Abstract: The method described herein provides a method for preparing trisilylamine. In one aspect, the method comprises: providing a reaction mixture of trisilylamine and monochlorosilane into a reactor wherein the reaction mixture is at a temperature and pressure sufficient to provide trisilylamine in a liquid phase wherein the reaction mixture is substantially free of an added solvent; contacting the reaction mixture with ammonia to provide a crude mixture comprising trisilylamine and an ammonium chloride solid wherein monochlorosilane is in stoichiometric excess in relation to ammonia; purifiying the crude mixture to provide trisilylamine wherein the trisilyamine is produced at purity level of 90% or greater; and optionally removing the ammonium chloride solid from the reactor.

Abstract: The method described herein provides a method for preparing trisilylamine. In one aspect, the method comprises: providing a reaction mixture of trisilylamine and monochlorosilane into a reactor wherein the reaction mixture is at a temperature and pressure sufficient to provide trisilylamine in a liquid phase wherein the reaction mixture is substantially free of an added solvent; contacting the reaction mixture with ammonia to provide a crude mixture comprising trisilylamine and an ammonium chloride solid wherein monochlorosilane is in stoichiometric excess in relation to ammonia; purifiying the crude mixture to provide trisilylamine wherein the trisilyamine is produced at purity level of 90% or greater; and optionally removing the ammonium chloride solid from the reactor.

Abstract: The method described herein provides a method for preparing trisilylamine. In one aspect, the method comprises: providing a reaction mixture of trisilylamine and monochlorosilane into a reactor wherein the reaction mixture is at a temperature and pressure sufficient to provide trisilylamine in a liquid phase wherein the reaction mixture is substantially free of an added solvent; contacting the reaction mixture with ammonia to provide a crude mixture comprising trisilylamine and an ammonium chloride solid wherein monochlorosilane is in stoichiometric excess in relation to ammonia; purifiying the crude mixture to provide trisilylamine wherein the trisilyamine is produced at purity level of 90% or greater; and optionally removing the ammonium chloride solid from the reactor.

Abstract: An electrolytic cell and system used for making nitrogen trifluoride consisting of a computer and an electrolytic cell having a body, an electrolyte, at least one anode chamber that produces an anode product gas, at least one cathode chamber, and one or more fluorine adjustment means to maintain fluorine or hydrogen in the anode product gas within a target amount by adjusting the concentration of fluorine in said anode product gas, and the process that controls the system.

Abstract: The method described herein provides a method for preparing trisilylamine. In one aspect, the method comprises: providing a reaction mixture of trisilylamine and monochlorosilane into a reactor wherein the reaction mixture is at a temperature and pressure sufficient to provide trisilylamine in a liquid phase wherein the reaction mixture is substantially free of an added solvent; contacting the reaction mixture with ammonia to provide a crude mixture comprising trisilylamine and an ammonium chloride solid wherein monochlorosilane is in stoichiometric excess in relation to ammonia; purifiying the crude mixture to provide trisilylamine wherein the trisilyamine is produced at purity level of 90% or greater; and optionally removing the ammonium chloride solid from the reactor.

Abstract: Aminosilanes, such as diisopropylaminosilane (DIPAS), are precursors for the deposition of silicon containing films such as silicon-oxide and silicon-nitride films. Described herein are methods to make these aminosilanes as well as intermediate compounds such as haloaminosilane compounds having the following formula: X4-nHn-1SiN(CH(CH3)2)2 wherein n is a number selected from 1, 2 and 3; and X is a halogen selected from Cl, Br, or a mixture of Cl and Br provided that when X is Cl, n is not 1.

Abstract: An electrolytic cell and system used for making nitrogen trifluoride consisting of a computer and an electrolytic cell having a body, an electrolyte, at least one anode chamber that produces an anode product gas, at least one cathode chamber, and one or more fluorine adjustment means to maintain fluorine or hydrogen in the anode product gas within a target amount by adjusting the concentration of fluorine in said anode product gas, and the process that controls the system.

Abstract: A process and system for the synthesis and/or purification of crude germane to provide a purified germane product are disclosed herein. In one aspect of the present invention, there is provided a process for making a purified germane product containing less than 1 volume percent of one or more germanium-containing impurities comprising: providing a crude germane fluid; passing at least a portion of the crude germane fluid through a first adsorbent which selectively adsorbs water and carbon dioxide contained therein and withdrawing therefrom a partially purified germane fluid; passing at least a portion of the partially purified germane fluid through a second adsorbent which selectively adsorbs the one or more germanium-containing impurities contained therein and withdrawing therefrom a hydrogen-enriched purified germane fluid; and separating the purified germane product hydrogen from the hydrogen-enriched purified germane fluid.

Abstract: This invention describes an improvement in a process for purifying a nitrogen trifluoride (NF3) stream containing unreacted F2, HF, and nitrogen oxides from an NF3 reactor wherein the F2, and HF are removed and then the nitrogen oxides removed by adsorption. The improvement in the process resides in selectively removing the F2 from said NF3 stream without generating oxygen difluoride, removing HF and then removing said nitrogen oxides by adsorption. Further purification can be effected as desired.

Abstract: A process for reducing or eliminating NH3/HF/MFz liquid waste melt in the manufacture of NF3 is provided which includes the steps of providing an NF3 reactor for a reaction of F2 with a liquid NH3/HF/MFz mixture that produces NF3, HF, N2 and other nitrogen fluorides as gaseous products and a liquid NH3/HF/MFz mixture as the liquid waste melt. The process further provides for reduction or elimination of the liquid NH3/HF/MFz waste melt produced by the reactor.

Abstract: An on-line halogen analyzer system and method of use for semiconductor processing effluent monitoring. The system includes sampling the effluent stream into an absorption cell, and passing UV-Visible light through the effluent sample in the cell. After passing through the sample the light is collected by a photo detector for real-time wavelength-selective absorption analysis. The system provides simultaneous determination of the concentrations of multiple halogen gases (e.g. F2, Cl2, Br2, and I2) in semiconductor processing effluent streams. The invention can be used for chemical vapor deposition (CVD) chamber cleaning endpoint determination and to improve fluorine utilization efficiency in remote plasma downstream CVD chamber cleaning processes.

Abstract: A method of forming a low dielectric constant interlayer dielectric film on a substrate by reacting, under chemical vapor deposition conditions sufficient to deposit the film on the substrate, an organosilicon precursor comprising a silyl ether, a silyl ether oligomer, or an organosilicon compound containing one or more reactive groups, to form an interlayer dielectric film having a dielectric constant of 3.5 or less. The films formed by the above method.

Abstract: Fluorine is removed from exhaust gas coming from a cleaning, etching or CVD operation in semiconductor fabrication by passing the gas through a fixed bed of activated alumina having a high total pore volume while maintaining the fluorine level of the gas passing into the alumina bed at 4 volume percent or less. Nitrogen can be added to the exhaust gas to control fluorine concentration. Using alumina having an initial total pore volume above 0.35 cc/gm and limiting the fluorine level in the exhaust gas enables the fixed bed to operate without undue plugging or sintering.

Abstract: A process for destroying fluorine in a gas containing such fluorine by contacting the gas with a fluidized bed of metal particles capable of reacting with such fluorine wherein the metal particles have a particle size essentially no greater than approximately 300 microns. The process can be conducted in parallel connected switching fluidized beds wherein the beds are switched based upon achieving a predetermined bed height expansion based upon the reaction of the metal particles with such fluorine.

Abstract: A process for destroying NF.sub.3 in a gas containing NF.sub.3 by contacting the gas with a fluidized bed of metal particles capable of reacting with NF.sub.3 wherein the metal particles have a particle size essentially no greater than approximately 300 microns. The process can be conducted in parallel connected switching fluidized beds wherein the beds are switched based upon achieving a predetermined bed height expansion based upon the reaction of the metal particles with the NF.sub.3.

Abstract: A process for abating NF.sub.3 by contacting it with a metal oxalate or carbonate.