Abstract: A weighting processor and a method for ranking search results obtained by searching a body of data records. The ranking is carried out in relation to at least one selected search term contained in a taxonomy in which search terms have associated metadata which, for each search term, identifies a category and includes any measure of relatedness to at least one different search term in the same category, the measure being based on co-occurrences of the search terms in individual ones of a plurality of data records. The search results identify data records containing one or more search terms from the taxonomy and the results are ranked by summing, for each data record of the results, the measures of relatedness of search terms present in the data record to the selected search term(s).

Abstract: A taxonomy is built by associating metadata with search terms. A body of data records is analyzed to identify pairs of search terms co-occurring in individual data records and to obtain an observed measure of the frequency of such co-occurrences between identified pairs. A taxonomy is then built by constructing metadata and associating the search terms with respective metadata, the metadata for each co-occurring search term identifying at least one other search term with which it co-occurs, together with a measure of relatedness based on the observed co-occurrence frequency measure between the co-occurring pair.

Abstract: Data records are searched by use of a taxonomy comprising search terms having associated respective metadata wherein, for each search term, the associated metadata includes a measure of relatedness based on co-occurrences of search terms in at least one data record of a body of data records. A set of one or more search terms is selected and the taxonomy is referred to so as to extend the set of one or more selected search terms by including any different search terms having a significant measure of relatedness in relation to the one or more selected search terms.

Abstract: A set of search results obtained by searching a body of data records is ranked, the set of search results identifying respective data records containing one or more search terms in a first category. At least one search term of a taxonomy is selected, the taxonomy including search terms having associated metadata which, for at least some search terms, identifies a second category and includes any positive measure of relatedness to at least one different search term in the second category, the measure of relatedness being based on co-occurrences of the search terms in individual ones of a plurality of data records. The search results are then ranked, at least partially, according to the measure of relatedness to the selected search term(s) of one or more search terms in the second category which are contained in the respective data records of the search results.

Abstract: A double diffused region (65), (75), (85) is formed in a semiconductor substrate or in an epitaxial layer (20) formed on the semiconductor substrate. The double diffused region is formed by first implanting light implant specie such as boron through an opening in a photoresist layer prior to a hard bake process. Subsequent to the hard bake process, a heavy implant species such as arsenic is implanted into the epitaxial layer. During subsequent processing, such as during LOCOS formation, a double diffused region is formed by a thermal anneal. A dielectric layer (120) is formed on the epitaxial layer (20) and gate structures (130), (135) are formed over the dielectric layer (120).

Abstract: A double diffused region (65), (75), (85) is formed in an epitaxial layer (20). The double diffused region is formed by first implanting light implant specie such as boron through an opening in a photoresist layer prior to a hard bake process. Subsequent to a hard bake process heavy implant specie such as arsenic can be implanted into the epitaxial layer. During subsequent processing such as LOCOS formation the double diffused region is formed. A dielectric layer (120) is formed on the epitaxial layer (20) and gate structures (130), (135) are formed over the dielectric layer (120).

Abstract: An apparatus and method for controlling the phase of a tunable laser is provided. Stabilization of the mode of a laser beam is provided as the laser is tuned to a target frequency. For one embodiment, a laser generates a reference beam and an output beam. The power of each of beam is measured by optical detectors, and a ratio thereof is utilized to detect when a mode hop occurs as the laser is coarsely tuned. The average of the pre and post mode hop ratios is utilized as a control setpoint while finely tuning the laser to the target frequency. Wavelength lockers, optical power dividers and optical detectors are utilized to determine power levels of the reference and output beams while also monitoring frequency characteristics thereof. A control unit utilizes the outputs from the wavelength locker to control the operation of the extended cavity laser during and after tuning.

Abstract: An apparatus and method for controlling the phase of a tunable laser is provided. Stabilization of the mode of a laser beam is provided as the laser is tuned to a target frequency. For one embodiment, a laser generates a reference beam and an output beam. The power of each of beam is measured by optical detectors, and a ratio thereof is utilized to detect when a mode hop occurs as the laser is coarsely tuned. The average of the pre and post mode hop ratios is utilized as a control setpoint while finely tuning the laser to the target frequency. Wavelength lockers, optical power dividers and optical detectors are utilized to determine power levels of the reference and output beams while also monitoring frequency characteristics thereof. A control unit utilizes the outputs from the wavelength locker to control the operation of the extended cavity laser during and after tuning.

Abstract: A double diffused region (65), (75), (85) is formed in an epitaxial layer (20). The double diffused region is formed by first implanting light implant specie such as boron through an opening in a photoresist layer prior to a hard bake process. Subsequent to a hard bake process heavy implant specie such as arsenic can be implanted into the epitaxial layer. During subsequent processing such as LOCOS formation the double diffused region is formed. A dielectric layer (120) is formed on the epitaxial layer (20) and gate structures (130), (135) are formed over the dielectric layer (120).

Abstract: An apparatus and method for controlling the phase of a tunable laser is provided. Stabilization of the mode of a laser beam is provided as the laser is tuned to a target frequency. For one embodiment, a laser generates a reference beam and an output beam. The power of each of beam is measured by optical detectors, and a ratio thereof is utilized to detect when a mode hop occurs as the laser is coarsely tuned. The average of the pre and post mode hop ratios is utilized as a control setpoint while finely tuning the laser to the target frequency. Wavelength lockers, optical power dividers and optical detectors are utilized to determine power levels of the reference and output beams while also monitoring frequency characteristics thereof. A control unit utilizes the outputs from the wavelength locker to control the operation of the extended cavity laser during and after tuning.

Abstract: A system and method for efficient coupling between optical elements comprises a memory containing an alignment module configured to align a light beam with an optical element to maximize coupling efficiency, and a processor coupled to the memory to control the alignment module. A position sensitive device indirectly senses a position of the light beam on the optical element and sends the position to the processor. The alignment module directly measures coupling efficiency where the light beam contacts the optical element. The alignment module identifies a direction of increasing coupling efficiency and aligns the light beam with the optical element along that direction until maximum coupling efficiency is achieved.

Abstract: A method for producing a buried heterostructure active devices and a passive waveguide by providing a heterostructure substrate such as a superlattice having at least one planar GaAs layer and at least one AlGaAs layer adjacent to it. A single crystal germanium layer is epitaxially deposited on the superlattice substrate. A layer of gold is deposited on the germanium layer. The gold and germanium layers are imagewise patterned and selected portions etched away. The patterned substrate is encapsulated in a compatible, heat resistant encapsulating material. The encapsulated substrate is then annealed at a temperature of up to about 350.degree. C.