMITTING DIODE STRUCTURES WITH A QUANTUM WELL AND SUPERLATTICE, GROUP III NITRIDE BASED QUANTUM WELL STRUCTURES AND GROUP III NITRIDE BASED SUPERLATTICE STRUCTURES
    Publication number: 20080038858
    Abstract: A light emitting diode is provided having a Group III nitride based superlattice and a Group III nitride based active region on the superlattice. The active region has at least one quantum well stricture. The quantum well structure includes a first Group III nitride based barrier layer, a Group III nitride based quantum well layer on the first barrier layer and a second Group III nitride based barrier layer. A Group III nitride based semiconductor device and methods of fabricating a Group III nitride based semiconductor device having an active region comprising at least one quantum well structure are provided. The quantum well structure includes a well support layer comprising a Group III nitride, a quantum well layer comprising a Group III nitride on the well support layer and a cap layer comprising a Group III nitride on the quantum well layer.
    Type: Application
    Filed: October 19, 2007
    Publication date: February 14, 2008
    Inventors: David Emerson, James Ibbetson, Michael Bergmann, Kathleen Doverspike, Michael O'Loughlin, Howard Nordby, Amber Abare
  • Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
    Publication number: 20050045895
    Abstract: A light emitting diode is provided having a Group III nitride based superlattice and a Group III nitride based active region on the superlattice. The active region has at least one quantum well structure. The quantum well structure includes a first Group III nitride based barrier layer, a Group III nitride based quantum well layer on the first barrier layer and a second Group III nitride based barrier layer. A Group III nitride based semiconductor device and methods of fabricating a Group III nitride based semiconductor device having an active region comprising at least one quantum well structure are provided. The quantum well structure includes a well support layer comprising a Group III nitride, a quantum well layer comprising a Group III nitride on the well support layer and a cap layer comprising a Group III nitride on the quantum well layer.
    Type: Application
    Filed: October 13, 2004
    Publication date: March 3, 2005
    Inventors: David Emerson, James Ibbetson, Michael Bergmann, Kathleen Doverspike, Michael O'Loughlin, Howard Nordby, Amber Abare